Datasheet ZXTN25012EFHTA Datasheet (Zetex) [ru]

ZXTN25012EFH

C

E

B

C

E

B

Pinout - top view

12V, SOT23, NPN medium power transistor

Summary

BV

BV

h

I

V

R

P

CEO

ECX

> 500

FE

C(cont)

CE(sat)

CE(sat)

= 1.25W

D

> 12V

> 6V

= 6A

< 32mV @ 1A

= 23m⍀

Description

Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.

Features

• High power dissipation SOT23 package

• High peak current

• Very high gain

• Low saturation voltage

• 6V reverse blocking voltage

Applications

• MOSFET gate drivers

• Power switches

• Motor control

•DC fans

• DC-DC converters

Ordering information

Device Reel size

(inches)

ZXTN25012EFHTA 7 8 3,000

Tape width

(mm)

Quantity per reel

Device marking

1C3

Issue 3 - March 2008 1 www.zetex.com

© Zetex Semiconductors plc 2008

ZXTN25012EFH

Absolute maximum ratings

Parameter Symbol Limit Unit

Collector-base voltage V

Collector-emitter voltage V

Emitter-collector voltage (reverse blocking) V

Emitter-base voltage V

Continuous collector current

(c)

Base current I

Peak pulse current I

Power dissipation at T

amb

=25°C

(a)

Linear derating factor

Power dissipation at T

amb

=25°C

(b)

Linear derating factor

Power dissipation at T

amb

=25°C

(c)

Linear derating factor

Power dissipation at T

amb

=25°C

(d)

Linear derating factor

CBO

CEO

ECX

EBO

I

C

B

CM

P

D

P

D

P

D

P

D

20 V

12 V

6V

7V

6A

1A

15 A

0.73

5.84

1.05

8.4

1.25

9.6

1.81

14.5

W

mW/°C

W

mW/°C

W

mW/°C

W

mW/°C

Operating and storage temperature range T

j

, T

stg

- 55 to 150 °C

Thermal resistance

Parameter Symbol Limit Unit

Junction to ambient

Junction to ambient

Junction to ambient

Junction to ambient

NOTES:

(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in

still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.

(a)

(b)

(c)

(d)

R

R

R

R

⍜JA

⍜JA

⍜JA

⍜JA

171 °C/W

119 °C/W

100 °C/W

69 °C/W

Issue 3 - March 2008 2 www.zetex.com

© Zetex Semiconductors plc 2008

Characteristics

ZXTN25012EFH

Issue 3 - March 2008 3 www.zetex.com

© Zetex Semiconductors plc 2008

ZXTN25012EFH

NOTES:

Electrical characteristics (at T

= 25°C unless otherwise stated)

amb

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown

BV

CBO

20 40 V IC = 100␮A

voltage

Collector-emitter breakdown
voltage (base open)

Emitter-base breakdown

BV

BV

CEO

EBO

12 17 V

78.3 VI

= 10mA

I

C

= 100␮A

E

voltage

Emitter-collector breakdown
voltage (reverse blocking)

Emitter-collector breakdown

BV

BV

ECX

ECO

68.0 VI

= 100␮A, RBC < 1k⍀ or

E

0.25V > V

4.5 5.5 V IE = 100␮A,

voltage (base open)

Collector-base cut-off current I

Emitter-base cut-off current I

Collector-emitter saturation
voltage

Base-emitter saturation
voltage

Base-emitter turn-on voltage V

Static forward current
transfer ratio

Transition frequency f

Output capacitance C

Delay time t

Rise time t

Storage time t

Fall time t

CBO

EBO

V

CE(sat)

V

BE(sat)

BE(on)

h

FE

T

OBO

d

r

s

f

500 800 1500

500 750

300 460

40 55

<1 50

0.5nA␮A

<1 50 nA V

28 32 mV

45 55 mV

60 75 mV

160 190 mV

920 1000 mV

800 900 mV

V

= 20V

CB

= 20V, T

V

CB

= 5.6V

EB

= 1A, IB = 100mA

I

C

= 1A, IB = 10mA

I

C

= 2A, IB = 40mA

I

C

= 6A, IB = 120mA

I

C

= 6A, IB = 120mA

I

C

= 6A, VCE = 2V

I

C

= 10mA, VCE = 2V

I

C

= 1A, VCE = 2V

I

C

= 4A, VCE = 2V

I

C

= 15A, VCE = 2V

I

C

260 MHz IC = 50mA, VCE = 10V

f

= 100MHz

25.6 35 pF

70.9 ns V

69.8 ns

233 ns

= 10V, f = 1MHz

V

CB

= 10V.

CC

I

= 1A,

C

= IB2= 10mA.

I

B1

71.6 ns

(*)

> -0.25V

BC

amb

= 100°C

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*)

(*) Measured under pulsed conditions. Pulse width ⱕ300␮s; duty cycle ⱕ2%.

Issue 3 - March 2008 4 www.zetex.com

© Zetex Semiconductors plc 2008

Typical characteristics

ZXTN25012EFH

Issue 3 - March 2008 5 www.zetex.com

© Zetex Semiconductors plc 2008

Package outline - SOT23

E

e

L

e1

D

A

c

E1

L1

A1

b

3 leads

ZXTN25012EFH

Dim. Millimeters Inches Dim. Millimeters Inches

Min. Max. Min. Max. Min. Max. Min. Max.

A - 1.12 - 0.044 e1 1.90 NOM 0.075 NOM

A1 0.01 0.10 0.0004 0.004 E 2.10 2.64 0.083 0.104

b 0.30 0.50 0.012 0.020 E1 1.20 1.40 0.047 0.055

c 0.085 0.20 0.003 0.008 L 0.25 0.60 0.0098 0.0236

D 2.80 3.04 0.110 0.120 L1 0.45 0.62 0.018 0.024

e0.95 NOM0.037 NOM-----

Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches

Europe

Zetex GmbH
Kusterman-Park
D-81541 München
Germany

Telefon: [phone]
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[e-mail]

For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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© Zetex Semiconductors plc 2008

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