Datasheet ZXRD100ANQ16TA, ZXRD100ANQ16TC, ZXRD100APQ16TA, ZXRD100APQ16TC, ZXRD1033NQ16TA Datasheet (Zetex)

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Page 1

Very high efficiency SimpleSyncTM converter.

FEATURES

• > 95% Efficiency

• Fixed frequency (adjustable) PWM

• Voltage mode to ensure excellent stability &

transient response

• Low quiescent current in shutdown mode,15µA

• Low battery flag

• Output down to 2.0V

• Overload protection

• Demonstration boards available

• Synchronous or non-synchronous operation

• Cost effective solution

• N or P channel MOSFE Ts

• QSOP16 package

• Fixed 3.3, 5V and adjustable outputs

• Programmable soft st art

APPLICATIONS

• High efficiency 5 to 3.3V converters up to 4A

• Sub-notebook co mputers

• Embedded proc essor power supply

• Distribu ted power supply

• Portable instruments

• Local on card conversion

• GPS systems

DESCRIPTION

The ZXRD1000 series provides complete control and protection functions for a high efficiency (> 95%) DC-DC converter solution. The choice of external MOSFETs allow the designer to size devices according to application. Th e ZXRD1000 series uses advanced DC-DC converter techniques to provide synchronous drive capability, using innovative circuits that allow easy and cost effective implementation of shoot through protection. The

ZXRD1000 series can be used with an all N channel topology or a combination N & P channel topology. Additional functionality includes shutdown control, a user adjustable low battery flag and simple adjustment of the fixed PWM switching frequency. The controller is available with fixed outputs of 5V or

3.3V and an adjustable (2.0 to 12V) output.

4.5-10V

ZXM64N02X

L1 15µH

C6 1µF

ZHCS1000

330pF

R3 3k

R1 100k

1µF

0.01R

22µF

D3 BAT54

C10

1µF

10k

2.2µF

68µF

1µF

C5 1µF

x2 680µF

R6 10k

R5 6k

Cx2

0.01µF

CX1

0.022µF

RX 2k7

ZXM64N02X

R2 680R

D2 BAT54

C11 1µF

1µF

3.3V 4A

C9 1µF

120µF

OUT

SENSE

Bootstrap

GNDG

PWR

SET

Decoup

SENSE+

SENSE -

LBF

SHDN

INT

Delay

Comp

DRIVE

8 16 15

6 5

Low input flag

Shut Down

IC1

HIGH EFFICIENCY SIMPLESYNC PWM DC-DC CONTROLLERS

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 2

ABSOLUTE MAXIMUM RATINGS

Input without bootstrap (P suffix) 20V Input with bootstrap(N suffix) 10V Bootstrap voltage 20V Shutdown pin V

SET

pin V

SENSE

+, R

SENSE -

Power dissipation 610mW (Note 4) Operating temperature -40 to +85°C Storage temperature -55 to +125°C

ELECTRICAL CHARACTERISTICS TEST CONDITIONS (Unless otherwise stated) T

amb

=25°C

Symbol Parameter Conditions Min Typ Max Unit

IN(min)

Min. Operating Voltage No Output Device 4.5 V

(Note 1)

Feedback Voltage V

=5V,IFB=1mA 1.215 1.24 1.265 V

4.5<V

<18V 1.213 1.24 1.267 V

50µA<I

<1mA,VIN=5V

1.215 1.24 1.265 V

DRIVE

Gate Output Drive Capability CG=2200pF(Note 2)

=1000pF

= 4.5 V to maximim

supply (Note 3)

60 35

ns ns

Supply Current VIN=5V 1620mA Shutdown Current V

SHDN

= 0V;VIN=5V 15 50

µA

osc

(Note 5)

Operating frequency range Frequency with timing capacitor C3=1300pF

=330pF

50 200

300 kHz

osc(tol)

Oscillator Tol.

±25

MAX

Max Duty Cycl e N Channel

P Channel

15 0

94 100

% %

RSENSE

SENSE

voltage differe ntial -40 to +85°C 50 mV

CMRSENSE

Common mode range of V

RSENSE

-40 to +85°C 2 V

LBF

SET

Low Battery Flag set voltage 1.5 V

LBF

OUT

Low Battery Flag output Active Low 0.2 0.4 V

LBF

HYST

Low Battery Fl ag Hyst eresis 10 20 50 mV

LBF

SINK

Low Battery Flag Sink Current -40 to +85°C 2 mA

SHDN

Shutdown Threshold Voltage Low(off)

High(on) 1.5

0.25 V V

SHDN

Shutdown Pin Source Current 10

µA

ISSUE 4 - OCTOBER 2000

Note 1. V

has a different function between fixed and adjustable controller options. Note 2. 2200pF is the maximum recommended gate capacitance. Note 3. Maximum supply for P phase controllers is 18V,maximum supply for N phase controllers is 10V. Note 4. See V

derating graph in Typical Characteristics. Note 5. The maximum frequency in this application is 300kHz. For higher frequency operation contact Zetex Applications Department.

ZXRD1000 SERIES

Page 3

-40 -20 0 20 40 60 80 100

Temperatu re (°C)

1.23

1.235

1.24

1.245

1.25

(V)

VFB v Temperatur e

VIN=5V V

OUT

=3.3V

4681012141618

VIN (V)

1.236

1.238

1.24

1.244

VFB v VIN

(V)

1.242

OUT

=3.3V

4681012141618

VIN (V)

0.99

1.00

1.01

Normalised LBSET v VIN

1.02

-40 -20 0 20 40 60 80 100

Temperatu re (°C)

0.995

1.000

1.005

Normalised LB

SET

Normalised LBSET v Temperature

VIN=5V

-40 -20 0 20 40 60 80 100

Temperatu re (°C)

190

195

200

205

210

FOSC v Temperature

VIN=5V C3=330pF

4681012141618

VIN(V)

198

199

200

202

FOSC v VIN

OSC

(kHz)

201

197

C3=330pF

OSC

(kHz)

TYPICAL CHARACTERISTICS

Normalised LB

SET

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 4

4 6 8 101214 1618

VIN(V)

Supply Current (mA)

204681012141618

VIN(V)

Supply Current v V

N Phase Device

Supply Current (mA)

1nF 10nF

T iming Capacitance

200

300

OSC

v Capacitance

OSC

(kHz)

100

0 100pF

Vin=5V

10 20 30 40 50

RSENSE (m⍀)

Current Limit v R

SENSE

Current Li m i t (A )

