Datasheet ZXMP2120E5 Datasheet (Zetex) [ru]

200V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

(BR)DSS

=-200V; R

V

DESCRIPTION

This 200V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.

= 28 ; ID= -122mA

DS(ON)

ZXMP2120E5

A 4 pin SOT223 version is also available (ZXMP2120G4).

FEATURES

High voltage

•

Low on-resistance

•

Fast switching speed

•

Low gate drive

•

•

Low threshold

•

SOT23-5 package variant engineered to increase spacing between
high voltage pins.

APPLICATIONS

•

Active clamping of primary side MOSFETs in 48 volt DC-DC converters

ORDERING INFORMATION

DEVICE REEL SIZE

ZXMP2120E5TA 7 8mm embossed 3,000 units

DEVICE MARKING

•

P120

(inches)

TAPE WIDTH (mm) QUANTITY

PER REEL

SOT23-5

N/C

D

N/C

PINOUT - TOP VIEW

S

G

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ZXMP2120E5

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

V

(a)

I

I

I

P

DSS

GS

D

DM

SM

D

Drain-Source Voltage

Gate Source Voltage V

Continuous Drain Current (V

=10V; T

GS

amb

=25°C)

Pulsed Drain Current (c)

Pulsed Source Current (Body Diode)

Power Dissipation at T

amb

=25°C

(c)

(a)

Linear Derating Factor

Operating and Storage Temperature Range T

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.

(a)

R

θJA

-200 V

±20

-122 mA

-0.7 A

-0.7 A

0.75

6

W

mW/°C

-55 to +150 °C

167 °C/W

V

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ZXMP2120E5

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Gate-Source Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current

Static Drain-Source On-State Resistance

Forward Transconductance

(1)

(1)

(1)(2)

(BR)DSS

GS(th)

GSS

DSS

I

D(on)

R

DS(on)

g

fs

-200 V ID=-1mA, VGS=0V

-1.5 -3.5 V ID=-1mA, VDS=V

20 nA VGS= ⫾20V, VDS=0V

-10

-100␮AµA

VDS=-200 V, VGS=0
V

=-160 V, VGS=0V,

DS

T=125°C

(2)

-300 mA VDS=-25 V, VGS=-10V

28

VGS=-10V, ID=-150mA

Ω

50 mS VDS=-25V,ID=-150mA

DYNAMIC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

(2)

(2)

(2)

C

iss

C

oss

C

rss

100 pF

25 pF

7pF

V

=-25 V, VGS=0V,

DS

f=1MHz

SWITCHING

Turn-On Delay Time

Rise Time

(2)(3)

Turn-Off Delay Time

Fall Time

NOTES:

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.

(2)(3)

(2) (3)

(2) (3)

t

d(on)

t

r

t

d(off)

t

f

7ns

15 ns

12 ns

15 ns

V

=-25V, ID=-150mA

DD

GS

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ZXMP2120E5

TYPICAL CHARACTERISTICS

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CHARACTERISTICS

ZXMP2120E5

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ZXMP2120E5

PACKAGE OUTLINE

PAD LAYOUT DETAILS

0.95

0.375

2.2

0.087

0.65

0.025

Controlling dimensions are in millimeters. Approximate conversions are given in inches

PACKAGE DIMENSIONS

DIM

Millimeters Inches

MIN. MAX. MIN. MAX.

A 0.90 1.45 0.0354 0.0570

A1 - 0.15 - 0.0059

A2 0.90 1.30 0.0354 0.0511

b 0.20 0.50 0.0078 0.0196

C 0.09 0.26 0.0035 0.0102

D 2.70 3.10 0.1062 0.1220

DIM

E 2.20 3.20 0.0866 0.1181

E1 1.30 1.80 0.0511 0.0708

e 0.95 REF 0.0374 REF

e1 1.90 REF 0.0748 REF

L 0.10 0.60 0.0039 0.0236

a 0° 30° 0° 30°

Millimeters Inches

MIN. MAX. MIN. MAX.

1.06

0.042

mm

inches

© Zetex Semiconductors plc 2006

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