Page 1
AOD405
T
T
T
P-Channel Enhancement Mode Field Effect Transistor
Jan 2004
General Description
The AOD405 uses advanced trench technology to
provide excellent R
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
O-252
D-PAK
G D S
, low gate chargeand low
DS(ON)
op View
Drain Connected to
ab
Features
VDS (V) = -30V
I
= -18A
D
R
R
< 32mΩ (VGS = 20V)
DS(ON)
< 60mΩ (VGS = 10V)
DS(ON)
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Drain-Source Voltage -30
Gate-Source Voltage
Continuous Drain
Current
B,G
T
A
TA=100°C
=25°C
G
B
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy L=0.1mH
TC=25°C
Power Dissipation
B
T
=100°C
C
TA=25°C
Power Dissipation
A
=70°C 1.6
T
A
Junction and Storage Temperature Range -55 to 175
V
DS
V
GS
I
D
I
DM
I
C
AR
E
AR
P
D
P
DSM
TJ, T
STG
Maximum UnitsParameter
-18
-18
-40
-18
16
60
30
2.5
V
V±20
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
16.7 25
40 50
1.9 2.5
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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AOD405
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=-250µA, VGS=0V
D
VDS=-24V, VGS=0V
VDS=0V, VGS=±20V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-10V, VDS=-5V
VGS=-10V, ID=-18A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-10A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-18A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C
TJ=125°C
-30 V
-1
-5
µA
±100 nA
-1.2 -2 -2.4 V
-
40 A
24.5 32
36 43
41 60
mΩ
m
17 S
-0.76 -1 V
-18 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
920 1100 pF
190 pF
122 pF
3.6 4.5 Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=-10V, VDS=-15V, ID=-18A
VGS=-10V, VDS=-15V, RL=0.82Ω,
R
=3Ω
GEN
IF=-18A, dI/dt=100A/µs
IF=-18A, dI/dt=100A/µs
18.7 23 nC
9.7 nC
2.54 nC
5.4 nC
7.8 ns
8.7 ns
17.7 ns
8.5 ns
21.4
26 ns
13 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
Page 3
AOD405
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
-10V
25
-6V
-5V
20
15
(A)
D
-I
10
-4.5V
-4V
-3.5V
5
VGS=-3V
0
012345
(Volts)
-V
DS
Fig 1: On-Region Characteristics
70
65
)
Ω
(m
DS(ON)
R
60
55
50
45
40
35
30
VGS=-4.5V
25
20
VGS=-10V
15
10
0 5 10 15 20 25
-I
(A)
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
VDS=-5V
20
(A)
15
D
-I
10
5
125°C
25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V
(Volts)
GS
Figure 2: Transfer Characteristics
1.60
VGS=-4.5V
1.40
1.20
ID=-10A
VGS=-10V
ID=-18A
1.00
Normalized On-Resistance
0.80
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
90
80
70
)
60
Ω
(m
50
40
DS(ON)
R
30
25°C
20
10
0
345678910
-V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
ID=-18A
125°C
1.0E+01
1.0E+00
1.0E-01
1.0E-02
(A)
S
-I
1.0E-03
1.0E-04
1.0E-05
1.0E-06
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0
-V
(Volts)
SD
Figure 6: Body-Diode Characteristics
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AOD405
0sDC
J(Max)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.00E+01
8.00E+00
6.00E+00
(Volts)
GS
4.00E+00
-V
2.00E+00
0.00E+00
100.0
10.0
(Amps)
D
-I
1.0
VDS=-15V
ID=-18A
0 4 8 12 16 20
-Q
(nC)
g
Figure 7: Gate-Charge Characteristics
T
=150°C, TA=25°C
R
DS(ON)
limited
1ms
10µs
100µs
10ms
0.1s
1s
1
1500
1250
C
iss
1000
750
500
Capacitance (pF)
C
oss
C
rss
250
0
0 5 10 15 20 25 30
-V
(Volts)
DS
Figure 8: Capacitance Characteristics
40
T
J(Max)
TA=25°C
30
20
Power (W)
10
=150°C
0.1
0.1 1 10 100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=40°C/W
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Normalized Transient
Thermal Resistance
θJA
Z
Single Pulse
P
T
on
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Page 5
ALPHA & OMEGA
SEMICONDUCTOR, INC.
Document No.
Version
Title
PD-00115
rev A
AOD405 Package Data Sheet
21 3
GAUGE PLANE
DETAIL 'D'
SCALE: 1.5X
SEATING PLANE
SEE
DETAIL 'D'
DIMENSION IN MILLIMETERS
MIN.
2.235
A
0.000
A1
0.889
A2
0.686
b
0.889
b1
5.207
b2
0.483
c1
5.969
D
4.318
D1
6.477
E
4.318
E1
e
e1
9.779
H
1.270
L
0.635
L1
0.889
L2
NOTE
1. PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND
GATE BURRS
2. DIMENSION L IS MEASURED IN GAGE PLANE
3. TOLERANCE 0.10 mm UNLESS OTHERWISE SPECIFIED
4. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED
INCH DIMENSIONS ARE NOT NECESSARILY EXACT.
5. FOLLOWED FROM JEDEC TO-252 (AA)
NOM.
2.286
----- 0.102
----- 1.143
0.762 0.889
----- 1.143
0.508 0.5590.457c
----- 0.584
6.096 6.223
-----
6.604 6.731
-----
2.286 BSC.
4.572 BSC.
----- 10.414
----- 2.032
----- 1.016
----- 1.270
MAX.
2.388
5.4614.45
5.334
-----
DIMENSIONS IN INCHES
0.088
0.000 -----
0.035 -----
0.027 0.030
0.035 -----
0.018 0.020 0.022
0.019 -----
0.235 0.240
0.170 -----
0.255 0.260
0.170 -----
0.385 -----
0.050 -----
0.025 -----
0.035 -----
NOM.MIN.
0.090
-----0.205
0.090 BSC.
0.180 BSC.
MAX.
0.094
0.004
0.045
0.035
0.045
0.215
0.023
0.245
0.210
0.265
-----
0.410
0.080
0.040
0.050
PACKAGE MARKING DESCRIPTION
NOTE:
D 4 0 5
F A Y W L T
21 3
DPAK PART NO. CODE
- AOS LOGO
D405 - PART NUMBER CODE.
F&A -FOUNDRY AND ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L T - ASSEMBLY LOT CODE
PART NO. CODE
AOD405
D405
RECOMMENDED LAND PATTERN
UNIT: mm
Page 6
ALPHA & OMEGA
TO-252 (DPAK)
SEMICONDUCTOR, INC.
TO-252 (DPAK) Carrier Tape
TO-252 (DPAK) Reel
Tape and Reel Data
TO-252 (DPAK)
Leader / Trailer
& Orientation
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