VIN=5V V

OUT=3.3V

-40 -20 0 20 40 60 80 100

Temperature (°C)

(V)

VINDerating v Temperature

CG=2200pF

Supply Current v V

P Phase Device

TYPICAL CHARACTERISTICS

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

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DETAILED DESCRIPTION

The ZXRD1000 series can be configured to use either N or P channel MOSFETs to suit most applications. The most popular format, an all N channel synchronous solution gives the optimum efficiency. A feature of the ZXRD1000 series solution is the unique method of generating th e synchronous dr ive, called SimpleSync . Most solutions use an additional output from the contro ller, inverted and delayed from the main switch drive. The ZXRD1000 series solution uses a simple overwind ing on the mai n choke (wou nd on the same core at no real cost penalty) plus a small ferrite bead . This means that the synchronous FET is only enhanced when the main FET is turned off. This reduces the ‘blanking period’ required for shootthrough protection, increasing efficien cy and allowing smaller catch diodes to be used, making the controller simpler and less costly by avoiding complex timing circuitry. Included on chip are numerou s functions that allow flexibility to suit most applications. The nominal switching frequency (200kHz) can be adjusted by a simple timing capacitor, C3. A low battery detect circuit is also provided. Off the shelf components are availabl e from major manufacturers such as Sumida to provide either a single winding inductor for non-synchronous applications or a coil with an over-winding for synchronous applications. The combination of these switching characteristics, innovative circuit design and excellent user flexibility, make the ZXRD1000 series DC-DC solutions some of the smallest and most cost effective and electrically efficient currently available. Using Zetex’s HDMOS low R

DS(on)

devices, ZXM64N02X for the main and synchronous switch, efficiency can peak at upto 95% and remains high over a wide range of operating currents. Programm able soft start can also be adjusted via the capacitor, C7, in the compens ation loop.

What is SimpleSyncTM?

Conventional Methods

In the conventional approach to the synchronous DC-DC solution, much care has to be taken with the timing constraints between the main and synchronous switching devices. Not only is thi s dependent upon individual MOSF ET gate thresh olds (whi ch vary fr om device to device within data sheet limits and over temperature), but it is also somewhat dependent up on magnetics, layout and other parasitics. This normally means that significant ‘dead time’ has to be factored in to the design between the main and synchronous devices being turned off and on respectively. Incorrect application of dead time constraints can potentially lead to catastrophic short circuit conditions between V

and GND. For some battery operated

systems this can not only damage MOSFETs, but also the battery itself. To realise correct ‘dead time’ implementation takes complex circuitry and hence implies additional cost.

The ZETEX Me thod

Zetex has taken a different approach to solving these problems. By looking at the basic architecture of a synchronou s converter, a n ovel approach u sing the main circuit inductor was developed. By taking the inverse waveform found at the input to the main inductor of a non-synchronous solution, a synchronous drive waveform can be generated that is always relative to the main drive waveform and inverted with a small delay. This waveform can be used to drive the synchron ous switch which means no complex circuitry in the IC need be used to allow for shoot-through protection.

Implementation

Implementation was very easy and low cost. It simply meant peeling off a strand of the main inductor winding and isolating it to form a coupled secondary winding. These are available as standard items referred to in the applications ci rcuits parts list.The use of a small, surface mount, inexpensive ’square loop ’ ferrite bead provides an excellent method of eliminating shoot-through due to variation in gate thresholds. The bead essentially acts as a high impedance for the few nano seconds that shoot-through would normally occur. It saturates very quickly as the MOSFETs attain steady state operation, reducing the bead impedance to virtually zero.

Benefits

The net result is an innovative solution that gives additional benefits whilst lowering overall implementation costs. It is also a technique that can be simply omitted to make a non-synchronous controller, saving further cost, at the expense of a few efficiency points.

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 6

Functional Block Diagram

PIN DESCRIPTIONS ‡ See relevant Applications Section

Pin No. Name Description 1 Bootstrap Bootstrap circuit for generating gate drive 2V

DRIVE

Output to the gate drive circuit for main N/P channel switches

3PWRG

Power ground

Signal ground

Timing Capacitor sets oscillator frequency. ‡

INT

Internal Bias Circuit. Decouple with 1µF ceramic capacitor

SENSE+

Higher potential input to the current sense for current limit circuit

SENSE-

Lower potential input to the current sense for current limit circuit

SHDN Shutdown control. Active low. 10 Dec oup Opt ional short ci rcuit and overloa d decoupling capaci tor for increased accurac y 11

LBF Low battery flag output. Active low, open collec tor output 12 LB

SET

Low battery flag set. Can be connected to VIN if unused, or threshold set via potential divider. ‡

13 V

Input Voltage 14 Delay External R and C to set the desired cycle time f or hiccup circuit. ‡ 15 Comp Compensation pin to allow for stability components and soft start. ‡ 16 V

Feedback Voltage. This pin has a different function between fi xed and

adjustable controller options. The appropriate controller must be used for

the fixed or adjustable solution. Connect to V

OUT

for fixed output, or to

potential divider for adjustable output. ‡

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 7

Applications

Note: Component names refer to designators shown in the application circuit diagrams.

Output Capa citors

Output capacitors are a critical choice in the overall performance of the so lution. They are required to filter the output and supply load tr ansient cur rent. They ar e also affected by the switching frequency, ripple current, di/dt and magnitude of tran sient load current. ESR plays a key role in determining the value of capacitor to be used. Combination of both high frequency, low value ceramic capacitors and low ESR bulk storage capacitors optimised for switching applications provide the best response to load transients and ripple requirements. Electrolytic capacitors with low ESR are larger and more expensive so the ultimate choice is always a compromise between size, cost and performance. Care must also be taken to ensure that for large capacitors, the ESL of the leads does not become an issue. Excellent low ESR tantalum or electrolytic capacitors are available from Sanyo OS-CON, AVX, Sprague and Nichicon.

The output capacitor will also affect loop stability, transient performance. The capacitor ESR should preferably be of a similar value to the sense resistor. Parallel devices may be required.

RIPPLE(RMS)

0.29 V

OUT

(VIN−V

OUT

)

L f V

where L= output filter inductance f= switching frequency

For output v oltage ripple it is ne c e s sary to know th e peak ripple current which is given by:

pk−pk

OUT

( VIN− V

OUT)

L f V

Voltage ripple is then:V

RIPPLE

= I

−

∗ ESR

Input Capacitors

The input capacitor is chosen for its RMS current and voltage rating. The use of low ESR electrolytic or tantalum capacitors is recommended. Tantalum capacitors should have their voltage rating at 2V

(max), electrolytic at 1.4VIN(max). I

RMS

can be

approximated by:

RMS

= I

OUT

√

OUT(VIN−VOUT

))

Underspecification of this parameter can affect long term reliability. An additonal ceramic capacitor should be used to provide high frequency decoupli ng at V

IN.

