Datasheets aod409 Datasheet

AOD409, AOD409L (Green Product)

T

T

T

P-Channel Enhancement Mode Field Effect Transistor

Rev 2: Aug 2004

General Description

The AOD409 uses advanced trench technology to
provide excellent R

gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. AOD409L (Green

, low gate charge and low

DS(ON)

Features

VDS (V) = -60V
I

= -29A

D

R
R

< 40mΩ (VGS = -10V) @ -20A

DS(ON)

< 55mΩ (VGS = -4.5V)

DS(ON)

Product) is offered in a lead-free package.

O-252

D-PAK

op View

Drain Connected to

ab

G D S

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

G

Symbol

Drain-Source Voltage -60

Gate-Source Voltage

T

Continuous Drain
Current

G

Pulsed Drain Current

Avalanche Current

=25°C

C

=100°C

T

C

C

C

Repetitive avalanche energy L=0.1mH

TC=25°C

Power Dissipation

B

T

=100°C

C

TA=25°C

Power Dissipation

A

=70°C 1.6

T

A

Junction and Storage Temperature Range -55 to 175

V

DS

V

GS

I

D

I

DM

I

C

AR

E

AR

P

D

P

DSM

TJ, T

STG

D

S

Maximum UnitsParameter

-29

-20

-60

-29

134

60

30

2.5

V

V±20

A

A

mJ

W

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

C

A

A

t ≤ 10s
Steady-State

Steady-State

Symbol Typ Max

R

θJA

R

θJL

16.7 25
40 50

1.9 2.5

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AOD409, AOD409L

Ω

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage V
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

I

=-250µA, VGS=0V

D

=-48V, VGS=0V

V

DS

V

=0V, VGS=±20V

DS
DS=VGS ID

V

GS

V

GS

V

GS

V

DS

I

=-1A,VGS=0V

S

=-250µA
=-10V, VDS=-5V
=-10V, ID=-20A

=-4.5V, ID=-20A
=-5V, ID=-20A

T

J

=125°C

T

J

=55°C

-60 V

-0.003 -1

-5

µA

±100 nA

-1.2 -1.9 -2.4 V

-60 A
32 40
53
43 55

mΩ
m

32 S

-0.73 -1 V

-30 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V

V

=0V, VDS=-30V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

2977 3573 pF

241 pF
153 pF

2 2.4 Ω

SWITCHING PARAMETERS

(10V)

Q

g

Q

(4.5V)

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any a given application
depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.

Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

=-10V, VDS=-30V, ID=-20A

V

GS

=-10V, VDS=-30V, RL=1.5Ω,

V

GS

R

=3Ω

GEN

IF=-20A, dI/dt=100A/µs
I

=-20A, dI/dt=100A/µs

F

44 54 nC

22.2 28 nC
9nC

10 nC
12 ns

14.5 ns

38 ns
15 ns
40

50 ns

59 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD409, AOD409L

S

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

30

-10V

25

20

(A)

15

D

-I

-4.5V

-4V

-6V

-5V

-3.5V

10

5

VGS=-3V

0

012345

-V

(Volts)

DS

Fig 1: On-Region Characteristics

50

40

)

Ω

(m

DS(ON)

R

30

20

VGS=-4.5V

VGS=-10V

10

0

0 5 10 15 20 25

(A)

-I

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

30

VDS=-5V

25

20

(A)

15

D

-I

125°C

10

25°C

5

0

012345

-V

(Volts)

GS

Figure 2: Transfer Characteristics

2

VGS=-10V

1.8

=-20A

I

D

1.6
VGS=-4.5V

=-20A

1.4

I

D

1.2

1

Normalized On-Resistance

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

80

125°C

60

)

Ω

(m

DS(ON)

R

40

25°C

20

246810

-V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

ID=-20A

1.0E+01

1.0E+00

1.0E-01

1.0E-02

(A)

S

-I

1.0E-03

125°C

25°C

1.0E-04

1.0E-05

1.0E-06

0.0 0.2 0.4 0.6 0.8 1.0 1.2

(Volts)

-V

SD

Figure 6: Body-Diode Characteristics

AOD409, AOD409L

S

s

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

10

8

VDS=-30V
I

=-20A

D

6

(Volts)

