Datasheet ZXMN6A11GFTA, ZXMN6A11GFTC Datasheet (Zetex)

60V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN6A11G

SUMMARY
V

(BR)DSS

= 60V; R

= 0.14 ID= 3.8A

DS(ON)

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT223 package

•

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Relay and Solenoid driving

•

Motor control

SOT223

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN6A11GFTA 7” 12mm 1000 units

ZXMN6A11GFTC 13” 12mm 4000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMN
6A11

ISSUE 1 - MARCH 2002

Top View

1

ZXMN6A11G

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C(b)

VGS=10V; TA=70°C(b)

VGS=10V; TA=25°C(a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)

Linear Derating Factor
Power Dissipation at TA=25°C (b)

Linear Derating Factor
Operating and Storage Temperature Range Tj:T

THERMAL RESISTANCE

I

D

DM
S
SM

P

P

DSS
GS

D

D

stg

60 V

20 V

3.8

3.0

2.7
10 A

5A

10 A

2.0
16

3.9
31

-55 to +150 °C

mW/°C

mW/°C

A

W

W

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)

Junction to Ambient (b)

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10␮s - pulse width limited by maximum junction temperature.

R

R

θJA

θJA

62.5 °C/W

32 °C/W

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CHARACTERISTICS

ZXMN6A11G

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3

ZXMN6A11G

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance (1)
Forward Transconductance (3) g
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

SD

rr

rr

60 V ID=250␮A, VGS=0V

1 ␮AVDS=60V, VGS=0V

100 nA

1.0 V ID=250␮A, VDS=V

0.140

0.250

4.9 S VDS=15V,ID=2.5A

330 pF

35.2 pF

17.1 pF

1.95 ns

3.5 ns

8.2 ns

4.6 ns

3.0 nC VDS=15V, VGS=5V,

5.7 nC

1.25 nC

0.86 nC

0.85 0.95 V TJ=25°C, IS=2.8A,

21.5 ns TJ=25°C, IF=2.5A,

20.5 nC

VGS=±20V, VDS=0V

VGS=10V, ID=4.4A

⍀

VGS=4.5V, ID=3.8A

⍀

VDS=40V,VGS=0V,
f=1MHz

VDD=30V, ID=2.5A
RG=6.0⍀,VGS=10V
(refer to test circuit)

ID=2.5A

VDS=15V,VGS=10V,

=2.5A

I

D

(refer to test circuit)

VGS=0V

di/dt= 100A/µs

GS

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TYPICAL CHARACTERISTICS

ZXMN6A11G

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ZXMN6A11G

TYPICAL CHARACTERISTICS

ISSUE 1 - MARCH 2002

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ZXMN6A11G

PACKAGE OUTLINE

PACKAGE DIMENSIONS

MILLIMETRES

DIM

MIN MAX MIN MAX

A ᎏ 1.80 D 6.30 6.70

A1 0.02 0.10 e 2.30 BASIC

A2 1.55 1.65 e1 4.60 BASIC

b 0.66 0.84 E 6.70 7.30

b2 2.90 3.10 E1 3.30 3.70

C 0.23 0.33 L 0.90 ᎏ

MILLIMETRES

DIM

PAD LAYOUT DETAILS

4.6

2.3

6.8

3.8 min

2.0 min

(3x)

1.5 min
(3x)

2.0 min

© Zetex plc 2002

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ISSUE 1 - MARCH 2002

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