Also note that the input capacitance ESR is effectively in series with the input and hence contributes to efficiency losses related to I

RMS

* ESR of the input capacitor.

MOSFET Selection

The ZXRD1000 family can be configured in circuits where either N or P channel MOSFETs are employed as the main switch. If an N channel device is used, the corresponding N phase controller must be chosen. Similarly, for P channel main switch a P phase controller must be used. The ordering information has a clear identifier to distinguish between N and P phase controllers.

The MOSFET selection is subject to thermal and gate drive considerations. Care also has to be taken to allow for transition losses at high input voltages as well as R

DS(ON)

losses for the main MOSFET. It is recommended that a device with a drain source breakdown of at least 1.2 times the maximum V

should be used. For optimum efficiency , two N channel low R

DS(on)

devices are required. MOSFETs should be selected with the lowest R

DS(ON)

consistent with the output current required. As a guide, for 3-4A output, <50mΩ devices would be optimum, provided the devices are low gate threshold and low gate charge. Typically look for devices that will be fully enhanced with 2.7V V

for 4-5A capability. Zetex offers a range o f low R

DS(ON)

logic level MOSFETs which are specifically designed with DC-DC power conversion in mind. Packaging includes SOT23, SOT23-6 and MSOP8 options. Ideal examples of optimum devices would be Zetex ZXM64N03X and ZXM64N02X (N channel). Contact your local Zetex office or Zetex web page for further informatio n.

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 8

Applications (continued) Inductor Selection

The inductor is one of the most critical com ponents in the DC-DC circuit.There are numerous types o f devices available from many suppliers. Zetex has opted to specify off the shelf encapsulated surface mount components, as these represent the best compro mise in terms of cost, size, performance and shielding.

The SimpleSync

technique uses a main inductor with an overwinding for the gate drive which is available as a standard part. However, for engineers who wish to design their own custom magnetics, this is a relatively simple and low cost construction technique . It is simply form ed by terminatin g one of the multiple strands of litz type wi re separately. It is still wound on the same core as the main winding and only has to handle enough current to charge the gate of the synchronous MOSFET. The major benefit is circuit simplification and hence lower co st of the control IC. For non-synchronous operation, the overwinding is not requir ed.

The choice of core type also plays a key role. For optimum performance, a ’swinging choke’ is often preferred. This is one which exhibits an increase in inductance as load current decreases. This has the net effect of reducing circulating current at lighter load improving efficiency. There is normally a cost premium for this added benefit. For this reason the chokes specified are the more usual constant inductance type.

Peak current of the inductor should be rated to minimum 1.2I

OUT

(max) . To maximise efficiency, the winding resistance of the main inductor should be less than the main switch output on resistance.

Schottky Diode

Selection depends on whether a synchronous or non-synchronous approach is taken. For the ZXRD1000, the unique approach to the synchronous drive means minimal dead time and hence a small SOT23 1A DC rated device will suffice, such as the ZHCS1000 from Zetex. The device i s o nly designed to prevent the body diode of the synchronous MOSFET from conducting during the initi a l s witching transi e nt until the MOSFET takes over. The device should be connected as close as possible to the source terminals of the main MOSFET.

For non-synchr onous applications , the Schottky diod e must be selected to allow for the worst case

conditions, when V

is at its highest and V

OUT

is lowest (short circuit conditions for example). Under these conditions the device must handle peak current at close to 100% duty cycle.

Frequency Adjustment

The nominal runn ing frequenc y of the contro ller is set to 200kHz in the applications shown. This can be adjusted over the range 50kHz to 300kHz by changing the value of capacitor on the C

pin. A low cost ceramic capacitor can be used. Frequency = 60000/C3 (pF) Frequency v temperature is given in the typical characteristics.

Output Voltage Adjustment

The ZXRD1000 is available as either a fixed 5V, 3.3V or adjustable output. On fixed output versions, the V

pin should be connected to th e output. Adjustable operation requires a resistive divider connected as follows:

The value of the output voltage is determined by the equation

OUT

= VFB (1 +

)

=1.24V

Note: The adjustable circuit is shown in the following transient opti misation sect ion. It is also used in t he evaluation PCB. In both t hese circuit s R

is assigned

the label R6 an d R

the label R5.

Values of resistor should be bet ween 1k and 20k to guarantee operation. Output voltage can be adjusted in the range 2V to 12V for non-synchronous ap plic ations. For synchronous applications, the minimum V

OUT

is set

by the V

threshold required for the synchronous MOSFET, as the swing in the gate using the SimpleSync

technique is approximately V

OUT

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 9

Applications (continued)

Low Battery Flag

The low battery flag threshold can be set by the user to trip at a level determined by the equation:

LBSET

= 1.25

(

1 +

)

RD is recommended to be 10k where RC and RD are connected as fo llows:

Hysteresis is typically 20mV at the LB

SET

pin.

Current Limit

A current limit is set by the low value resistor in the output path, R

SENSE

. Since the resistor is only used for overload current limit, it does not need to be accur ate and can hence be a low cost device.

The value of the current limit is set by using the equation:

LIM

(A) =

50(mV)

SENSE

(mΩ)

A graph of Current Limit v R

SENSE

is shown in the typical characteristics. This should assist in the selection of R

SENSE

appropriate to application.

If desired, R

SENSE

can also be on the input supply side.

When used on the i nput side R

SENSE

should be in series with the upper output device (i.e. in series with the drain or source in N and P channel solutions respectively).Typically in this configuration R

SENSE

will

be 20m⍀.

Hiccup Time Constant

The hiccup circuit (at the ’delay’ pin) provides overload protection for the sol ution. The threshold of the hic cup mode is determined by the value of R

SENSE,

When >50mV is developed across the sense resistor, the hiccup circuit is triggered, inhibiting t he de vice.

It will stay in this state depending upon the time constant of the resistor and capacitor connected at the ’delay’ pin. In order to keep the dissipation down under overload conditions it is recommended the circuit be off for approximately 100ms. If for other application reasons this is too long an off period, this can be reduced at least by 10:1, care needs to be taken that any increased dissipation in the external MOSFET is still acceptable. The resistor capacitor combin atio n R1,C1 recommended in the applications circuits provides a delay of 100ms.

