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AO4403
P-Channel Enhancement Mode Field Effect Transistor
December 2001
General Description
The AO4403 uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
, low gate charge and
DS(ON)
Features
VDS (V) = -30V
I
= -6.1 A
D
R
R
R
< 46mΩ (VGS = -10V)
DS(ON)
< 61mΩ (VGS = -4.5V)
DS(ON)
< 117mΩ (VGS = -2.5V)
DS(ON)
used to bypass the source inductance.
SOIC-8
Top View
S
S
S
G
Absolute Maximum Ratings T
D
D
D
D
=25°C unless otherwise noted
A
G
Symbol
V
Drain-Source Voltage -30
=25°C
T
B
A
T
A
=70°C
Continuous Drain
Current
A
TA=25°C
A
=70°C
Power Dissipation
T
A
Junction and Storage Temperature Range
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
D
S
Maximum UnitsParameter
-6.1
-5.1
-60Pulsed Drain Current
3
2.1
-55 to 150
V
V±12Gate-Source Voltage
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
31 40
59 75
16 24
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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AO4403
Ω
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
ID=-250µA, VGS=0V
VDS=-24V, VGS=0V
VDS=0V, VGS=±12V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-6.1A
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-5A
VGS=-2.5V, ID=-1A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-5A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C -5
=125°C 70
T
J
-30 V
-1
µA
±100 nA
-0.7 -1 -1.3 V
A
38 46
49 61
76 117
mΩ
m
m
711 S
-0.75 -1 V
-4.2 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
V
Output Capacitance
=0V, VDS=-15V, f=1MHz
GS
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
940 pF
104 pF
73 pF
6 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=-4.5V, VDS=-15V, ID=-5A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=2.4Ω,
R
=6Ω
GEN
Turn-Off Fall Time
=-5A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
I
F
IF=-5A, dI/dt=100A/µs
9.4 nC
2nC
3nC
7.6 ns
8.6 ns
44.7 ns
16.5 ns
22.7
ns
15.9 nC
A: The value of R
The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C.
A
Alpha & Omega Semiconductor, Ltd.
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AO4403
d
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
-10V
20
-4.5V
-3V
15
(A)
D
-I
10
5
-2.5V
VGS=-2V
0
012345
-V
(Volts)
DS
Fig 1: On-Region Characteristics
120
100
)
Ω
80
VGS=-2.5V
(m
60
DS(ON)
R
VGS=-4.5V
40
VGS=-10V
20
0.00 2.00 4.00 6.00 8.00 10.00
(A)
-I
D
Figure 3: On-Resistance vs. Drain Current an
Gate Voltage
10
VDS=-5V
8
6
(A)
D
-I
4
2
125°C
25°C
0
0 0.5 1 1.5 2 2.5 3
-V
(Volts)
GS
Figure 2: Transfer Characteristics
1.6
ID=-5A
VGS=-4.5V
1.4
1.2
VGS=-10V
VGS=-2.5V
ID=-2A
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
190
170
)
Ω
(m
150
130
110
ID=-2A
90
DS(ON)
70
R
125°C
50
30
25°C
10
0246810
-V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha and Omega Semiconductor, Ltd.
1.0E+01
1.0E+00
1.0E-01
1.0E-02
(A)
S
-I
1.0E-03
1.0E-04
1.0E-05
1.0E-06
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
(Volts)
SD
Figure 6: Body-Diode Characteristics
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AO4403
0.1s1s
d
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
VDS=-15V
I
=-5A
4
D
3
(Volts)
GS
2
-V
1
0
024681012
-Q
(nC)
g
Figure 7: Gate-Charge Characteristics
100.0
T
=150°C
10.0
J(Max)
T
=25°C
A
R
DS(ON)
limite
10µs
100µs
1ms
(Amps)
D
-I
1.0
10ms
1400
1200
1000
C
800
iss
600
Capacitance (pF)
400
C
oss
C
200
0
0 5 10 15 20 25 30
-V
(Volts)
DS
Figure 8: Capacitance Characteristics
40
T
J(Max)
T
A
30
20
Power (W)
10
=150°C
=25°C
0.1
0.1 1 10 100
-V
(Volts)
DS
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
D=Ton/(Ton+T
T
J,PK=TA+PDM.ZθJA.RθJA
R
=40°C/W
θJA
)
off
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
1
0.1
Normalized Transient
Thermal Resistance
JA
θ
Z
P
T
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Page 5
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Package Data
θ
NOTE:
LG - AOS LOGO
PARTN - PART NUMBER CODE.
F - FAB LOCATION
A - ASSEMBLY LOCATION
Y - YEAR CODE
W - WEEK CODE.
L N - ASSEMBLY LOT CODE
SYMBOLS
A
A1
A2
aaa
NOTE:
1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN.
THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD
2. TOLERANCE ± 0.100 mm (4 mil) UNLESS OTHERWISE
SPECIFIED
3. COPLANARITY : 0.1000 mm
4. DIMENSION L IS MEASURED IN GAGE PLANE
1.45
0.00
−−−
0.33
b
c
0.19
D
4.80
E1
3.80
e
E
h
0.25
L
0.40
−−−
θ
1.50
1.45
1.27 BSC
0°
MAXMIN NOM MIN NOM MAX
1.55
−−−
−−−
−−−
−−−
−−−
−−−5.80
−−−
−−−
−−−
−−−
0.10
−−−
0.51
0.25
5.00
4.00
6.20
0.50
1.27
0.10
8°
RECOMMENDED LAND PATTERNPACKAGE MARKING DESCRIPTION
DIMENSIONS IN INCHESDIMENSIONS IN MILLIMETERS
0.057
0.000
−−−
0.013
0.007
0.189
0.150
0.050 BSC
0.010
0.016
−−−
0° −−−
0.059
−−−
0.057
−−−
−−−
−−−
−−−
−−−0.228
−−−
−−−
−−−
0.061
0.004
−−−
0.020
0.010
0.197
0.157
0.244
0.020
0.050
0.004
8°
PART NO.
AO4400
AO4401
SO-8 PART NO. CODE
CODE
PART NO.
4400 4800
4401
AO4800
AO4801
CODE
4801
PART NO.
AO4700
AO4701
CODE
UNIT: mm
4700
4701
Page 6
SO-8 Carrier Tape
SO-8 Reel
ALPHA & OMEGA
SEMICONDUCTOR, INC.
SO-8 Tape and Reel Data
SO-8 Tape
Leader / Trailer
& Orientation
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