Datasheet ZXMN4A06G Datasheet (ZETEX)

40V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makesthemidealforhighefficiency,lowvoltage,powermanagementapplications.

= 40V; R

= 0.05 ID= 7A

DS(ON)

ZXMN4A06G

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT223 package

•

APPLICATIONS

•

DC - DC Converters

•

Audio Output Stages

•

Relay and Solenoid driving

•

Motor control

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN4A06GTA 7” 12mm 1000 units
ZXMN4A06GTC 13” 12mm 4000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMN
4A06

SOT223

Top View

ISSUE 1 - MAY 2002

1

ZXMN4A06G

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current V

=10V; TA=25°C(b)

GS

V

=10V; TA=70°C(b)

GS

V

=10V; TA=25°C(a)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

THERMAL RESISTANCE

I

D

DM
S
SM

P

P

DSS
GS

D

D

j:Tstg

40 V

20 V

7.0

5.6

5.0
22 A

5.4 A
22 A

2.0
16

mW/°C

3.9
31

mW/°C

-55 to +150 °C

A

W

W

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R
Junction to Ambient (b) R

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10␮s - pulse width limited by maximum junction temperature.

θJA

θJA

62.5 °C/W

32.2 °C/W

ISSUE 1 - MAY 2002

2

CHARACTERISTICS

ZXMN4A06G

R

DS(on)

Limi ted

10

1

DC

1s

100m

Single Pulse

Drain Current (A)

T

amb

10m

D

I

VDSDrain-Source Voltage (V)

100ms

10ms

1ms

= 25° C

110

100µs

Safe Operating Area

70

T

=25°C

amb

60
50
40

D= 0.5

30
20

D= 0.2

10

0

100µ 1m 10m100m 1 10 100 1k

Thermal Resistance (° C/W)

Transient Thermal Impedance

Pulse Width (s)

Single Pulse

D= 0.05

D= 0.1

2.0

1.6

1.2

0.8

0.4

0.0
0 20 40 60 80 100 120 140 160

Max Power Dissipation (W)

100

10

Maximum Power (W)

1

100µ 1m 10m100m 1 10 100 1k

Temperature (° C)

Derating Curve

Single Pulse

T

=25°C

amb

Pulse Width (s)

Pulse Power Dissipation

ISSUE 1 - MAY 2002

3

ZXMN4A06G

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance (1)
Forward Transconductance (3) g
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)
r
d(off)
f

g
gs
gd

SD

rr

rr

40 V ID=250␮A, VGS=0V

1 ␮AVDS=40V, VGS=0V

100 nA

V

=±20V, VDS=0V

GS

1.0 V ID=250␮A, VDS=V

0.050

0.075

VGS=10V, ID=4.5A

⍀

V

⍀

=4.5V, ID=3.2A

GS

8.7 S VDS=15V,ID=2.5A

770 pF

V

=40V,VGS=0V,

92 pF

DS

f=1MHz

61 pF

2.55 ns
V

4.45 ns

28.61 ns

=30V, ID=2.5A

DD

R

=6.0⍀,VGS=10V

G

(refer to test circuit)

7.35 ns

18.2 nC

2.1 nC

4.5 nC

=30V,VGS=10V,

V

DS

I

=2.5A

D

(refer to test circuit)

0.8 0.95 V TJ=25°C, IS=2.5A,
V

=0V

GS

19.86 ns TJ=25°C, IF=2.5A,

16.36 nC

di/dt= 100A/µs

GS

NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

4

ISSUE 1 - MAY 2002

TYPICAL CHARACTERISTICS

ZXMN4A06G

T= 25°C

10

1

Drain Current (A)

0.1

D

I

0.1 1 10

VDSDrain-Source Voltage (V)

10V

4V

3.5V
3V

2.5V
V

GS

2V

Output Characteristics

10

T = 150° C

T = 25° C

1

Drain Current (A)

D

I

VDS=10V

1234

VGSGate-Source Voltage (V)

Typical Transfer Characteristics

1.5V

10

2V

V

GS

1

T = 25° C

2.5V
3V

3.5V

T = 150° C

10V

10

1

Drain Current (A)

0.1

D

I

0.1 1 10

VDSDrain-Source Voltage (V)

4V

3.5V
3V

2.5V

2V

V

1.5V

GS

Output Characteristics

1.8

1.6

GS(th)

1.4

and V

1.2

DS(on)

1.0

0.8

0.6

Normalised R

0.4

-50 0 50 100 150

VGS= 10V
I

=4.5A

D

VGS=V

DS

ID=250uA

R

V

DS(on)

GS(th)

Tj Junction Temperature (° C)

Normalised Curves v Tem perature

10

1

T = 150° C

T = 25° C

0.1

Drain-Source On-Resistance (Ω)

DS(on)

R

On-Resistance v Drain Current

ISSUE 1 - MAY 2002

110

IDDrain Current (A)

4V

10V

Reverse Drain Current (A)

0.1

SD

I

0.2 0.4 0.6 0.8 1.0 1.2 1.4

V

Source-Drain Voltage (V)

SD

Source-Drain Diode Forward Voltage

5

ZXMN4A06G

TYPICAL CHARACTERISTICS

ISSUE 1 - MAY 2002

6

ZXMN4A06G

PACKAGE OUTLINE

PACKAGE DIMENSIONS

MILLIMETRES

DIM

MIN MAX MIN MAX
A ᎏ 1.80 D 6.30 6.70
A1 0.02 0.10 e 2.30 BASIC
A2 1.55 1.65 e1 4.60 BASIC
b 0.66 0.84 E 6.70 7.30
b2 2.90 3.10 E1 3.30 3.70
C 0.23 0.33 L 0.90 ᎏ

MILLIMETRES

DIM

PAD LAYOUT DETAILS

4.6

2.3

6.8

3.8 min

2.0 min

(3x)

1.5 min
(3x)

2.0 min

© Zetex plc 2002

Zetex plc
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Oldham, OL9 8NP
United Kingdom
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www.zetex.com

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ISSUE 1 - MAY 2002

7