Soft Start & Loop Stability

Soft start is determined by the time constant of the capacitor and resistor C7 and R3. Typically a good starting point is C7 = 22µF and R3 = 24k for fixed voltage variants. For fully adjustable variants see Optimising for Transient Response later in the applicati on s sect i on. Th is ne tw or k als o hel ps pr ovi de good loop stability.

Low Quiescent Shutdown

Shutdown control is provided via the SHDN pin, putting the device in to a low quiescent sleep mode. In some circumstances where rapid sequencing of V

can occur (when VCC is turned off and back on) and V

has a very rapid rise time (100-200ms) timing conflicts can occur.

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 10

Optimising for Transient Response.

Transient response is important in applications w here the load current increases and decreases rapidly. To optimise the system for good transient response certain criteria have to be observed.

The optimum solution usi ng the ZXRD series uses th e adjustable N phase controller in synch ronous mode as represented in the diagram opposite. The external networks for this solution require the use of the adjustable controller option.

By using stan dard ’bulk’ capacitors in parall el with a single OS-CON capacitor significant performance versus cost advantage can be given in this application. The low ESR of the OS-CON capacitor provides competitive output voltage ripple at low capacitance values. The ’bulk’ capacitors aid transient response. However, the low ESR of the OS-CON capacitor can cause instability within the system. To maintain stability an RC network (R

, Cx1) has to be implemented. Furthermor e, a capacitor in parallel with R6 (C

2) is required to optimise transient r esponse. To do this the appropriate ad justable ZXRD m ust be used because the input to the internal error amplifier (pin

16) has to be accessed. The adjustable device differs from fixed controller versions in this respect. This combined with a frequency compensati on adjustment gives an optimised solution for excellent transient response.

Layout Issues

Layout is critical for the circui t to fu ncti on i n the most efficient manner in terms of electrical efficiency, thermal considerations and noise. The following guidelines should be observed:

A 2.2µF (C8) decoupling capacitor should be as close as possible to the drive MOSFETs and D1 anode. This capacitor is effectively connected across V

and G

but should be as close as possible to the appropriate components in either N or P, synchronous or non-synchronous configurations. Furthermore the G

connectio n of t he syn chron ous MO SFET/D1 and output capacitors should be close together and use either a ground plane or at the very least a low inductance PCB track.

For the standard application circuits, a Gerb er file can be made available for the layout which uses the materials as listed in the bill of materials table for the reference designs.

Referenc e Designs.

In the followin g sectio n refere nce circui ts are sh own for the ZXRD series in both synchronous and non-synchronous modes. These are shown for each of the N and P phase controllers. In each case efficiency graphs are shown for the appropriate configuration using 3.3V and 5V ZXRD devices. The BOM is then shown for the design. Additional and alternative components are shown with a ’*’. These refer to modifications to the design to optimise for transient response. Optimisation is reached using the adju stable version of either N o r P phase controller device.

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 11

4.5-10V

ZXM64N02X

L1 15µH

C6 1µF

ZHCS1000

330pF

R3 3k

R1 100k

1µF

0.01R

22µF

D3 BAT54

C10

1µF

10k

2.2µF

68µF

1µF

C5 1µF

x2 680µF

R6 10k

R5 6k

Cx2

0.01µF

CX1

0.022µF

RX 2k7

ZXM64N02X

R2 680R

D2 BAT54

C11 1µF

1µF

3.3V 4A

C9 1µF

120µF

OUT

SENSE

Bootstrap

GNDG

PWR

SET

Decoup

SENSE+

SENSE -

LBF

SHDN

INT

Delay

Comp

DRIVE

8 16 15

6 5

Low input flag

Shut Down

IC1

Op timised Transient Response, 4.5V-10V Input, 3V/4A Output, N Phase Adjustable, SimpleSync

converter 200kHz.

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 12

4.5-10V

C11

C3C2

3.3V 4A

C10

IC1

Low input flag

Shut Down

OUT

SENSE

Bootstrap

GNDG

PWR

SET

Decoup

SENSE+

SENSE -

F B

LBF

SHDN

INT

Delay

Comp

DRIVE

8 16 15

6 5

100

0.1 1

Efficiency v I

V =5.0V.

OUT

I (A)

OUT

V =7V

V =10V

Efficiency (%)

4.5V -10VInput, 3.3V/4A Output, N Phase, High Efficiency SimpleSyncTM Converter 200kHz

ZXRD1033NQ16

ZXRD1050NQ16

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 13

Ref Value Part Number Manufacturer Comments

IC1 ZXRD1033NQ16 Zetex QSOP16 Controller IC N1

>7V

<7V

ZXM64N03X ZXM64N02X ZXM64N02X

Zetex MSOP8 Low R

DS(ON)

N MOSFET 30V V

20V V

D1 1A 0.5V V

ZHCS1000 Zetex SOT23 Schottky Diode 1A

D2 10 mA 0.4V V

BAT54 Zetex SOT23 Schottky Diode

D3 10 mA 0.4V V

BAT54 Zetex SOT23 Schottky Diode R1 100k WCR0805-100k Welwyn/IRC 0805 Size R2 680⍀ WCR0805-680 Welwyn/IRC 0805 Size R3 24k WCR0805-24k Welwyn/IRC 0805 Size *R3 3k WCR0805-3k Welwyn/IRC 0805 Size R4 10k WCR0805-10k Welwyn/IRC 0805 Size *Rx 2.7K WCR0805-2.7k Welwyn/IRC 0805 Size R

SENSE

0.01⍀ LR1206R010 Welwyn/IRC Current Limit Sense Resistor

OR OR

68␮F 68␮F 68␮F

TPSD68M016R0150

20SA68M

20SV68M

AVX Sanyo OS-CON Sanyo OS-CON

68␮F 16V ’E’ low ESR 68␮F 20V PTH low ESR 68␮F 20V SMT low ESR

OUT

OR OR

470␮F *150␮F *120␮F

TPSE477M010R0200

6SA150M

6SV120M

AVX Sanyo OS-CON Sanyo OS-CON

470␮F 10V ’E’ low ESR 150␮F 6V PTH low ESR 120␮f 6V SMT low ESR

OUT

680␮F x 2 6CV68 0GX Sanyo 680␮F 6V SMT Bulk Capacitor

C1 1␮ FGeneric

1µF,1 0V.X7R Di electri c

C2 1␮ FGeneric

1µF,4 V.X7R Die lectric C3 330pF Generic 330pF,4V.X7R Dielectri c C4 1␮ FGeneric

1µF,1 0V.X7R Di electri c C5 1␮ FGeneric

1µF,1 0V.X7R Di electri c C6 1␮ FGeneric

1µF,4 V.X7R Die lectric C7 22␮FGeneric

22µF,4V.X7R Dielectric C8 2.2␮FGeneric

2.2µF,10V.X7R Dielectric

C9 1␮ FGeneric

1µF,1 0V.X7R Di electri c C10 1␮ FGeneric

1µF,1 0V.X7R Di electri c C11 1␮ FGeneric

1µF,1 0V.X7R Di electri c *Cx1 0.022␮FGeneric

0.022µF,4V.X7R Dielectric *Cx2 10nF Generic 10nF,10V.X7R Dielectric L1

15␮H 10␮H

CDRH127B-OWZ9 6001

Sumida SMT C&D Technologies (NCL)

