Datasheets ao4607 Datasheet

AO4607

n

l

Complementary Enhancement Mode Field Effect Transistor

Feb 2003

General Description

Features

n-channel p-channel
The AO4607 uses advanced trench
technology MOSFETs to provide excelle
R

and low gate charge. The

DS(ON)

complementary MOSFETs may be used
in inverter and other applications. A
Schottky diode is co-packaged with the n­channel FET to minimize body diode

VDS (V) = 30V -30V

ID = 6.9A -6A

R

DS(ON) RDS(ON)

< 28mΩ (VGS=10V) < 35mΩ (VGS = 10V)

< 42mΩ (VGS=4.5V) < 58mΩ (VGS = 4.5V)

<0.5V@1A

V

F

losses.

D2

S2/A

G2
S1
G1

1
2
3
4

SOIC-8

8

D2/K

7

D2/K

6

D1

5

D1

G2

n-channel p-channe

K

A

S2

Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Max n-channel

Drain-Source Voltage

Continuous Drain

Current

A

Pulsed Drain Current

TA=25°C

TA=70°C

B

=25°C

T

A

T

=70°CPower Dissipation

A

Junction and Storage Temperature Range

Symbol Max p-channel Units

V

DS

V

GS

30 -30

±20Gate-Source Voltage

6.9

I

D

I

DM

P

D

TJ, T

STG

5.8

30

2

1.28

G1

D1

S1

-55 to 150-55 to 150

±20

-6

-5

-30

2

1.28

V

V

A

W

°C

Parameter Maximum Schottky Units

Reverse Voltage 30 V
Continuous Forward

Current

A

Pulsed Forward Current

TA=25°C

T

=70°C 2

A
B

TA=25°C

Power Dissipation

A

TA=70°C 1.28

Junction and Storage Temperature Range -55 to 150 °C

Symbol

V

DS

I

D

I

DM

P

D

TJ, T

STG

3

20

2

Alpha & Omega Semiconductor, Ltd.

A

W

AO4607

p

Thermal Characteristics: n-channel, Schottky and p-channel
Parameter

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

C

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

C

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

C

A

A

A

A

A

A

t ≤ 10s
Steady-State
Steady-State

t ≤ 10s
Steady-State
Steady-State

t ≤ 10s
Steady-State
Steady-State

Symbol Device Ty

R

R

R

R

R

R

θJA

θJL

θJA

θJL

θJA

θJL

n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
n-ch 35 60 °C/W

p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
p-ch 35 40 °C/W

Schottky 47.5 62.5 °C/W
Schottky 71 110 °C/W
Schottky 32 40 °C/W

Max Units

Alpha Omega Semiconductor, Ltd.

AO4607

Ω

N-Channel + Schottky Electrical Characteristics (T

Symbol Min Typ Max Units

Parameter Conditions

=25°C unless otherwise noted)

J

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage I

Zero Gate Voltage Drain Current

Gate-Body leakage current V

Gate Threshold Voltage V

On state drain current V

Static Drain-Source On-Resistance

Forward Transconductance

Body-Diode+Schottky Forward Voltage
Maximum Body-Diode+Schottky Continuous Current

=250µA, VGS=0V

D

VDS=24V, VGS=0V

=0V, VGS=±20V

DS

DS=VGS ID

GS

V

GS

V

GS

V

DS

=1A

I

S

=250µA

=4.5V, VDS=5V

=10V, ID=6.9A

=4.5V, ID=5.0A

=5V, ID=6.9A

=55°C

T

J

=125°C

T

J

30 V

25

µA

100 nA

1 1.9 3 V

20 A

22.5 28

31.3 38

34.5 42

mΩ

m

10 15.4 S

0.45 0.5 V

5.5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance (FET+Schottky)

Reverse Transfer Capacitance

Gate resistance

V

=0V, VDS=15V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

V

GS

680 pF

131 pF

77 pF

3 Ω

SWITCHING PARAMETERS

(10V)

Q

Q

Q

Q

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

(4.5V)

g

gs

gd

rr

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body-Diode+Schottky Reverse Recovery Time

Body-Diode+Schottky Reverse Recovery Charge

=10V, VDS=15V, ID=6.9A

V

GS

V

=10V, VDS=15V, RL=2.2Ω,

GS

R

=3Ω

GEN

I

=6.9A, dI/dt=100A/µs

F

=6.9A, dI/dt=100A/µs

I

F

13.84 nC

6.74 nC

1.82 nC

3.2 nC

4.6 ns

4.1 ns

20.6 ns

5.2 ns

ns

nC

SCHOTTKY PARAMETERS

V

F

Forward Voltage Drop I

=1.0A

F

VR=30V

I

rm

C

T

A: The value of R
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in
single pulse rating.

Maximum reverse leakage current

Junction Capacitance V

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a

θJA

is the sum of the thermal impedence from junction to lead R

θJA

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a

=30V, TJ=125°C

V

R

=30V, TJ=150°C

V

R

=15V

R

and lead to ambient.

