Datasheet ZXMN6A09K Datasheet (ZETEX)

ZXMN6A09K

60V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK

SUMMARY
V

(BR)DSS

=60V : R

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage power
management applications.

=0.045 ; ID=11.2A

DS(on)

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

• D-Pak (T0-252) package

APPLICATIONS

•

DC-DC Converters

•

Power Management functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN6A09KTC 13” 16mm 2500 units

TAPE

WIDTH

QUANTITY PER

REEL

DEVICE MARKING

•

ZXMN
6A09K

K

A

P

D

PINOUT

ISSUE 4 - JANUARY 2005

TOP VIEW

1

SEMICONDUCTORS

ZXMN6A09K

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V
Gate-source voltage V
Continuous drain current @ V

=10V; TA=25°C

GS

@VGS=10V; TA=70°C
@VGS=10V; TA=25°C

Pulsed drain current

(c)

Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T

=25°C

A

(c)

(a)

(b)
(b)
(a)

(b)

I

I
I
I
P

DSS

GS

D

DM

S

SM

D

Linear derating factor
Power dissipation at T

=25°C

A

(b)

P

D

Linear derating factor
Power dissipation at T

=25°C

A

(d)

P

D

Linear derating factor
Operating and storage temperature range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to ambient
Junction to ambient
Junction to ambient

(a)

(b)

(d)

R
R
R

⍜JA

⍜JA

⍜JA

60 V

±20 V

11.2

9.0

7.3
40 A

10.8 A
40 A

4.3

34.4

mW/°C

10.1

80.8

mW/°C

2.15

17.2

mW/°C

-55 to +150 °C

29 °C/W

12.3 °C/W
58 °C/W

A

W

W

W

NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

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SEMICONDUCTORS

2

TYPICAL CHARACTERISTICS

ZXMN6A09K

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3

SEMICONDUCTORS

ZXMN6A09K

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-source breakdown voltage V
Zero gate voltage drain current I
Gate-body leakage I
Gate-source threshold voltage V
Static drain-source on-state resistance

Forward transconductance

DYNAMIC

(3)

(1) (3)

(1)

Input capacitance C
Output capacitance C
Reverse transfer capacitance C

SWITCHING

(2) (3)

Turn-on-delay time t
Rise time t
Turn-off delay time t
Fall time t
Total gate charge Q

Total gate charge Q
Gate-source charge Q
Gate drain charge Q

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

60 V ID= 250␮A, VGS=0V

1 ␮AVDS= 60V, VGS=0V

100 nA VGS=±20V, VDS=0V

1.0 V ID= 250␮A, VDS=V

0.045 ⍀ VGS= 10V, ID= 7.3A

0.070 ⍀ V

= 4.5V, ID=5.6A

GS

15 S VDS= 15V, ID= 7.3A

1426 pF

V

= 30V, VGS=0V

134 pF

DS

f=1MHz

64 pF

4.8 ns
V

= 30V, ID=1A

4.6 ns

32.5 ns

DD

≅6.0⍀,VGS= 10V

R

G

(refer to test circuit)

14.5 ns
15 nC VDS= 30V, VGS= 4.5V

= 5.6A

I

D

29 nC

7.0 nC

4.7 nC

= 30V, VGS= 10V

V

DS

= 7.3A

I

D

SOURCE-DRAIN DIODE

Diode forward voltage

Reverse recovery time
Reverse recovery charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

0.85 0.95 V Tj=25°C, IS= 6.6A,

V

=0V

GS

25.6 ns

26.0 nC

T

=25°C, IS= 3A,

j

di/dt=100A/␮s

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

4

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TYPICAL CHARACTERISTICS

ZXMN6A09K

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SEMICONDUCTORS

ZXMN6A09K

TYPICAL CHARACTERISTICS

SEMICONDUCTORS

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PACKAGE OUTLINE

Controlling dimensions are in millimeters. Approximate
conversions are given in inches

PACKAGE DIMENSIONS

DIM

Millimeters Inches

Min Max Min Max Min Max Min Max

DIM

A 2.18 2.38 0.086 0.094 e 2.30 BSC 0.090 BSC

A1 ᎏ 0.127

0.005 H 9.40 10.41 0.370 0.410

b 0.635 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070
b2 0.762 1.114 0.030 0.045 L1 2.74 REF 0.108 REF
b3 5.20 5.46 0.205 0.215 L2 0.051 BSC 0.020 BSC

c 0.457 0.609 0.018 0.024 L3 0.89 1.27 0.035 0.050
c2 0.457 0.584 0.018 0.023 L4 0.635 1.01 0.025 0.040

D 5.97 6.22 0.235 0.245 L5 1.14 1.52 0.045 0.060
D1 5.20 ᎏ 0.205

E 6.35 6.73 0.250 0.265 ⍜⬚ 0ⴗ 15ⴗ 0ⴗ 15
E1 4.32 ᎏ 0.170

Millimeters Inches

⍜1⬚ 0ⴗ 10ⴗ 0 10

ZXMN6A09K

© Zetex Semiconductors plc 2005

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ISSUE 4 - JANUARY 2005

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SEMICONDUCTORS