Low Profile SMT Low Profile SMT

Fx 2785044447 FairRite SMT Ferrite Bead

* see Optimising for Transient Response Section

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 14

Low input flag

4.5-10.0V

Shut Down

C11

Bootstrap

GNDG

PWR

SET

Decoup

SENSE+

SENSE -

F B

LBF

SHDN

INT

Delay

Comp

DRIVE

C3C2

3.3V 4A

8 16 15

6 5

SENSE

IC1

C10

OUT

100

0.1 1 10

Efficiency v I

V =3.3V.

OUT

I (A)

OUT

V =5V

V =10V

Efficiency (%)

100

0.1 1 10

Efficiency v I

V=5V.

OUT

I(A)

OUT

V =7V

V =10V

Efficiency (%)

4.5V -10VInput, 3.3V/4A Output, N Phase, High Efficiency Non-Synchronous Step Down Converter 200kHz

ZXRD1033NQ16

ZXRD1050NQ16

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 15

Ref Value Part Number Manufacturer Comments

IC1 ZXRD1033NQ16 Zetex QSOP16 Controller IC N1

>7V

<7V

ZXM64N03X ZXM64N02X

Zetex MSOP8 Low R

DS(ON)

N MOSFET 30V V

20V V

D1 5A 0.5V V

50WQ04FN Ze tex Schottky Diode 5A

D2 10 mA 0.4V V

BAT54 Zetex SOT23 Schottky Diode

D3 10 mA 0.4V V

SENSE

0.01⍀ LR1206R010 Welwyn/IRC Current Limit Sense Resistor

OR OR

68␮F 68␮F 68␮F

TPSC68M02R0150

20SA68M

20SV68M

AVX Sanyo OS-CON Sanyo OS-CON

68␮F 25V ’E’ low ESR 68␮F 20V PTH low ESR 68␮F 20V SMT low ESR

OUT

OR OR

470␮F *150␮F *120␮F

TPSE477M010R0200

6SA150M

6SV120M

AVX Sanyo OS-CON Sanyo OS-CON

470␮F 10V ’E’ low ESR 150␮F 6V PTH low ESR 120␮f 6V SMT low ESR

OUT

680␮F x 2 6CV68 0GX Sanyo 680␮F 6V SMT Bulk Capacitor

C1 1␮ FGeneric

1µF,1 0V.X7R Di electri c

C2 1␮ FGeneric

1µF,4 V.X7R Die lectric C3 330pF Generic 330pF,4V.X7R Dielectri c C4 1␮ FGeneric

1µF,1 0V.X7R Di electri c C5 1␮ FGeneric

1µF,1 0V.X7R Di electri c C6 1␮ FGeneric

1µF,4 V.X7R Die lectric C7 22␮FGeneric

22µF,4V.X7R Dielectric C8 2.2␮FGeneric

2.2µF,10V.X7R Dielectric

C9 1␮ FGeneric

1µF,1 0V.X7R Di electri c C10 1␮ FGeneric

1µF,1 0V.X7R Di electri c C11 1␮ FGeneric

1µF,1 0V.X7R Di electri c *Cx1 0.022␮FGeneric

0.022µF,4V.X7R Dielectric *Cx2 10nF Generic 10nF,10V.X7R Dielectric L1

15␮H 15␮H

CDRH127-150MC DP5022P-153

Sumida Coilcraft

Low Profile SMT Low Profile SMT

* see Optimising for Transient Response Section

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 16

5V-18V

C3C2

5.0V 3A

N1 C8

Bootstrap

GNDG

PWR

SET

Decoup

SENSE+

SENSE -

F B

LBF

SHDN

INT

Delay

Comp

DRIVE

8 16 15

6 5

Low input flag

Shut Down

OUT

SENSE

IC1

100

0.1 1 10

Efficiency v I

V=5V.

OUT

I(A)

OUT

V =7V

V =12V

Efficiency (%)

100

0.1 1

Efficiency v I

V =3.3V.

OUT

I (A)

OUT

V =5V

V =12V

Efficiency (%)

5V -18V Input, 5V/3A Output, P Phase, High Efficiency SimpleSync

Converter 200kHz

ZXRD1033PQ16

ZXRD1050PQ16

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 17

Ref Value Part Number Manufacturer Comments

IC1 ZXRD1050PQ16 Zetex QSOP16 Controller IC P1

>12V

<12V

ZXM64P03X ZXM64P02X

Zetex MSOP8 Low R

DS(ON)

P MOSFET 30V V

20V VDS

N1 ZXM6 4NO3X Z etex MSOP8 Low R

DS(ON)

MOSFET

D1 1A 0.5V V

ZHCS1000 Zetex Schot tky Diode 1A R1 100k WCR0805-100k Welwyn/IRC 0805 Size R2 680⍀ WCR0805-680 Welwyn/IRC 0805 Size R3 24k WCR0805-24k Welwyn/IRC 0805 Size *R3 3k WCR0805-3k Welwyn/IRC 0805 Size *Rx 2.7K WCR0805-2.7k Welwyn/IRC 0805 Size R