θJL

0.45 0.5 V

0.007 0.05

3.2 10

12 20
37 pF

mA

Alpha & Omega Semiconductor, Ltd.

AO4607

Ω

P-Channel Electrical Characteristics (T

Symbol Min Typ Max Units

Parameter Conditions

=25°C unless otherwise noted)

J

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage ID=-250µA, VGS=0V

Zero Gate Voltage Drain Current

VDS=-24V, VGS=0V

Gate-Body leakage current VDS=0V, VGS=±20V

Gate Threshold Voltage VDS=V

GS ID

=-250µA

On state drain current VGS=-10V, VDS=-5V

VGS=-10V, ID=-6A

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-5A

Forward Transconductance

VDS=-5V, ID=-6A

Diode Forward Voltage IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current

TJ=55°C

TJ=125°C

-30 V

-1

-5

µA

±100 nA

-1.2 -2 -2.4 V

30 A

28 35

37 45

44 58

mΩ

m

13 S

-0.76 -1 V

-4.2 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

920 pF

190 pF

122 pF

3.6 Ω

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Total Gate Charge (10V)

Total Gate Charge (4.5V)

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=-10V, VDS=-15V, ID=-6A

VGS=-10V, VDS=-15V, RL=2.7Ω,

=3Ω

R

GEN

IF=-6A, dI/dt=100A/µs

IF=-6A, dI/dt=100A/µs

18.5 nC

9.6 nC

2.7 nC

4.5 nC

7.7 ns

5.7 ns

20.2 ns

9.5 ns

20

ns

8.8 nC

A: The value of R

A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance

value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.

rating.
B: Repetitive rating, pulse width limited by junction temperature.

B: Repetitive rating, pulse width limited by junction temperature.
C. The R

C. The R

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.

SOA curve provides a single pulse rating.

θJA

θJA

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

θJA

is the sum of the thermal impedence from junction to lead R

is the sum of the thermal impedence from junction to lead R

2

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

and lead to ambient.

and lead to ambient.

θJL

θJL

=25°C. The

=25°C. The

A

A

Alpha & Omega Semiconductor, Ltd.

AO4607

V

e

y

V

V

V

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30

10V

25

4.5V

6

5

4V

20

15

(A)

D

I

3.5

10

5

VGS=3V

0

012345

V

(Volts)

DS

Fig 1: On-Region Characteristics

60

50

)

Ω

40

VGS=4.5

(m

30

DS(ON)

R

20

VGS=10V

10

0 5 10 15 20

(Amps)

I

D

Figure 3: On-Resistance vs. Drain Current and Gat

Voltage

20

16

VDS=5V

12

(A)

D

I

8

°

4

25°C

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5

(Volts)

V

GS

Figure 2: Transfer Characteristics

1.7

1.6

ID=5A

VGS=10V

1.5

1.4

VGS=4.5V

1.3

1.2

1.1

1

Normalized On-Resistance

0.9

0.8
0 50 100 150 200

Temperature ( °C)

Figure 4: On-Resistance vs. Junction Temperature

70

)

Ω

(m

DS(ON)

R

60

50

40

30

20

ID=5A

125°C

25°C

10

246810

V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

1.0E+01

1.0E+00

1.0E-01

Amps

S

I

1.0E-02

1.0E-03

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0

V

(Volts)

SD

Figure 6: Body diode with parallel Schottk

characteristics

Alpha & Omega Semiconductor, Ltd.

AO4607

0.1sDC

d

A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10

8

VDS=15V
I

=6.9A

D

6

(Volts)

GS

4

V

2

0

02468101214

(nC)

Q

g

Figure 7: Gate-Charge characteristics

100

(Amps)

D

I

10

R

DS(ON)

limite

1

100µs

T
T

J(Max)

=150°C

=25°C

10µs

1000

900

800

f=1MHz
V

GS

700

600

C

iss

500

400

300

Capacitance (pF)

C

(FET + Schottky)

200

100

C

rss

0

oss

0 5 10 15 20 25 30

V

(Volts)

DS

Figure 8: Capacitance Characteristics: MOSFET +

Parallel Schottky

40

T

J(Max)

T

30

20

Power W

10

=0V

=150°C

=25°C

0.1

0.1 1 10 100

V

(Volts)

DS

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

10

D=Ton/(Ton+T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=62.5°C/W

θJA

)

off

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

1

0.1

Normalized Transient

Thermal Resistance

JA

θ

Z

Single Pulse

P

T

T

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4607

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30

-10V

25

-6V

-5V

20

15

(A)

D

-I

10

-4.5V

-4V

-3.5V

5

VGS=-3V

0

012345

(Volts)

-V

DS

Fig 1: On-Region Characteristics

60

55

VGS=-4.5V

VGS=-10V

)

Ω

(m

DS(ON)

R

50

45

40

35

30

25

20

15

10

0 5 10 15 20 25

(A)

