Datasheet ZXTN2011G Datasheet (ZETEX)

ZXTN2011G

100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION
TRANSISTOR IN SOT223

SUMMARY

= 100V : R

BV

CEO

DESCRIPTION

Packaged in the SOT223 outline this new low saturation 100V NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC circuits
and various driving and power management functions.

FEATURES

6 amps continuous current

•

Up to 10 amps peak current

•

Very low saturation voltages

•

APPLICATIONS

•

Motor driving

= 36m ; IC= 6A

SAT

3

2

2

T

O

S

•

Line switching

•

High side switches

•

Subscriber line interface cards (SLIC)

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXTN2011GTA 7” 12mm
ZXTN2011GTC 13” 4,000 units

TAPE

WIDTH

embossed

QUANTITY PER

REEL

1,000 units

DEVICE MARKING

ZXTN
2011

ISSUE 1 - JUNE 2005

PINOUT

TOP VIEW

1

SEMICONDUCTORS

ZXTN2011G

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Collector-base voltage BV
Collector-emitter voltage BV
Emitter-base voltage BV
Continuous collector current

(a)

Peak pulse current I

(a)

Power dissipation at T

=25°C

A

CBO
CEO
EBO

I

C
CM

P

D

Linear derating factor
Power dissipation at T

=25°C

A

(b)

P

D

Linear derating factor
Operating and storage temperature range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient

NOTES

(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

(a)

R

⍜JA

200 V
100 V

7V
6 A

10 A

3.0
24

1.6

12.8

W

mW/°C

W

mW/°C

-55 to +150 °C

42 °C/W

SEMICONDUCTORS

ISSUE 1 - JUNE 2005

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CHARACTERISTICS

ZXTN2011G

ISSUE 1 - JUNE 2005

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SEMICONDUCTORS

ZXTN2011G

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

Collector-base breakdown voltage BV
Collector-emitter breakdown voltage BV
Collector-emitter breakdown voltage BV
Emitter-base breakdown voltage BV
Collector cut-off current I

Collector cut-off current I

R ⱕ 1k⍀
Emitter cut-off current I
Collector-emitter saturation voltage V

Base-emitter saturation voltage V
Base-emitter turn-on voltage V
Static forward current transfer ratio H

Transition frequency f

CBO
CER
CEO
EBO

CBO

CER

EBO

CE(SAT)

BE(SAT)
BE(ON)
FE

T

200 235 V IC=100␮A
200 235 V IC=1␮A, RBⱕ1k⍀
100 115 V IC=10mA*

78.1 VIE=100␮A
20

0.5nA␮A
20

0.5nA␮A

VCB=150V

=150V,T

V

CB

V

=150V

CB

=150V,T

V

CB

10 nA VEB=6V

21

35

mV

IC=0.1A, IB=5mA*
50
95

180

65
125
220

mV
mV
mV

I
I
I

=1A, IB=100mA*

C

=2A, IB=100mA*

C

=5A, IB=500mA*

C

1020 1120 mV IC=5A, IB=500mA*

920 1000 mV IC=5A, VCE=2V*
100
100

30
10

230

200

60
20

300

IC=10mA, VCE=2V*

=2A, VCE=2V*

I

C

=5A, VCE=2V*

I

C

=10A, VCE=2V*

I

C

130 MHz IC=100mA, VCE=10V

f=50MHz
Output capacitance C
Switching times t

t

OBO
ON
OFF

26 pF VCB=10V, f=1MHz*
41

1010

ns IC=1A, VCC=10V,

=100mA

I

B1=IB2

amb

amb

=100⬚C

=100⬚C

* Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.

SEMICONDUCTORS

4

ISSUE 1 - JUNE 2005

TYPICAL CHARACTERISTICS

ZXTN2011G

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SEMICONDUCTORS

ZXTN2011G

PAD LAYOUT DETAILSPACKAGE OUTLINE

Controlling dimensions are in millimeters. Approximate conversions are given in inches

PACKAGE DIMENSIONS

DIM

Millimeters Inches

Min Max Min Max Min Max Min Max

DIM

A - 1.80 - 0.071 e 2.30 BSC 0.0905 BSC

A1 0.02 0.10 0.0008 0.004 e1 4.60 BSC 0.181 BSC

b 0.66 0.84 0.026 0.033 E 6.70 7.30 0.264 0.287

b2 2.90 3.10 0.114 0.122 E1 3.30 3.70 0.130 0.146

C 0.23 0.33 0.009 0.013 L 0.90 - 0.355 ­D 6.30 6.70 0.248 0.264 - ----

Millimeters Inches

© Zetex Semiconductors plc 2005

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ISSUE 1 - JUNE 2005

SEMICONDUCTORS

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