Datasheet ZXMN6A07F Datasheet (ZETEX)

查询ZXMN6A07F供应商

60V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN6A07F

SUMMARY
V

(BR)DSS

=60V; R

DS(ON)

=0.4 ID=1A

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23 package

•

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Relay and Solenoid driving

•

Motor control

SOT23

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN6A07FTA 7” 8mm 3000 units

ZXMN6A07FTC 13” 8mm 10000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

7N6

ISSUE 1 - MARCH 2002

Top View

1

ZXMN6A07F

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C(b)

VGS=10V; TA=70°C(b)

VGS=10V; TA=25°C(a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)

Linear Derating Factor
Power Dissipation at TA=25°C (b)

Linear Derating Factor
Operating and Storage Temperature Range Tj:T

THERMAL RESISTANCE

I

D

DM
S
SM

P

P

DSS
GS

D

D

stg

60 V

20 V

1.0

0.84

0.93
4A
1A
4A

625

5

806

6.4

-55 to +150 °C

mW

mW/°C

mW

mW/°C

A

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)

Junction to Ambient (b)

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PC, D =0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to Transient
Thermal Impedance graph.

R

R

θJA

θJA

200 °C/W

155 °C/W

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CHARACTERISTICS

ZXMN6A07F

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3

ZXMN6A07F

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance (1)
Forward Transconductance (3) g
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

SD

rr

rr

60 V

1

100 nA

1.0 3.0 V

0.3 0.40

0.55

2.3 S VDS=15V,ID=1.8A

166 pF

19.5 pF

8.7 pF

1.8 ns

1.4 ns

4.9 ns

2.0 ns

1.65 nC VDS=30V, VGS=5V,

3.2 nC

0.67 nC

0.82 nC

0.8 0.95 V TJ=25°C, IS=0.45A,

20.5 ns TJ=25°C, IF=1.8A,

21.3 nC

ID=250µA, VGS=0V
VDS=60V, VGS=0V

µA

VGS=±20V, VDS=0V
ID=250µA, VDS=V
VGS=10V, ID=1.8A

Ω

VGS=4.5V, ID=1.3A

Ω

VDS=40V,VGS=0V,
f=1MHz

VDD=30V, ID=1.8A
RG=6.0Ω,VGS=10V

ID=1.8A

VDS=30V,VGS=10V,

=1.8A

I

D

VGS=0V

di/dt= 100A/µs

GS

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TYPICAL CHARACTERISTICS

ZXMN6A07F

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ZXMN6A07F

TYPICAL CHARACTERISTICS

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PACKAGE OUTLINE PAD LAYOUT

PACKAGE DIMENSIONS

ZXMN6A07F

MILLIMETRES

DIM

MILLIMETRES

DIM

MIN MAX MIN MAX

A 2.67 3.05 H 0.33 0.51

B 1.20 1.40 K 0.01 0.10

C ᎏ 1.10 L 2.10 2.50

D 0.37 0.53 M 0.45 0.64

F 0.085 0.15 N 0.95 NOM

G 1.90 NOM ␸ 10⬚ TYP

© Zetex plc 2002

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reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.

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ISSUE 1 - MARCH 2002

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