GS

4

-V

2

0

0 5 10 15 20 25 30 35 40 45 50

-Q

(nC)

g

Figure 7: Gate-Charge Characteristics

100.0

100µs

1ms

DC

(Amps)

-I

D

10.0

1.0

R

DS(ON)

limited

T

J(Max)

10ms

=175°C, TA=25°C

10µs

4000
3600

C

3200

iss

2800
2400
2000
1600

Capacitance (pF)

1200

800

C

oss

C

rs

400

0

0 5 10 15 20 25 30

-V

(Volts)

DS

Figure 8: Capacitance Characteristics

1000

800

T
T

J(Max)
A

=175°C

=25°C

600

400

Power (W)

200

0.1

0.1 1 10 100

(Volts)

-V

DS

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

D=Ton/T
T

J,PK=TC+PDM.ZθJC.RθJC

R

=2.5°C/W

θJC

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

0.0001 0.001 0.01 0.1 1 10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Case (Note F)

1

0.1

Normalized Transient

Thermal Resistance

JC

θ

Z

Single Pulse

P

T

on

T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

AOD409, AOD409L

S

⋅

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC

30

IL

D

VBV

−

DD

25

=

t

A

20

15

(A), Peak Avalanche Curren t

D

-I

TA=25°C

10

0.00001 0.0001 0.001

Time in avalanche, t

(s)

A

Figure 12: Single Pulse Avalanche capability

24

20

(A)

D

16

12

8

Current rating -I

4

70
60
50
40
30
20

Power Dissipation (W)

10

0

0 25 50 75 100 125 150 175

(°C)

T

CASE

Figure 13: Power De-rating (Note B)

60

50

TA=25°C

40

30

Power (W)

20

10

0

0 25 50 75 100 125 150 175

(°C)

T

CASE

Figure 14: Current De-rating (Note B)

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note H)

10

D=Ton/T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=50°C/W

1

θJA

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0.1

Normalized Transient

Thermal Resistance

0.01

JA

θ

Z

Single Pulse

P

T

on

T

0.001

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)

Alpha & Omega Semiconductor, Ltd.

UNIT: mm

RECOMMENDED LAND PATTERN

1

2

3

0.050-----0.035L2 0.889 1.270-----

0.040-----0.025L1 0.635 1.016-----

0.080-----0.050L 1.270 2.032-----

e1

4.572 BSC.

0.180 BSC.

0.410-----0.385H 9.779 10.414-----

E

e 2.286 BSC.

6.477 6.7316.604

-----

----- -----

0.090 BSC.

-----0.170E1 4.318

0.2650.2600.255

5.334

-----0.170D1 4.318 -----

0.210

D

5.969 6.2236.096

0.2450.2400.235

0.023-----0.019c1 0.483 0.584-----

0.0220.0200.018c 0.457 0.5590.508

b2 5.207 0.2054.45 5.461

-----

0.215

0.045-----0.035b1 0.889 1.143-----

0.0350.0300.027b 0.686 0.8890.762

0.045-----0.035A2 0.889 1.143-----

0.004-----0.000A1 0.000 0.102-----

A

M

BOL

S

Y

2.235

MIN.

DIMENSION IN MILLIMETERS

NOM.

2.286

2.388

MAX.

0.088

MIN. NOM.

DIMENSIONS IN INCHES

0.090 0.094

MAX.

5. FOLLOWED FROM JEDEC TO-252 (AA)

2. DIMENSION L IS MEASURED IN GAGE PLANE

4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED

INCH DIMENSIONS ARE NOT NECESSARILY EXACT.

GATE BURRS

NOTE

1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND

3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED

ALPHA & OMEGA

SEMICONDUCTOR, LTD.

DPAK PACKAGE MARKING DESCRIPTION

Document No.

Version

Title

PD-00243

rev B

AOD409 Marking Description

D 4 0 9

Standard product

NOTE:
LOGO - AOS LOGO
D409 - PART NUMBER CODE.
F&A - FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE

PART NO. DESCRIPTION
AOD409
AOD409L

Standard product

Green product

CODE

D409

D409

D 4 0 9

Green product

Rev. A

ALPHA & OMEGA

TO-252 (DPAK)

SEMICONDUCTOR, LTD.

TO-252 (DPAK) Carrier Tape

TO-252 (DPAK) Reel

Tape and Reel Data

TO-252 (DPAK)

Leader / Trailer

& Orientation