Datasheet ZXT13P12DE6 Datasheet (ZETEX)

ZXT13P12DE6

C

C

SuperSOT4™
12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY
V

=-12V; R

CEO

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.

FEATURES

Extremely Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

characterised up to 15A

h

•

FE

I

=4A Continuous Collector Current

•

C

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXT13P12DE6TA 7 8mm embossed 3000 units

ZXT13P12DE6TC 13 8mm embossed 10000 units

= 37m ;IC= -4A

SAT

(inches)

TAPE WIDTH
(mm)

QUANTITY
PER REEL

SOT23-6

C

C

B

Top View

E

DEVICE MARKING

P12D

ISSUE 1 - DECEMBER 1999

1

ZXT13P12DE6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

j:Tstg

-20 V

-12 V

-7.5 V

-15 A

-4 A

-500 mA

1.1

8.8

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

W

W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

ISSUE 1 - DECEMBER 1999

2

113 °C/W

73 °C/W

TYPICAL CHARACTERISTICS

10

DC

1

1s

100ms

10ms

100m

Collector Current (A)

C

Single Pulse Tamb=25°C

I

10m

100m 1 10

VCECollector-Emitter Voltage (V)

120

)

100

(°C/W

80

D=0.5

60

1ms

100µs

Safe Operating Area

ZXT13P12DE6

1.2

)

1.0

(W

0.8

0.6

0.4

er Dissipation

Pow

0.2

ax
M

0.0
0 20 40 60 80 100 120 140 160

Temperature (°C)

Derating Curve

40

D=0.2

al Resistance

20

0

Therm

100µ 1m 10m 100m 1 10 100 1k

D=0.1

Single Pulse

D=0.05

Pulse Width (s)

Transient Thermal Impedance

ISSUE 1 - DECEMBER 1999

3

ZXT13P12DE6

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter Saturation Voltage V

Base-Emitter Turn-On Voltage V

Static Forward Current Transfer
Ratio

Transition Frequency f

Output Capacitance C

Turn-On Time t

Turn-Off Time t

V

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

EBO

CES

V

CE(sat)

BE(sat)

BE(on)

h

FE

T

obo

(on)

(off)

-20 -33 V IC=-100␮A

-12 -25 V IC=-10mA*

-7.5 -8.5 V IE=-100␮A

-100 nA VCB=-16V

-100 nA VEB=-6V

-100 nA V

-7.5

-10

-68

-135

-200

-150

-90

-175

-250

-175

mV
mV
mV
mV
mV

=-16V

CES

=-0.1A, IB=-10mA*

I

C

=-1A, IB=-10mA*

I

C

=-3A, IB=-50mA*

I

C

=-4A, IB=-50mA*

I

C

=-4A, IB=-400mA*

I

C

-1.0 V IC=-4A, IB=-50mA*

-0.9 V IC=-4A, VCE=-2V*

300
300
200

20

500
450
300

30

900

=-10mA, VCE=-2V*

I

C

=-1A, VCE=-2V*

I

C

=-4A, VCE=-2V*

I

C

=-15A, VCE=-2V*

I

C

55 MHz IC=-50mA, VCE=-10V

f=50MHz

115 pF VCB=-10V, f=1MHz

70 ns VCC=-10V, IC=-3A

=-60mA

I

265 ns

B1=IB2

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle  2%

ISSUE 1 - DECEMBER 1999

4

100m

Tamb=25°C

ZXT13P12DE6

TYPICAL CHARACTERISTICS

0.25

IC/IB=50

0.20

(V)

CE(SAT)

V

IC/IB=100

10m

IC/IB=50

1m

1m 10m 100m 1 10

IC/IB=10

ICCollector Current (A)

V

CE(SAT)vIC

1.6

1.4

100°C

1.2

ain
G

1.0

0.8

alised

0.6

0.4

orm
N

0.2

0.0
1m 10m 100m 1 10

25°C

-55°C

ICCollector Current (A)

hFEvI

C

VCE=2V

0.15

(V)

0.10

CE(SAT)

V

0.05

0.00
1m 10m 100m 1 10

100°C

25°C

ICCollector Current (A)

V

CE(SAT)vIC

IC/IB=50

1.0

0.8

(V)

0.6

BE(SAT)

V

0.4

1m 10m 100m 1 10

-55°C

25°C

100°C

ICCollector Current (A)

V

BE(SAT)vIC

-55°C

VCE=2V

1.0

(V)

)
N

BE(O

V

0.8

0.6

0.4

-55°C

25°C

100°C

1m 10m 100m 1 10

ICCollector Current (A)

V

BE(ON)vIC

ISSUE 1 - DECEMBER 1999

5

ZXT13P12DE6

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

e

b

2

L

E

e1

D

AA2

a

A1

DIM Millimetres Inches

Min Max Min Max

A 0.90 1.45 0.35 0.057

A1 0.00 0.15 0 0.006

A2 0.90 1.30 0.035 0.051

b 0.35 0.50 0.014 0.019

C 0.09 0.20 0.0035 0.008

D 2.80 3.00 0.110 0.118

E 2.60 3.00 0.102 0.118

E1 1.50 1.75 0.059 0.069

L 0.10 0.60 0.004 0.002

e 0.95 REF 0.037 REF

e1 1.90 REF 0.074 REF

L

0° 10° 0° 10°

E1

DATUM A

C

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 1 - DECEMBER 1999

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