SENSE

0.015⍀ LR1206R015 Welwyn/IRC Current Limit Sense Resistor

OR OR

68␮F 68␮F 68␮F

TPSV686M025R0150

20SA68M

20SV68M

AVX Sanyo OS-CON Sanyo OS-CON

68␮F 25V ’E’ low ESR 68␮F 20V PTH low ESR 68␮F 20V SMT low ESR

OUT

OR OR

470␮F *150␮F *120␮F

TPSE477M010R0200

6SA150M

6SV120M

AVX Sanyo OS-CON Sanyo OS-CON

470␮F 10V ’E’ low ESR 150␮F 6V PTH low ESR 120␮f 6V SMT low ESR

OUT

680␮F x 2 6CV68 0GX Sanyo 680␮F 6V SMT Bulk Capacitor

C1 1␮ FGeneric

1µF,2 0V.X7R Di electri c

C2 1␮ FGeneric

1µF,4 V.X7R Die lectric C3 330pF Generic 330pF,4V.X7R Dielectri c C4 1␮ FGeneric

1µF,2 0V.X7R Di electri c C5 1␮ FGeneric

1µF,2 0V.X7R Di electri c C6 1␮ FGeneric

1µF,4 V.X7R Die lectric C7 22␮FGeneric

22µF,4V.X7R Dielectric C8 2.2␮FGeneric

2.2µF,20V.X7R Dielectric

C9 1␮ FGeneric

1µF,2 0V.X7R Di electri c *Cx1 0.022␮FGeneric

0.022µF,4V.X7R Dielectric *Cx2 10nF Generic 10nF,20V.X7R Dielectric L1

15␮H 10␮H

CDRH127B-OWZ9 6001

Sumida C&D Technologies (NCL)

Low Profile SMT Low Profile SMT

Fx 2785044447 FairRite SMT Ferrite Bead

* see Optimising for Transient Response Section

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 18

Low input flag

5.0-18V

Shut Down

C3C2

5.0V 3A

Bootstrap

GNDG

PWR

SET

Decoup

SENSE+

SENSE -

F B

LBF

SHDN

INT

Delay

Comp

DRIVE

8 16 15

6 5

OUT

SENSE

IC1

100

0.1 1 10

Efficiency v I

V =3.3V.

OUT

I (A)

OUT

V =5V

V =12V

Efficiency (%)

5V -18V Input, 5V/3A Output, P Phase, High Efficiency Non-synchronous Step Down Converter 200kHz

100

0.1 1 10

Efficiency v I

V =5V.

OUT

I (A)

OUT

V =7V

V =12V

Efficiency (%)

ZXRD1033PQ16

ZXRD1050PQ16

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 19

Ref Value Part Number Manufacturer Comments

IC1 ZXRD1050PQ16 Zetex QSOP16 Controller IC P1

>12V

<12V

ZXM64P03X ZXM64P02X

Zetex MSOP8 Low R

DS(ON)

P MOSFET 30V V

20V VDS

D1 5A 0.5V V

50WQ04FN IR Schottky Diode 5A R1 100k WCR0805-100k Welwyn/IRC 0805 Size R2 680⍀ WCR0805-680 Welwyn/IRC 0805 Size R3 24k WCR0805-24k Welwyn/IRC 0805 Size *R3 3k WCR0805-3k Welwyn/IRC 0805 Size *Rx 2.7k WCR0805-2.7k Welwyn/IRC 0805 Size R

SENSE

0.015⍀ LR1206R015 Welwyn/IRC Current Limit Sense Resistor

OR OR

68␮F 68␮F 68␮F

TPSV686M025R0150

20SA68M

20SV68M

AVX Sanyo OS-CON Sanyo OS-CON

68␮F 25V ’E’ low ESR 68␮F 20V PTH low ESR 68␮F 20V SMT low ESR

OUT

OR OR

470␮F *150␮F *120␮F

TPSE477M010R0200

6SA150M

6SV120M

AVX Sanyo OS-CON Sanyo OS-CON

470␮F 10V ’E’ low ESR 150␮F 6V PTH low ESR 120␮f 6V SMT low ESR

OUT

680␮F x 2 6CV68 0GX Sanyo 680␮F 6V SMT Bulk Capacitor

C1 1␮ FGeneric

1µF,2 0V.X7R Di electri c

C2 1␮ FGeneric

1µF,4 V.X7R Die lectric C3 330pF Generic 330pF,4V.X7R Dielectri c C4 1␮ FGeneric

1µF,2 0V.X7R Di electri c C5 1␮ FGeneric

1µF,2 0V.X7R Di electri c C6 1␮ FGeneric

1µF,4 V.X7R Die lectric C7 22␮FGeneric

22µF,4V.X7R Dielectric C8 2.2␮FGeneric

2.2µF,20V.X7R Dielectric

C9 1␮ FGeneric

1µF,2 0V.X7R Di electri c *Cx1 0.022␮FGeneric

0.022µF,4V.X7R Dielectric *Cx2 10nF Generic 10nF,20V.X7R Dielectric L1 15␮H

15␮H

CDRH127-150MC D05022P-153

Sumida SMT Coilcraft

Low Profile SMT Low Profile SMT

* see Optimising for Transient Response Section

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 20

Designing with the ZXRD and Dynamic Performance

This section refers to the reference design for the 3.3V, 4A output N channel synchronous converter. This is as shown previously in the Optimising for transient response section of the application s information (page

10). This circuit is also representative of the ZXRD evaluation board (see ordering information).

The ZXRD series has been designed to give the best in terms of all round flexibility allowing engineers to either use the reference design as is, or to tailor the design to the individual requirements. This section demonstrates the performance features of the ZXRD series and its associated components.

Efficiency

Efficiency is often quoted as one of the key parameter s of a DC-DC converter. Not only does it give an instantaneous idea of heat dissipation, but also an idea as to the extent battery life can be extended in say portable applications. Fig.1 show s the efficiency of the standard application circuit. Efficiency vs Output current is shown for the 5 to 3.3V configuration.

Startup

Startup is always important in DC-DC converter applications. Magnetics have large inrush current requirements. For higher current applications using large input and output capacitors the startup current can be quite significant. This can cau s e sever al pr ob lem s.

In many applications the power supply to the DC-DC converter can be affected. Particularly in battery powered applications, trying to take large steps in load current out of the supply can result in either current limitation (by the internal impedance of the battery), or it can actually damage the battery.

For the converter itself, large changes in load current can result in false triggering of the RSENSE circuit. This could result in device hiccup (see applications section).

The ZXRD programmable soft start function eliminates both these problems. This is very clear to see in operation if the main switching waveforms ar e examined.

The soft start is programmed by the combination of resistor and capacitor R3 and C7. As a recommendation, R3 and C7 are set to 3k and 22µF respectively, which limits the peak startup current appropriately in the reference circuit. Fig.2 shows the startup waveforms. V

and V

OUT

are plotted against time

Efficiency v I

V =3.3V.

