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AO6402
N-Channel Enhancement Mode Field Effect Transistor
Nov 2002
General Description
The AO6402 uses advanced trench technology to
provide excellent R
device may be used as a load switch or in PWM
applications.
TSOP-6
Top View
D
D
G
Absolute Maximum Ratings T
Parameter Maximum Units
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range -55 to 150 °C
and low gate charge. This
DS(ON)
6
1
2
3
D
5
D
4
S
=25°C unless otherwise noted
A
Symbol
V
DS
V
GS
TA=25°C
T
=70°C 5.8
A
B
T
=25°C
A
T
=70°C 1.44
A
I
D
I
DM
P
D
TJ, T
STG
Features
VDS (V) = 30V
= 6.9A
I
D
R
DS(ON)
R
DS(ON)
D
G
S
< 28mΩ (VGS = 10V)
< 42mΩ (VGS = 4.5V)
6.9
30
2
A
W
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
48 62.5
74 110
35 40
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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AO6402
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
Gate-Body leakage current VDS=0V, VGS=±20V
Gate Threshold Voltage VDS=V
GS ID
=250µA
On state drain current VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
Static Drain-Source On-Resistance
VGS=4.5V, ID=5.0A
Forward Transconductance VDS=5V, ID=6.9A
Diode Forward Voltage IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
30 V
1
5
µA
100 nA
1 1.9 3 V
20 A
22.5 28
31.3 38
34.5 42
mΩ
m
10 15.4 S
0.76 1 V
3A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
680 pF
102 pF
77 pF
3 Ω
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VGS=10V, VDS=15V, ID=6.9A
=10V, VDS=15V, RL=2.2Ω,
V
GS
R
=3Ω
GEN
=6.9A, dI/dt=100A/µs
I
F
IF=6.9A, dI/dt=100A/µs
13.84 nC
6.74 nC
1.82 nC
3.2 nC
4.6 ns
4.1 ns
20.6 ns
5.2 ns
16.5
ns
7.8 nC
A: The value of R
in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
θJA
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
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AO6402
V
GS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
25
4.5V
6V
5V
4V
20
15
(A)
D
I
3.5V
10
5
VGS=3V
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
60
50
)
Ω
40
=4.5V
(m
30
DS(ON)
R
20
VGS=10V
10
0 5 10 15 20
I
(Amps)
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
16
VDS=5V
12
(A)
D
I
8
125°C
4
25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
(Volts)
GS
Figure 2: Transfer Characteristics
1.6
1.5
ID=5A
VGS=10V
1.4
1.3
VGS=4.5V
1.2
1.1
1
Normalized On-Resistance
0.9
0.8
0 50 100 150 200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
70
)
Ω
(m
DS(ON)
R
60
50
40
30
20
ID=5A
125°C
25°C
10
246810
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
Amps
S
I
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0
V
(Volts)
SD
Figure 6: Body diode characteristics
Alpha & Omega Semiconductor, Ltd.
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AO6402
S
oss
s
0.1sDC
A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
10
8
VDS=15V
=6.9A
I
D
6
(Volts)
GS
4
V
2
0
0 2 4 6 8 10 12 14
Q
(nC)
g
Figure 7: Gate-Charge characteristics
100
R
DS(ON)
T
T
limited
100µs
10
1m
10ms
(Amps)
D
I
1
J(Max)
=25°C
=150°C
10µs
1000
900
800
f=1MHz
V
GS
700
600
C
iss
500
400
300
Capacitance (pF)
200
100
C
rss
0
C
0 5 10 15 20 25 30
V
(Volts)
DS
Figure 8: Capacitance Characteristics
40
T
T
30
20
Power W
10
=0V
J(Max)
=25°C
=150°C
0.1
0.1 1 10 100
V
(Volts)
DS
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/(Ton+T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=62.5°C/W
θJA
)
off
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Normalized Transient
Thermal Resistance
θJA
Z
Single Pulse
P
T
T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Package Data
θ
GAUGE PLANE
SEATING PLANE
SYMBOLS
A
A1
A2
DIMENSIONS IN MILLIMETERS
MIN
1.00
0.00
1.00
−−−
1.10
MAXNOM
1.25−−−
0.10
1.15
0.500.40b 0.35
c
D
E
E1 1.60
e
0.10
2.70
2.60
0.13
2.90
2.80
0.95 BSC
0.20
3.10
3.00
2.001.80
e1 1.90 BSC
L
0.37
−−−
−−−
5° 8°θ1 1°
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ±0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
PACKAGE MARKING DESCRIPTION
P N D L N
NOTE:
P N - PART NUMBER CODE.
D - YAER AND WEEK CODE.
L N - ASSEMBLY LOT CODE, FAB AND
ASSEMBLY LOCATION CODE.
TSOP-6 PART NO. CODE
CODEPART NO.
AO6402
D2
RECOMMENDED LAND PATTERN
Page 6
ALPHA & OMEGA
SEMICONDUCTOR, INC.
TSOP-6 Carrier Tape
TSOP-6 Reel
TSOP-6 Tape and Reel Data
TSOP-6 Tape
Leader / Trailer
& Orientation
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