Datasheet ZXT11N15DFTA, ZXT11N15DFTC Datasheet (Zetex)

SuperSOT4™
15V NPN SILICON LOW SATURATION TRANSISTOR

SUMMARY
V

=15V; R

CEO

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.

FEATURES

Extremely Low Equivalent On Resistance

•

Extremely Low Saturation Voltage

•

h

characterised up to 5A

•

FE

=3A Continuous Collector Current

• I

C

• SOT23 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

= 37m ;IC= 3A

SAT

(inches)

TAPE WIDTH
(mm)

QUANTITY
PER REEL

ZXT11N15DF

SOT23

E

C

B

Top View

ZXT11N15DFTA 7 8mm embossed 3000 units

ZXT11N15DFTC 13 8mm embossed 10000 units

DEVICE MARKING

1N5

ISSUE 1 - DECEMBER 1999

1

ZXT11N15DF

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Power Dissipation at TA=25°C (a)
Linear Derating Factor

Power Dissipation at TA=25°C (b)
Linear Derating Factor

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

P

D

P

D

j:Tstg

40 V

15 V

7.5 V

5A

3A

500 mA

625

5

806

6.4

mW

mW/°C

mW

mW/°C

-55 to +150 °C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

2

200 °C/W

155 °C/W

ISSUE 1 - DECEMBER 1999

TYPICAL CHARACTERISTICS

0.7

)

0.6

(W

0.5

0.4

0.3

er Dissipation

0.2

Pow

0.1

ax
M

0.0
0 20 40 60 80 100 120 140 160

225

)

200

175

(°C/W

150

125

D=0.5

100

75

D=0.2

al Resistance

50

25

0

Therm

100µ 1m 10m 100m 1 10 100 1k

Transient Thermal Impedance

Temperature (°C)

Derating Curve

Single Pulse

D=0.05

D=0.1

Pulse Width (s)

ZXT11N15DF

10

DC

1

1s

100ms

10ms

100m

Collector Current (A)

C

I

Single Pulse Tamb=25°C

10m

100m 1 10

VCECollector-Emitter Voltage (V)

1ms

100µs

Safe Operating Area

ISSUE 1 - DECEMBER 1999

3

ZXT11N15DF

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

Emitter-Base Breakdown Voltage V

Collector Cut-Off Current I

Emitter Cut-Off Current I

Collector Emitter Cut-Off Current I

Collector-Emitter Saturation
Voltage

Base-Emitter Saturation Voltage V

Base-Emitter Turn-On Voltage V

Static Forward Current Transfer
Ratio

Transition Frequency f

Output Capacitance C

Turn-On Time t

Turn-Off Time t

V

(BR)CBO

V

(BR)CEO

(BR)EBO

CBO

EBO

CES

V

CE(sat)

BE(sat)

BE(on)

h

FE

T

obo

(on)

(off)

40 V IC=100␮A

15 V IC=10mA*

7.5 V IE=100␮A

100 nA VCB=32V

100 nA VEB=6V

57
37

110

100 nA V

7

10
80
55

150

mV
mV
mV
mV

=32V

CES

=0.1A, IB=10mA*

I

C

=1A, IB=10mA*

I

C

=1A, IB=100mA*

I

C

=3A, IB=150mA*

I

C

0.9 1.0 V IC=3A, IB=150mA*

0.85 1.0 V IC=3A, VCE=2V*

200
300
250
200
150

900

=10mA, VCE=2V*

I

C

=200mA, VCE=2V*

I

C

=1A, VCE=2V*

I

C

=3A, VCE=2V*

I

C

=5A, VCE=2V*

I

C

145 MHz IC=50mA, VCE=10V

f=50MHz

26 pF VCB=10V, f=1MHz

110 ns VCC=10V, IC=3A

=30mA

I

220 ns

B1=IB2

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ISSUE 1 - DECEMBER 1999

4

TYPICAL CHARACTERISTICS

ZXT11N15DF

0.25

IC/IB=50

0.20

0.15

(V)

0.10

CE(SAT)

V

0.05

0.00
1m 10m 100m 1 10

100°C

25°C

ICCollector Current (A)

V

CE(SAT)vIC

1.2

100°C

1.0

ain
G

0.8

0.6

alised

0.4

orm
N

0.2

0.0
1m 10m 100m 1 10

25°C

-55°C

VCE=2V

ICCollector Current (A)

hFEvI

C

-55°C

T

=25°C

100m

(V)

10m

CE(SAT)

V

amb

IC/IB=100

IC/IB=50

1m

1m 10m 100m 1 10

IC/IB=10

ICCollector Current (A)

V

CE(SAT)vIC

IC/IB=50

1.0

0.8

(V)

0.6

BE(SAT)

V

0.4

-55°C

25°C

100°C

1m 10m 100m 1 10

ICCollector Current (A)

V

BE(SAT)vIC

VCE=2V

1.0

-55°C

0.8

(V)

)
N

BE(O

V

0.6

0.4

25°C

100°C

1m 10m 100m 1 10

ICCollector Current (A)

V

BE(ON)vIC

ISSUE 1 - DECEMBER 1999

5

ZXT11N15DF

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

N

DIM Millimetres Inches

Min Max Min Max

A 2.67 3.05 0.105 0.120

B 1.20 1.40 0.047 0.055

C – 1.10 – 0.043

D 0.37 0.53 0.0145 0.021

F 0.085 0.15 0.0033 0.0059

G NOM 1.9 NOM 0.075

K 0.01 0.10 0.0004 0.004

L 2.10 2.50 0.0825 0.0985

NOM 0.95 NOM 0.037

N

Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong © Zetex plc 1999
Telefon: [phone] Telephone: [phone] Telephone:[phone]
Fax: [phone] Fax: [phone] Fax: [phone] Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.

ISSUE 1 - DECEMBER 1999

6