Page 1
p
AOD410
T
Top
T
N-Channel Enhancement Mode Field Effect Transistor
June 2003
General Description
The AOD410 uses advanced trench technology to
provide excellent R
device is suitable for use as a load switch or in PWM
applications.
O-252
D-PAK
G D S
Absolute Maximum Ratings T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
F
Pulsed Drain Current
Power Dissipation
A
Junction and Storage Temperature Range
and low gate charge. This
DS(ON)
View
Drain Connected to
ab
=25°C unless otherwise noted
A
=25°C
T
A
=70°C
T
A
B
TA=25°C
=70°C
T
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
Features
VDS (V) = 30V
I
D
R
R
G
= 8A
< 65mΩ (VGS = 10V)
DS(ON)
< 100mΩ (VGS = 4.5V)
DS(ON)
D
S
Maximum UnitsParameter
30
8
6
20
4.2
2.6
-55 to 175
V
V±20
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
24 30
45 60
812
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
Page 2
AOD410
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=250µA, VGS=0V
D
VDS=24V, VGS=0V
VDS=0V, VGS= ±20V
Gate Threshold Voltage VDS=V
On state drain current
VGS=4.5V, VDS=5V
VGS=10V, ID=8A
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=8A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=250µA
TJ=55°C
TJ=125°C
30 V
1
5
µA
100 nA
1 1.8 3 V
15 A
48 65
76 100
75 100
mΩ
m
6.2 S
0.75 1 V
4.3 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
288 pF
57 pF
39 pF
3 Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
=10V, VDS=15V, ID=8A
GS
VGS=10V, VDS=15V, RL=1.8Ω,
R
=3Ω
GEN
IF=8A, dI/dt=100A/µs
=8A, dI/dt=100A/µs
I
F
6.72 nC
3.34 nC
0.76 nC
1.78 nC
3.7 ns
3.7 ns
15.6 ns
2.6 ns
12.6
ns
5.1 nC
A: The value of R
in any a given application depends on the user's specific board design. The power dissipation is provided based on the maximum value of R
t<10s.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
F. The maximum current rating is either limited by bond-wires, or set by steady-state R
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
θJA
is the sum of the thermal impedence from junction to case R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and case to ambient.
θJC
θJC
.
θJA
for
Alpha & Omega Semiconductor, Ltd.
Page 3
AOD410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10V
8V
6V
15
10
(A)
D
I
5V
4.5V
4V
3.5V
5
VGS=3V
0
012345
VDS (Volts)
Fig 1: On-Region Characteristics
100
)
Ω
(m
DS(ON)
R
90
80
70
60
VGS=4.5V
VGS=10V
50
40
0246810
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
10
8
VDS=5V
6
(A)
D
I
4
125°C
2
25°C
0
1.5 2 2.5 3 3.5 4 4.5
V
(Volts)
GS
Figure 2: Transfer Characteristics
2
1.8
ID=8A
VGS=4.5V
1.6
1.4
VGS=10V
1.2
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
175
150
)
Ω
(m
DS(ON)
R
125
100
75
ID=8A
25°C
50
25
246810
(Volts)
V
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
125°C
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
(Volts)
SD
Figure 6: Body-Diode Characteristics
Page 4
AOD410
0.1s
0s
o
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
VDS=15V
ID=8A
6
(Volts)
GS
4
V
2
0
012345678
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
100µs
10.0
R
DS(ON)
limited
(Amps)
D
I
1.0
T
J(Max)
=150°C
TA=25°C
1ms
10ms
1s
1
10µs
DC
0.1
0.1 1 10 100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
500
400
C
iss
300
200
Capacitance (pF)
100
C
oss
C
rss
0
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
50
T
=150°C
J(Max)
40
TA=25°C
30
20
Power (W)
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=30°C/W
θJA
1
0.1
Normalized Transient
Thermal Resistance
θJA
Z
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
P
Pulse Width (s)
D
T
n
T
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