Datasheet ZXMP6A17DN8 Datasheet (ZETEX)

查询ZXMP6A17DN8TA供应商

DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

= -60V; R

DESCRIPTION

This new generation of high cell density planar MOSFETs from Zetex utilizes a
unique structure that combines the benefits of low on-resistance with fast
switching speed. Thismakes them ideal forhighefficiency, low voltage, power
management applications.

= 0.125 ;ID= -3.1A

DS(ON)

ZXMP6A17DN8

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

•

APPLICATIONS

•

DC-DC Converters

•

Power Management functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL TAPE

ZXMP6A17DN8TA 7
ZXMP6A17DN8TC 13’‘ 12mm 2500 units

WIDTH

’‘ 12mm 500 units

QUANTITY

PER REEL

DEVICE MARKING

ZXMP
6A17D

SO8

PINOUT

PROVISIONAL ISSUE A - SEPTEMBER 2002

Top view

1

ZXMP6A17DN8

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current@V

=10V; TA=25⬚C (b)(d)

GS

@V

=10V; TA=70⬚C (b)(d)

GS

@V

=10V; TA=25⬚C (a)(d)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)(d)

I

P

DSS

GS

D

DM

S

SM

D

Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)

P

D

Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)

P

D

Linear Derating Factor
Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R
Junction to Ambient (b)(e) R
Junction to Ambient (b)(d) R

Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.

θJA

θJA

θJA

-60 V

⫾20 V

-3.1

-2.4

-2.3

-11.1 A

-3.0 A

-11.1 A

1.25
10

mW/°C

1.81

14.5

mW/°C

2.15
17

mW/°C

-55 to +150 °C

100 °C/W

70 °C/W
60 °C/W

A
A
A

W

W

W

PROVISIONAL ISSUE A - SEPTEMBER 2002

2

CHARACTERISTICS

ZXMP6A17DN8

R

DS(on)

10

Limit ed

1

DC

100m

Drain Current (A)

10m

D

-I

1s

100ms

Singl e Pulse

T

=25°C

amb

Oneactivedie

1 10 100

10ms

1ms

100µs

-VDSDrai n-Source Volt age (V)

Safe Operating Area

110
100

Thermal Resistance (°C/W)

T

=25°C

amb

Oneactivedie

90
80
70

D=0. 5

60
50
40

D=0. 2

30
20
10

0

100µ 1m 10m 100m 1 10 100 1k

Singl e Pulse

D=0.05

D=0. 1

Pulse Width (s)

Transient Thermal Impedance

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

Oneactivedie

0.4

0.2

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

Temperature (°C)

Twoactivedie

Derating Curve

Singl e Pulse

=25°C

T

100

10

1

Max i mu m P ow er ( W)

100µ 1m 10m 100m 1 10 100 1k

amb

Oneactivedie

Pulse Width (s)

Pulse Power Dissipation

PROVISIONAL ISSUE A - SEPTEMBER 2002

3

ZXMP6A17DN8

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance

(1)
Forward Transconductance (1)(3) g

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

-60 V

I

=-250µA, VGS=0V

D

-1.0 ␮AVDS=-60V, VGS=0V
100 nA VGS=⫾20V, VDS=0V

-0.8 V ID=-250␮A, VDS=V

0.125

0.190

V

⍀
⍀

=-10V, ID=-2.2A

GS

V

=-4.5V, ID=-1.8A

GS

4.9 S VDS=-15V,ID=-2.2A

DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

iss

oss

rss

670 pF

46.7 pF

28.0 pF

=-30 V, VGS=0V,

V

DS

f=1MHz

SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

d(on)

r

d(off)

f

g

g

gs

gd

1.9 ns

22.4 ns

20.0 ns

V

=-30V, ID=-1A

DD

R

@

6.0Ω,VGS=-10V

G

16.0 ns

7.3 nC VDS=-30V,VGS=-5V,
I

=-2.2A

D

15.1 nC

1.8 nC

1.9 nC

V

=-30V,VGS=-10V,

DS

I

=-2.2A

D

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

SD

rr

rr

-0.85 -0.95 V TJ=25°C, IS=-2A,
V

=0V

GS

26.4 ns TJ=25°C, IF=-1.7A,

32.7 nC

di/dt= 100A/µs

GS

PROVISIONAL ISSUE A - SEPTEMBER 2002

4

TYPICAL CHARACTERISTICS

ZXMP6A17DN8

10V

4.5V

3.5V
3V

2.5V

-V

2V

GS

Drain Current (A)

-I

T = 25°C

10

1

0.1

D

0.01

0.1 1 10

-VDSDrai n-Source Voltage (V)

Output Characteristics

10

T = 150°C

1

T = 25°C

Drain Current (A)

0.1

D

-I

-VDS= 10V

12345

-VGSGate-Source Voltage(V)

Typical Transfer Characteristics

T = 150°C

10V

10

1

0.1

Drain Current (A)

D

-I

0.01

0.1 1 10

-VDSDrai n-Source Voltage (V)

Output Characteristics

2.0

1.8

GS( t h)

1.6

1.4

and V

1.2

DS(on)

1.0

0.8

0.6

NormalisedR

0.4

-50 0 50 100 150

Tj Juncti on Temperature (°C)

VGS= - 10V
I

= - 0. 9A

D

VGS=V

DS

ID= - 250uA

Normalised Curves v Temperature

4.5V

3.5V

R

V

3V

2.5V

1.5V

DS(on)

GS(th)

2V

-V

GS

2V

-V

GS

10

T = 25°C

2.5V

3V

1

Drain-Source On-Resistance (Ω)

0.1

0.1 1 10

DS(on)

R

-IDDrain Current (A)

On-Resistance v Drain Current

PROVISIONAL ISSUE A - SEPTEMBER 2002

3.5V

4.5V
10V

10

T = 150°C

1

0.1

T = 25°C

Reverse Drain Current (A)

SD

-I

0.01

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-VSDSource-DrainVoltage(V)

Source-Drain Diode Forward Voltage

5

ZXMP6A17DN8

TYPICAL CHARACTERISTICS

1000

900
800
700
600
500
400
300
200

C Capacitance (pF)

100

0

0.1 1 10

C

ISS

C

OSS

-VDS-Drain-SourceVoltage(V)

VGS=0V
f=1MHz

C

RSS

10

ID= - 2.2A

8

6

4

2

Gate-Source Voltage (V)

0

GS

0 2 4 6 8 10 12 14 16

-V

Q - Cha rge ( nC)

VDS= - 30V

Gate-Source Voltage v Gate ChargeCapacitance v Drain-Source Voltage

PROVISIONAL ISSUE A - SEPTEMBER 2002

6

ZXMP6A17DN8

PACKAGE DIMENSIONSPACKAGE OUTLINE

CONTROLLING DIMENSIONS ARE IN INCHES

APPROX IN MILLIMETRES

DIM

INCHES MILLIMETRES

MIN MAX MIN MAX

A 0.053 0.069 1.35 1.75

A1 0.004 0.010 0.10 0.25

D 0.189 0.197 4.80 5.00

H 0.228 0.244 5.80 6.20

E 0.150 0.157 3.80 4.00

L 0.016 0.050 0.40 1.27

e 0.050 BSC 1.27 BSC

b 0.013 0.020 0.33 0.51

c 0.008 0.010 0.19 0.25

⍜ 0⬚ 8⬚ 0⬚ 8⬚

h 0.010 0.020 0.25 0.50

© Zetex plc 2002

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PROVISIONAL ISSUE A - SEPTEMBER 2002

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