Datasheet ZXMN6A11DN8TA, ZXMN6A11DN8TC Datasheet (Zetex)

60V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN6A11DN8

SUMMARY
V

(BR)DSS

= 60V; R

= 0.14 ID= 2.7A

DS(ON)

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SO8 package

•

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Disconnect switches

•

Motor control

SO8

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN6A11DN8TA 7” 12mm 500 units

ZXMN6A11DN8TC 13” 12mm 2500 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMN
6A11D

ISSUE 1 - MARCH 2002

Top View

1

ZXMN6A11DN8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C(b)

VGS=10V; TA=70°C(b)

VGS=10V; TA=25°C(a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)(d)

Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)

Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)

Linear Derating Factor
Operating and Storage Temperature Range Tj:T

THERMAL RESISTANCE

I

D

DM
S
SM

P

P

P

DSS
GS

D

D

D

stg

60 V

⫾20 V

2.7

2.2

2.1

8.3 A

3.2 A

8.3 A

1.25
10

1.8
14

2.1
17

-55 to +150 °C

mW

mW/°C

mW

mW/°C

mW

mW/°C

A

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d)

Junction to Ambient (a)(e)

Junction to Ambient (b)(d)

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For device with one active die
(e) For device with two active die running at equal power.

R

R

R

θJA

θJA

θJA

100 °C/W

70 °C/W

60 °C/W

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CHARACTERISTICS

ZXMN6A11DN8

ISSUE 1 - MARCH 2002

3

ZXMN6A11DN8

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance (1)
Forward Transconductance (3) g
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

SD

rr

rr

60 V

1 ␮AVDS=60V, VGS=0V

100 nA VGS=⫾20V, VDS=0V

1.0 V ID=250␮A, VDS=V

0.14

0.25

4.9 S VDS=15V,ID=2.5A

330 pF

35.0 pF

17.0 pF

1.95 ns

3.5 ns

8.2 ns

4.6 ns

3.0 nC VDS=15V, VGS=5V,

5.7 nC VDS=15V,VGS=10V,

1.25 nC

0.86 nC

0.85 0.95 V TJ=25°C, IS=2.8A,

21.5 ns TJ=25°C, IF=2.5A,

20.5 nC

ID=250µA, VGS=0V

VGS=10V, ID=4.4A

⍀

VGS=4.5V, ID=3.8A

⍀

VDS=40V,VGS=0V,
f=1MHz

VDD=15V, ID=2.5A
RG=6.0⍀,VGS=10V
(refer to test circuit)

ID=2.5A

=2.5A

I

D

(refer to test circuit)

VGS=0V

di/dt= 100A/µs

GS

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TYPICAL CHARACTERISTICS

ZXMN6A11DN8

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ZXMN6A11DN8

TYPICAL CHARACTERISTICS

ISSUE 1 - MARCH 2002

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ZXMN6A11DN8

PACKAGE DIMENSIONSPACKAGE OUTLINE

DIM

INCHES

MIN MAX

A 0.053 0.069

A1 0.004 0.010

D 0.189 0.197

H 0.228 0.244

E 0.150 0.157

L 0.016 0.050

e 0.050 BSC

b 0.013 0.020

c 0.008 0.010

⍜ 0⬚ 8⬚

h 0.010 0.020

© Zetex plc 2002

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ISSUE 1 - MARCH 2002

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