Datasheet ZXMN3B14F Datasheet (ZETEX)

查询ZXMN3B14F供应商

30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE

SUMMARY

V

(BR)DSS

DESCRIPTION

This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.

=30V : RDS(on)=0.08 ; ID=3.5A

ZXMN3B14F

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23 package

•

APPLICATIONS

•

DC-DC converters

•

Power management functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN3B14FTA 7” 8mm 3,000 units
ZXMN3B14FTC 13” 8mm 10,000 units

TAPE

WIDTH

QUANTITY

PER REEL

K

C

A

P

PINOUT

E

G

A

DEVICE MARKING

•

3B14

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1

SEMICONDUCTORS

ZXMN3B14F

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current @ V

=4.5V;TA=25°C

GS

@VGS=4.5V;TA=70°C
@VGS=4.5V;TA=25°C

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T

A

=25°C

(c)

(a)

(b)

(b)
(b)
(a)

I

I
I
I
P

DSS
GS

D

DM
S
SM

D

Linear Derating Factor
Power Dissipation at T

A

=25°C

(b)

P

D

Linear Derating Factor
Operating and Storage Temperature Range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300␮s - pulse width limited by maximum junction temperature.

(a)

(b)

R
R

⍜JA

⍜JA

30 V

⫾12 V

3.5

2.9

2.9
16 A

2.4 A
16 A

1
8

mW/°C

1.5
12

mW/°C

-55 to +150 °C

125 °C/W

83 °C/W

A
A
A

W

W

SEMICONDUCTORS

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TYPICAL CHARACTERISTICS

ZXMN3B14F

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SEMICONDUCTORS

ZXMN3B14F

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State
Resistance
Forward Transconductance

DYNAMIC

(1)

(1) (3)

(3)

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On-Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate Drain Charge Q

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g
gs
gd

30 V ID= 250␮A, VGS=0V

1 ␮AVDS=30V,VGS=0V

100 nA VGS=⫾12V, VDS=0V

0.7 V ID= 250␮A, VDS=V

0.080

0.140

⍀

VGS=4.5V,ID=3.1A

=2.5V,ID=2.2A

V

⍀

GS

8.5 S VDS=15V,ID=3.1A

568 pF
101 pF

66 pF

3.6 ns

4.9 ns

17.3 ns

9.8 ns

6.7 nC

1.4 nC

1.8 nC

V

=15V,VGS=0V

DS

f=1MHz

V

=15V,VGS=4.5V

DD

=1A

I

D

≅ 6.0⍀

R

G

=15V,VGS=4.5V

V

DS

=3.1A

I

D

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

(1)

(3)

(3)

V

SD

t

rr

Q

rr

0.82 0.95 V Tj=25°C, IS=3.1A,
=0V

V

GS

10.8 ns

4.54 nC

T

=25°C, IF=1.6A,

j

di/dt=100A/␮s

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ2%.
(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

4

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N-CHANNEL TYPICAL CHARACTERISTICS

ZXMN3B14F

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SEMICONDUCTORS

ZXMN3B14F

N-CHANNEL TYPICAL CHARACTERISTICS

SEMICONDUCTORS

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ZXMN3B14F

PACKAGE OUTLINE PAD LAYOUT

Controlling dimensions are in millimetres. Approximate conversions are given in inches

PACKAGE DIMENSIONS

MILLIMETRES INCHES

DIM

MIN MAX MIN MAX MIN MAX MIN MAX

A 2.67 3.05 0.105 0.120 H 0.33 0.51 0.013 0.020
B 1.20 1.40 0.047 0.055 K 0.01 0.10 0.0004 0.004
C ᎏ 1.10 ᎏ 0.043 L 2.10 2.50 0.083 0.0985
D 0.37 0.53 0.015 0.021 M 0.45 0.64 0.018 0.025
F 0.085 0.15 0.0034 0.0059 N 0.95 NOM 0.0375 NOM
G 1.90 NOM 0.075 NOM ⍜ 10⬚ TYP 10⬚ TYP

MILLIMETRES INCHES

DIM

© Zetex Semiconductors plc 2005

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ISSUE 1 - JUNE 2005

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SEMICONDUCTORS