Datasheet ZXT12P12DXTA, ZXT12P12DXTC Datasheet (Zetex)

ZXT12P12DX

SuperSOT4™
DUAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY
V

=-12V; R

CEO

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.

FEATURES

Extremely Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

characterised up to 12A

h

•

FE

I

=3A Continuous Collector Current

•

C

• MSOP8 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXT12P12DXTA 7

ZXT12P12DXTC 13

= 47m ;IC= -3A

SAT

(inches)

B1

TAPE WIDTH
(mm)

12mm embossed

12mm embossed

C1

E1

QUANTITY
PER REEL

1000 units

4000 units

B2

E1
B1
E2

B2

Top View

MSOP8

1
2

3

4

C2

8
7
6
5

E2

C1
C1
C2

C2

DEVICE MARKING

T12P12DX

ISSUE 1 - MARCH 2000

1

ZXT12P12DX

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor

Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor

Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

P

D

j:Tstg

-20 V

-12 V

-7.5 V

-15 A

-3 A

-500 mA

0.87

6.9

mW/°C

1.04

8.3

mW/°C

1.25
10

mW/°C

-55 to +150 °C

W

W

W

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

θJA

θJA

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

ISSUE 1 - MARCH 2000

2

143 °C/W

100 °C/W

120 °C/W

CHARACTERISTICS

ZXT12P12DX

ISSUE 1 - MARCH 2000

3

ZXT12P12DX

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter Saturation Voltage V

Base-Emitter Turn-On Voltage V

Static Forward Current Transfer
Ratio

Transition Frequency f

Output Capacitance C

Turn-On Time t

Turn-Off Time t

V

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

EBO

CES

V

CE(sat)

BE(sat)

BE(on)

h

FE

T

obo

(on)

(off)

-20 -35 V IC=-100␮A

-12 -28 V IC=-10mA*

-7.5 -8.5 V IE=-100␮A

-100 nA VCB=-16V

-100 nA VEB=-6V

-65

-195

-140

-100 nA V

-8

-11

-85

-270

-190

mV
mV
mV
mV

=-16V

CES

=-0.1A, IB=-10mA*

I

C

=-1A, IB=20mA*

I

C

=-3A, IB=-30mA*

I

C

=-3A, IB=-150mA*

I

C

-0.88 -0.95 V IC=-3A, IB=-30mA*

-0.84 -0.90 V IC=-3A, VCE=-2V*

300
300
200

20

450
450
300

40

900

=-10mA, VCE=-2V*

I

C

=-1A, VCE=-2V*

I

C

=-3A, VCE=-2V*

I

C

=-12A, VCE=-2V*

I

C

85 MHz IC=-50mA, VCE=-10V

f=-50MHz

75 pF VCB=-10V, f=1MHz

100 ns VCC=-10V, IC=-3A

=-60mA

I

1710 ns

B1=IB2

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 1 - MARCH 2000

4

TYPICAL CHARACTERISTICS

ZXT12P12DX

ISSUE 1 - MARCH 2000

5

ZXT12P12DX

PACKAGE DIMENSIONS

D

5678

E

234

1

eX6

A1

B

H

C

L

Conforms to JEDEC MO-187 Iss A

DIM Millimetres Inches

MIN MAX MIN MAX

A 1.10 0.043

A1 0.05 0.15 0.002 0.006

B 0.25 0.40 0.010 0.016

C 0.13 0.23 0.005 0.009

D 2.90 3.10 0.114 0.122

e 0.65 BSC 0.0256 BSC

E 2.90 3.10 0.114 0.122

H 4.90 BSC 0.193 BSC

L 0.40 0.70 0.016 0.028

q° 0° 6° 0° 6°

PAD LAYOUT DETAILS

θ°

Zetex plc.
Fields NewRoad, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong © Zetex plc 2000
Telefon: [phone] Telephone: [phone] Telephone:[phone]
Fax: [phone] Fax: [phone] Fax: [phone] Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 1 - MARCH 2000

6