Datasheet ZXMN2A04DN8 Datasheet (ZETEX)

查询ZXMN2A04DN8供应商

DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V

(BR)DSS

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

•

=20V; R

Low on-resistance

DS(ON)

ZXMN2A04DN8

=0.030⍀ ID=6.8A

SO8

Fast switching speed

•

Low threshold

•

Low gate drive

•

Low profile SOIC package

•

APPLICATIONS

• DC - DC Converters

•

Power Management Functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY

ZXMN2A04DN8TA 7” 12mm 500 units
ZXMN2A04DN8TC 13” 12mm 2500 units

DEVICE MARKING

•

ZXMN
2A04D

PER REEL

Top View

PROVISIONAL ISSUE A - AUGUST 2001

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ZXMN2A04DN8

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V

=10V; TA=25°C)(b)(d)

GS

(V

=10V; TA=70°C)(b)(d)

GS

(V

=10V; TA=25°C)(a)(d)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor

=25°C (a)(d)

A

=25°C (a)(e)

A

=25°C (b)(d)

A

Operating and Storage Temperature Range T

I

P

P

P

DSS

GS

D

DM

S

SM

D

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (a)(e) R
Junction to Ambient (b)(d) R

θJA

θJA

θJA

20 V

⫾12

6.8

5.4

5.2
23 A
12 A
23 A

1.25
10

mW/°C

1.8
14

mW/°C

2.1
17

mW/°C

-55 to +150 °C

100 °C/W

70 °C/W
60 °C/W

V
A

W

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum

junction temperature. Refer to Transcient Thermal Inpedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.

PROVISIONAL ISSUE A - AUGUST 2001

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ZXMN2A04DN8

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

A

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance (1) R

Forward Transconductance (3) g

(BR)DSS

DSS

GSS

GS(th)

DS(on)

fs

20 V

0.5
100 nA

0.7 V

0.030

0.045

40 S VDS=10V,ID=6A

I

D

VDS=20V, VGS=0V

µA

V

I

D

V

Ω

V

Ω

=250µA, VGS=0V

=±12V, VDS=0V

GS

=250µA, VDS=V

=4.5V, ID=11A

GS

=2.5V, ID=5A

GS

DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

iss

oss

rss

2300 pF
450 pF
260 pF

V

=15V, VGS=0V,

DS

f=1MHz

SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

d(on)

r

d(off)

f

g

g

gs

gd

6.3 ns

8.5 ns
25 ns

=10V, ID=6A

V

DD

R

=6.0Ω,VGS=5V

G

5ns

19.4 nC VDS=15V,VGS=5V,
I

=3.5A

D

24 nC

V

=10V,VGS=4.5V,

5nC

I

D

DS

=6A

4nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

SD

rr

rr

TBA? 0.95 V TJ=25°C, IS=5.1A,

V

=0V

GS

15 ns TJ=25°C, IF=6A,
5nC

di/dt= 100A/µs

NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

GS

PROVISIONAL ISSUE A - AUGUST 2001

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ZXMN2A04DN8

PACKAGE DIMENSIONS

DIM Millimetres Inches

Min Max Min Max
A 4.80 4.98 0.189 0.196
B 1.27 BSC 0.05 BSC
C 0.53 REF 0.02 REF
D 0.36 0.46 0.014 0.018
E 3.81 3.99 0.15 0.157
F 1.35 1.75 0.05 0.07
G 0.10 0.25 0.004 0.010
J 5.80 6.20 0.23 0.24
K 0°8°0°8°
L 0.41 1.27 0.016 0.050

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PROVISIONAL ISSUE A - AUGUST 2001

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