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p
AO4413
P-Channel Enhancement Mode Field Effect Transistor
June 2002
General Description
The AO4413 uses advanced trench technology to
provide excellent R
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
Absolute Maximum Ratings T
Drain-Source Voltage -30
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
Junction and Storage Temperature Range
, and ultra-low low gate
DS(ON)
SOIC-8
Top View
S
S
S
G
=25°C
T
A
=70°C
T
A
B
D
D
D
D
=25°C unless otherwise noted
A
TA=25°C
=70°C
T
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
Features
VDS (V) = -30V
I
= -15A
D
R
R
G
< 7mΩ (VGS = -20V)
DS(ON)
< 8.5mΩ (VGS = -10V)
DS(ON)
D
S
Maximum UnitsParameter
-15
-12.8
-80
2.1
-55 to 150
3
V
V±25Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
26 40
50 75
14 24
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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AO4413
Ω
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=-250µA, VGS=0V
D
VDS=-24V, VGS=0V
VDS=0V, VGS=±25V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-10V, VDS=-5V
VGS=-20V, ID=-15A
Static Drain-Source On-Resistance
VGS=-10V, ID=-15A
VGS=-6V, ID=-10A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-15A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C
TJ=125°C
-30 V
-1
-5
±100 nA
-1.5 -2.6 -3.5 V
60 A
5.8 7
7.2 8.7
7.2 8.5
10.4
mΩ
m
m
38 S
-0.72 -1 V
-4.2 A
µA
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
VGS=0V, VDS=-15V, f=1MHz
=0V, VDS=0V, f=1MHz
GS
5034 pF
1076 pF
829 pF
2.5 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=-10V, VDS=-15V, ID=-15A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.0Ω,
R
=3Ω
GEN
Turn-Off Fall Time
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
IF=-15A, dI/dt=100A/µs
=-15A, dI/dt=100A/µs
I
F
78 nC
15.2 nC
23.6 nC
17.5 ns
19.5 ns
49 ns
30.5 ns
43
ns
38 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
-15
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
-12.8
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
-10V
40
30
(A)
D
-I
20
10
-6V
-4.5V-5V
VGS=-4V
0
012345
-V
(Volts)
DS
Fig 1: On-Region Characteristics
12
VGS=-6V
10
)
Ω
(m
8
DS(ON)
R
VGS=-10V
6
VGS=-20V
4
0 5 10 15 20 25 30
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
30
25
VDS=-5V
20
(A)
15
D
-I
125°C
10
25°C
5
0
2 2.5 3 3.5 4 4.5 5
-V
(Volts)
GS
Figure 2: Transfer Characteristics
1.6
ID=-15A
VGS=-10V
1.4
VGS=-20V
1.2
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
24
20
)
16
Ω
ID=-15A
(m
12
DS(ON)
R
8
125°C
25°C
4
4 8 12 16 20
-V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
-12.8
(A)
S
-I
-15
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
1.0E-06
0.0 0.2 0.4 0.6 0.8 1.0
-V
(Volts)
SD
Figure 6: Body-Diode Characteristics
Page 4
AO4413
o
o
o
o
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
VDS=-15V
ID=-15A
6
(Volts)
GS
4
-V
2
0
0 1020304050607080
-Q
(nC)
g
Figure 7: Gate-Charge Characteristics
100.0
10µs
10.0
R
DS(ON)
limited
100µs
1ms
10ms
0.1s
(Amps)
D
-I
1.0
T
J(Max)
=150°C
1s
10s
DC
TA=25°C
0.1
0.1 1 10 100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
8000
7000
6000
C
5000
iss
4000
3000
Capacitance (pF)
2000
1000
C
oss
C
rss
0
0 5 10 15 20 25 30
-VDS (Volts)
Figure 8: Capacitance Characteristics
40
T
=150°C
J(Max)
TA=25°C
30
20
Power (W)
10
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
D=Ton/(Ton+T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=40°C/W
θJA
)
off
In descending order
-12.8
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
-15
1
P
P
D
0.1
Normalized Transient
Thermal Resistance
θJA
Z
Single Pulse
D
T
T
n
n
T
T
ff
ff
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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