Datasheet ZXTS1000E6TA, ZXTS1000E6TC Datasheet (Zetex)

ZXTS1000E6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
AND SCHOTTKY DIODE

SUMMARY
Transistor: V
Schottky Diode: V

DESCRIPTION

A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded
SOT23 package.

FEATURES

Low Saturation Transistor

•

High Gain - 300 minimum

•

Low V

•

APPLICATIONS

• Mobile telecomms, PCMCIA & SCSI

• DC-DC Conversion

ORDERING INFORMATION

DEVICE REEL SIZE

=-12V, IC= -1.25A

CEO

, fast switching Schottky

F

=40V; IC= 0.5A

R

(inches)

TAPE WIDTH
(mm)

SOT23-6

QUANTITY
PER REEL

ZXTS1000E6TA 7 8mm embossed 3000 units

ZXTS1000E6TC 13

DEVICE MARKING

1000

ISSUE 1 - NOVEMBER 2000

8mm embossed

10000 units

1

Top View

ZXTS1000E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Transistor

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Continuous Collector Current I

Schottky Diode

Continuous Reverse Voltage V

Forward Current I
Non Repetitive Forward Current t≤100µs

t≤ 10ms

Package

Power Dissipation at T
single die “on”

amb

=25°C

both die “on”

Storage Temperature Range T

Junction Temperature T

C

F

I

FSM

P

CBO

CEO

EBO

R

D

stg

j

-12 V

-12 V

-5 V

-1.25

40 V

0.5 A

6.75
3

0.725

0.885

-55 to +150 °C

125 °C

A

A
A

W
W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)
single die “on”
both die “on”

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

R

θJA

R

θJA

138
113

°C/W
°C/W

ISSUE 1 - NOVEMBER 2000

2

TRANSISTOR TYPICAL CHARACTERISTICS

ZXTS1000E6

0.4

+25°C

0.3

- (V)

0.2

CE(sat)

V

0.1

0

1m

800

VCE=2V

+100°C

600

+25°C

400

- Typical Gain

-55°C

200

FE

h

0

1m

IC/IB=10

IC/IB=50

IC/IB=100

10m 100m 1 10

IC - Collector Current (A)

VCE(sat) v IC

10m 100m 1 10

IC - Collector Current (A)

hFE v IC

0.4

0.3

- (V)

0.2

CE(sat)

V

0.1

1.0

0.8

- (V)

0.6

0.4

BE(sat)

V

0.2

IC/IB=50

-55°C

+25°C
+100°C
+150°C

0

1m

10m 100m 1 10

IC - Collector Current (A)

VCE(sat) v IC

IC/IB=50

-55°C

+25°C
+100°C
+150°C

0

1m

10m 100m 1 10

IC - Collector Current (A)

VBE(sat) v IC

1.0

0.8

- (V)

0.6

0.4

BE(on)

V

0.2

0

1m

10m 100m 1 10

IC - Collector Current (A)

VBE(on) v IC

ISSUE 1 - NOVEMBER 2000

-55°C

+25°C
+100°C
+150°C

10

1

100m

- Collector Current (A)

C

I

10m

100m 100

3

DC

1s

100ms

10ms

1ms

100µs

110

VCE - Collector Emitter Voltage (V)

Safe Operating Area

ZXTS1000E6

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

TRANSISTOR ELECTRICAL CHARACTERISTICS

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter Saturation Voltage V

Base-Emitter Turn-On Voltage V

Static Forward Current Transfer
Ratio

Transition Frequency f

Output Capacitance C

Turn-On Time t

Turn-Off Time t

V

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

EBO

CES

V

CE(sat)

BE(sat)

BE(on)

h

FE

T

obo

(on)

(off)

-12 V

I

= -100µA

C

-12 V IC= -10mA*

-5 V

I

= -100µA

E

-10 nA VCB=-10V

-10 nA VEB=-4V

-25

-55

-110

-160

-185

-10 nA V

-40

-100

-175

-215

-240

mV
mV
mV
mV
mV

=-10V

CES

= -0.1A, IB= -10mA*

I

C

= -0.25A, IB=-10 mA*

I

C

= -0.5A, IB=-10 mA*

I

C

= -1A, IB= -50mA*

I

C

= -1.25A, IB= -100mA*

I

C

-990 -1100 mV IC= -1.25A, IB= -100mA*

-850 -1000 mV IC= -1.25A, VCE=2V*

300
300
200
125
75
30

490
450
340
250
140
80

= -10mA, VCE=-2V*

I

C

= -0.1A, VCE= -2V*

I

C

= -0.5A, VCE= -2V*

I

C

= -1.25A, VCE=-2V*

I

C

= -2A, VCE= -2V*

I

C

= -3A, VCE= -2V*

I

C

220 MHz IC= -50mA, VCE=-10 V

f= 100MHz

15 pF VCB= -10V, f=1MHz

50 ns VCC= -10V, IC=-1A

=-100mA

I

135 ns

B1=IB2

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS

Reverse Breakdown Voltage V

Forward Voltage V

Reverse Current I

Diode Capacitance C

Reverse Recovery Time t

*Measured under pulsed conditions.

R

rr

40 60 V IR=200µA

(BR)R

F

270
300
370
425
550
640
810

15 40

D

20 pF f=1MHz,VR=30V

10 ns switched from

4

300
350
460
550
670
780
1050

mV
mV
mV
mV
mV
mV
mV

µA

=50mA*

I

F

=100mA*

I

F

=250mA*

I

F

=500mA*

I

F

=750mA*

I

F

=1000mA*

I

F

=1500mA*

I

F

VR=30V

= 500mA to IR= 500mA

I

F

Measured at I

= 50mA

R

ISSUE 1 - NOVEMBER 2000

DIODE TYPICAL CHARACTERISTICS

ZXTS1000E6

ISSUE 1 - NOVEMBER 2000

5

ZXTS1000E6

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

e

b

2

L

E

e1

D

AA2

a

A1

DIM Millimetres Inches

Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
e 0.95 REF 0.037 REF
e1 1.90 REF 0.074 REF
L

0° 10° 0° 10°

E1

DATUM A

C

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Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 1 - NOVEMBER 2000

ISSUE 1 - NOVEMBER 2000

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