OUT

100

0.1 1 10

I (A)

OUT

V =5V

Efficiency (%)

Fig.1. 5-3.3V Efficiency to 4A

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 21

SimpleSyncTM and Shoot-Through

Steady state operation under constant load gives an excellent indication of the ZXRD series performance and also demonstrates how well SimpleSync

works. The SimpleSync

technique drives the sync hronous MOSFET gate using the overwinding on the main inductor. It also uses the high speed suppression characteristics of the ferrite bead to prevent shoot through currents. Fig.3 shows the gate waveforms for the main and synchronous MOSFET devices (Zetex ZXM64N02X).

Fig3. Main & Synchronous gate waveforms

Output Voltage Ripple

Output voltage ripple is shown in Fig.4 and Fig. 5 for load currents of 0.5A and 4A respectively. Output voltage ripple will be d ependant, to a ver y large extent, on the output capacitor ESR. (see Applications S ec t ion for ripple cal culation).

Fig.4 0.5A Main & V

OUT

Waveforms

Fig.5 4A Main & V

OUT

Waveforms

Fig.2. Startup Waveform for 3.3V output .

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 22

Line regulation

Variation in input voltage for both these conditions (0.5A and 4A output) shows the excellent line regulation the ZXRD. Fig.6 shows that with 0.5A and 4A output currents, applying an increase in input voltage from 5V to 10V , results in only sm all chang es in output regulation.

Fig.6a Line Regulation 0.5A load

Fig.6b Line Regulation 4A load

Transient Response

Transient response to changes in load is becoming an increasingly critical feature of many con verter circuits. Many high speed processors make very large step changes in their load requirements, at the same time as having more stringent specifications in terms of overshoot and undershoot. Fig.7 demonstrates the excellent load transient performance of the ZXRD series. A step change using an electronic load from 1A to 3A is shown w ith corr espondin g output transi ent performance.

Fig.7 Output Transient Response

Non-synchronous Applications

One of the key features of the ZXRD series, when combined with the SimpleSync

techniqu e, i s the flexibility in allowing engineers to choose either a synchronous or non-synchronous architecture.

Making the design non-synchronous by removing MOSFET N2 (the synchronous device), replacing the ZHCS1000 with a high current diode (50WQ04FN) and using a 2 terminal inductor, such as the Sum ida CDRH127-150MC, decreases cost slightly at the expense of a few efficiency points. Fig.8 shows the effect on the efficiency of the 5 to 3.3V 4A application when the design is made no n- s ynchronous.

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 23

Using ’P’ Channel Devices (No Bootstrap)

All the preceeding examples utilise N channel MOSFET devices and a bootstrap circuit to pr ovide full enhancement to the high side device. These circuits have a maximum input voltage of 10V. For applications requiring a higher input voltage, using P channel devices for the main M OSFET will allow up to 18V operation. Typically this may be in a 12V to 5V converter circuit.

If the same package size MOSFET devices are used, it is likely a higher on resistance will be encountered, with the result that efficiency will decline slightly. Fig 9 shows the efficiency plot for a P phase synchronous 5V converter based on the ZXRD1050PQ16. The figure charts efficiency v output current at 12V input and 7V input.

100

0.1 1 10

Efficiency v I

V =3.3V.

OUT

I(A)

OUT

V =5V

Efficiency (%)

Fig.9 ’P’ Channel Device Efficiency (synchronous)

100

0.1 1 10

Efficiency v I

V =5V.

OUT

I (A)

OUT

V =7V

V =12V

Efficiency (%)

Fig.8 Efficiency for non-synchronous 5-3.3V conversion

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 24

ISSUE 4 - OCTOBER 2000

N channel devices offer high efficiency performance fo r switching applications.

This family of MOSFETs from Zetex offers a combination of low on-resistance and low gate charge, providing optimum performance and high efficiency for switching applications such as DC - DC conversion.

On resistance is low across the family, from only 40mΩ (max) for the ZXM64N02X part up to 180mΩ (max) for the ZXM61N02F. This means that on-state losses are minimised, imp roving effici ency in low fr equency dri ve applications. Threshold voltages of 0.7V and 1V minimum allow the MOSFETs to be driven from low voltage sources.

To minimise switching losses, and hence increase the efficiency of high frequency operation, gate charg e (Qg) is small. The maximum Qg varies from 3.4nC to 16nC depending on which device is chosen. C

rss

(Miller capacitance) is also low, e.g. typically 30pF for the ZXM6203E6 device. This results in better efficiency in high frequency applications.

P channel MOSFETs excel in load switching applications.

The P-channel MOSFETs offer highly efficient performance for low voltage load switching applications. This helps increase battery life in portable equipment.

Minimum threshold voltage is low, only 0.7V or 1V, enabling the MOSFETs to provide optimum performance from a low vol tage sour ce. To ensur e the device suitability for low voltage applications, drain to source voltage is specified at 20V or 30V.

To minimise on-s tate l osses , an d im pr ove eff iciency in in low frequency drive applications, the on-resistance (R

DS(ON)

) is low across the range. For example, the

ZXM64P03X has an R

DS(ON)

of only 100mΩ at a gate to

source voltage of 4.5V. Gate source charge is also low, easing req uirements for

the gate driver. Maximum values range from 0.62nC for the ZXM61P03F, up to 9nC for the ZXM64P03X.

Small outline surface mount packaging

The products have been designed to optimise the performance of a range of packages. The parts are offered in SOT23, SOT23-6 and MSOP8 packages. The MSOP8 enables single or dual devices to be offered. The MSOP8 is also half the size of competitive SO8 devices and 20% smaller than TSSOP8 alternatives.

Product performance

The following performance characteristics show the capabilities of the ZXM64N02X. This device is recommended for use with certain configurations of the ZXRD DCDC controller circuit.

ZXCM6 Series

Low voltage MOSFETs

Unique structure gives optimum performance for switching applications.

ZXRD1000 SERIES

Page 25

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stat ed).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

(BR)DSS

20 V

=250µA, VGS=0V

Zero Gate Voltage Drain Current I

DSS

µA

VDS=20V, VGS=0V

Gate-Body Leakage I

GSS

100 nA

=± 12V,

=0V

Gate-Source Threshold Voltage V

GS(th)

0.7 V

=250µA, VDS=

Static Drain-Source On-State Resistan ce (1)

DS(on)

0.040

0.050

Ω Ω

VGS=4.5V, ID=3.8A V

=2.7V, ID=1.9A

Forward Transconductance (3) g

6.1 S VDS=10V,ID=1.9A

DYNAMIC (3)

Input Capacitance C

iss

1100 pF

=15 V,

=0V, f=1MHz

Output Capacitance C

oss

350 pF

Reverse Transfer Capacitance C

rss

100 pF

SWITCHING(2) (3)

Turn-On Delay Time t

d(on)

5.7 ns V

=10V, ID=3.8A

=6.2Ω, RD=2.6Ω (Refer to test circuit)

Rise Tim e t

9.6 ns

Turn-Off Delay Time t

d(off)

28.3 ns

Fall Time t

11.6 ns

Total Gate Charge Q

16 nC

=16V,VGS=4.5V

, I

=3.8A (Refer to test circuit)

Gate-Source Charge Q

3.5 n C

Gate Drain Charge Q

5.4 n C

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

0.95 V Tj=25°C, IS=3.8A, V

=0V

Reverse Recov ery T ime (3 ) t

23.7 ns Tj=25°C, IF=3.8A, di/dt= 100A/µs

Reverse Recov ery Ch arge (3) Q

13.3 nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to product ion testing.