-I

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

30

25

VDS=-5V

20

(A)

15

D

-I

10

5

125°C

25°C

0

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

-V

(Volts)

GS

Figure 2: Transfer Characteristics

1.60
ID=-6A

1.40

1.20

VGS=-10V

VGS=-4.5V

1.00

Normalized On-Resistance

0.80

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

100

90

ID=-6A

80

70

)

Ω

(m

60

DS(ON)

50

R

125°C

40

25°C

30

20

345678910

-V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

1.0E+01

1.0E+00

1.0E-01

1.0E-02

(A)

S

-I

1.0E-03

1.0E-04

1.0E-05

1.0E-06

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0

-V

(Volts)

SD

Figure 6: Body-Diode Characteristics

AO4607

C

J(Max)

o

o

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10

8

VDS=-15V
ID=-6A

6

(Volts)

GS

4

-V

2

0

048121620

-Q

(nC)

g

Figure 7: Gate-Charge Characteristics

100.0
T

=150°C, TA=25°C

R

DS(ON)

10.0
limited

0.1s

(Amps)

D

-I

1.0
1s

10ms

10µs

100µs

1ms

D

0.1

0.1 1 10 100

-VDS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note E)

1500

1250

C

iss

1000

750

500

Capacitance (pF)

C

oss

C

rss

250

0

0 5 10 15 20 25 30

-V

(Volts)

DS

Figure 8: Capacitance Characteristics

40

T

=150°C

J(Max)

TA=25°C

30

20

Power (W)

10

0

0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-to-

Ambient (Note E)

10

D=Ton/(Ton+T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=62.5°C/W

θJA

)

off

1

0.1

Normalized Transient

Thermal Resistance

θJA

Z

Single Pulse

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P

D

Pulse Width (s)

T

n

T

ff

AO4607

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY

(Volts)
V

0.7

0.6

0.5

0.4

F

0.3

0.2

10

1

125°C

0.1

(Amps)

F

I

0.01

25°C

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

(Volts)

V

F

Figure 12: Schottky Forward Characteristics

I

=3A

F

=1A

I

F

250

f = 1MHz

200

150

100

Capacitance (pF)

50

0

0 5 10 15 20 25 30

(Volts)

V

KA

Figure 13: Schottky Capacitance Characteristics

100

10

1

VR=30V

0.1

Leakage Current (mA)

0.01

0.1
0 25 50 75 100 125 150 175

Temperature (°C)

Figure 14: Schottky Forward Drop vs.

Junction Temperature

0.001
0 25 50 75 100 125 150 175

Temperature (°C)

Figure 15: Schottky Leakage current vs. Junction

Temperature

10

D=Ton/(Ton+T
T

J,PK=TA+PDM.ZθJA.RθJA

R

=62.5°C/W

1

0.1

Normalized Transient

Thermal Resistance

JA

θ

Z

θJA

)

off

Single Pulse

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

P

D

T

on

T

off

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)

Figure 15: Schottky Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

ALPHA & OMEGA

SEMICONDUCTOR, INC.

SO-8 Package Data

θ

PACKAGE MARKING DESCRIPTION

SYMBOLS

A
A1
A2

aaa

NOTE:

1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD

2. TOLERANCE ± 0.10 mm (4 mil) UNLESS OTHERWISE
SPECIFIED

3. COPLANARITY : 0.10 mm

4. DIMENSION L IS MEASURED IN GAGE PLANE

1.45

0.00

−−−

0.33

b

c

0.19

D

4.80

E1

3.80
e
E
h
L

θ

0.25

0.40

−−−

0°

1.27 BSC

MAXMIN NOM MIN NOM MAX

1.50

−−−

1.45

−−−

−−−

−−−

−−−

−−−5.80

−−−

−−−

−−−

−−−

1.55

0.10

−−−

0.51

0.25

5.00

4.00

6.20

0.50

1.27

0.10
8°

RECOMMENDED LAND PATTERN

DIMENSIONS IN INCHESDIMENSIONS IN MILLIMETERS

0.057

0.000

−−−

0.013

0.007

0.189

0.150

0.050 BSC

0.010

0.016

−−−

0° −−−

0.059

−−−

0.057

−−−

−−−

−−−

−−−

−−−0.228

−−−

−−−

−−−

0.061

0.004

−−−

0.020

0.010

0.197

0.157

0.244

0.020

0.050

0.004
8°

LOGO 4 6 0 7

F A Y W L C

NOTE:
LOGO - AOS LOGO
4607 - PART NUMBER CODE.
F - FAB LOCATION

A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L C - ASSEMBLY LOT CODE

SO-8 PART NO. CODE

PART NO. CODE

AO4607

4607

UNIT: mm

Rev. A

SO-8 Carrier Tape

SO-8 Reel

ALPHA & OMEGA

SEMICONDUCTOR, INC.

SO-8 Tape and Reel Data

SO-8 Tape

Leader / Trailer

& Orientation