Performance Characterisa tion of ZXM64N02X

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 26

208221 b8066

GERMANY ASIA USA UK

Zetex

Zetex GmbH Munich

Zetex Asia Hong Kong

Zetex Inc Long Island NY

Zetex PLC Chadderton,

Oldham (49) 894549490 (852) 2610 0611 (1) 631 543 7100 (44) 161 622 4444 http://www.zetex.com

Sumida

Sumida Electric HK (852) 2880 6688

Sumida Electric USA (CHICAGO Head Office)

Ole Wolf

Electronics Ltd.

Taiwan Sumida Electric (886) 2762 2177

(1) 847 956-0666 (44) 1525 290755

http://www.japanlink.com/sumida/

FairRite

Schaffner Electronik GmbH (49) 721569 10

Fair Rite Asia Pte Ltd Singapore (65) 281 196 9 Japan/Korea (81) 332255 055

FairRite Products Corp (1) 914 895 2055

Schaffner EMC Ltd

(44) 118 977 0070

AVX

AVX Asia Singapore (65) 258 283 3

AVX USA (1) 843 448 9411

AVX UK

(44) 1252 770000

http://www.avxcorp.com

Welwyn , IR C

Welwyn Electronics GmbH (49)871 973 760

TTC Group plc Singapore (65) 536 516 67

IRC Inc (1) 512 992 7900

Welwyn

Components Ltd

(44) 1670 822181 http://welwyn-tt.co.uk

Coilcraft

Coilcraft Inc (1) 847 639 6400

Coilcraft Europe

(44) 1236 730595 http://www.coilcraft.com

Sanyo Electronic Comp. (OS-CON)

Sanyo Europe Munich (49) 89 4576 93 16

SANYO Electronics Ltd. Hong Kong (852) 21936888 Singapore (65) 281 322 6 Japan (81) 720 70 6 306

SANYO Electronics Ltd. Forrest City, AR 870 633 5030 San Diego, CA 619 661 6835 Rochelle Pk, NJ 201 843 8100

Semicon UK Ltd

(44) 1279 422224

http://www.sanyovideo.com

C & D Technologies (NCL)

Contact C & D Technologies (NCL) UK

C & D Technologies Guangzhou, Guangdong, PRC (86) 208221 8066

C & D Technologies (NCL) 5816 Creedmoor Road, Raleigh North Carolina 27612 (1) 919 571 9405

C & D

Technologies

(NCL)

Tanners Drive

Blakelands North

Milton Keynes

MK14 5BU

(44) 1908 615232

http://www.dc-dc.com

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Page 27

Bootstrap

DRIVE

PWRG

INT

SENSE +

SENSE -

SHDN

Delay V

Comp

Decoup

LBF

SET

PIN No.1

IDENTIFICA TION RECESS FOR PIN 1

DIM Millimetres Inches

MIN MAX MIN MAX A 4.80 4.98 0.189 0.196 B 0.635 0.025 NOM C 0.177 0.267 0.007 0.011 D 0.20 0.30 0.008 0.012 E 3.81 3.99 0.15 0.157 F 1.35 1.75 0.053 0.069 G 0.10 0.25 0.004 0.01 J 5.79 6.20 0.228 0.244 K0° 8° 0° 8°

Connection Diagram

Package Dimensions

Note: Connection diagram is the same for N and P Phase, adjustable and

fixed controllers. The V

pin has a different function between

adjustable and fixed versions.

ZXRD1000 SERIES

ISSUE 4 - OCTOBER 2000

Page 28

Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by Streitfeldstraße 19 47 Mall Drive, Unit 4 3701-04 Metroplaza, Tower 1 agents and distributors in D-81673 Mü nchen Commack NY 11725 Hing Fong Road, major countries world-wide Germany USA Kwai Fong, Hong Kon g Zetex plc 2001 Telefon: (49) 89 45 49 49 0 Telephone: (631) 543-7100 Telephone:(852) 26100 611 Fax: (49) 89 45 49 49 49 Fax: (631 ) 86 4- 76 30 Fax: (852) 24 250 494 http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form par t of any or de r or contract or be regard ed as a rep re sen ta ti o n re lat i ng to th e pr od uct s or ser vi ces con cer ne d. The Company reserves the right to alter without no tice the specification, design, price or conditions of supply of any product or service.

Ordering Information

Device Description T&R Suffix Partmarking

ZXRD1033NQ16 3.3V Fixed controller N main switch TA, TC ZX RD1033N ZXRD1050NQ16 5.0V Fixed controller N main switch TA, TC ZX RD1050N ZXRD100ANQ16 Adjustable controller N main switch TA, TC ZXRD100AN ZXRD1033PQ16 3.3V Fixed controller P main switch TA, TC ZXRD1033P ZXRD1050PQ16 5.0V Fixed controller P main switch TA, TC ZXRD1050P ZXRD100APQ16 Adjustable controller P main switch TA, TC ZXRD100AP

’N main switch’ indicates controller for use with N channel main switch element. ’P main switch’ indicates controller for use with P channel main switch element.

TA= Tape and Reel quantity of 500 TC= Tape and Reel quantity of 2500

Demonstrat ion Boards

These can be requested through you r lo cal Zetex office or representative. These bo ard s can b e tai lored to yo ur specific needs. If you would like to obtain a demo board then a request form is available to help determ ine your exact requirement.

ISSUE 4 - OCTOBER 2000

ZXRD1000 SERIES

Datasheet ZXRD100ANQ16TA, ZXRD100ANQ16TC, ZXRD100APQ16TA, ZXRD100APQ16TC, ZXRD1033NQ16TA Datasheet (Zetex)

Specifications and Main Features

Frequently Asked Questions

User Manual