Datasheet ZXMN2A03E6 Datasheet (ZETEX)

查询ZXMN2A03E6供应商

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V

(BR)DSS

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.

FEATURES

•

=20V; R

Low on-resistance

DS(ON)

ZXMN2A03E6

=0.055⍀D=4.5A

SOT23-6

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23-6 package

•

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY

ZXMN2A03E6TA 7” 8mm 3000 units

ZXMN2A03E6TC 13” 8mm 10000 units

DEVICE MARKING

•

2A3

PER REEL

Top View

PROVISIONAL ISSUE C - NOVEMBER 2001

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ZXMN2A03E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V

=4.5V; TA=25°C(b)

GS

V

=4.5V; TA=70°C(b)

GS

V

=4.5V; TA=25°C(a)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

DSS

GS

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

θJA

θJA

20 V

⫾12 V

4.5

3.6

3.6
16 A

2.7 A
16 A

1.1

8.8

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

113 °C/W

73 °C/W

A

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum

junction temperature.

PROVISIONAL ISSUE C - NOVEMBER 2001

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ZXMN2A03E6

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

A

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (1)(3) g

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

20 V

1

100 nA

0.7 V

0.055

0.100

12 S VDS=10V,ID=7.2A

I

=250µA, VGS=0V

D

VDS=20V, VGS=0V

µA

V

I

=250µA, VDS=V

D

V

Ω
Ω

GS

V

GS

=±12V, VDS=0V

GS

=4.5V, ID=7.2A
=2.5V, ID=3.6A

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

iss

oss

rss

823 pF

159 pF

93 pF

V

=15V,VGS=0V,

DS

f=1MHz

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

d(on)

r

d(off)

f

g

gs

gd

4.3 ns

8.0 ns

17.7 ns

10.0 ns

8.6 nC

1.9 nC

2.5 nC

=10V, ID=3.5A

V

DD

R

=6.0Ω,VGS=5V

G

V

=10V,VGS=4.5V,

DS

I

=3.5A

D

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge (3) Q

SD

rr

rr

0.85 0.95 V TJ=25°C, IS=4.2A,
V

=0V

GS

14.2 ns TJ=25°C, IF=3.5A,

7.2 nC

di/dt= 100A/µs

NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

GS

PROVISIONAL ISSUE C - NOVEMBER 2001

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ZXMN2A03E6

PACKAGE DIMENSIONS

b

AA2

DIM Millimetres Inches

Min Max Min Max

A 0.90 1.45 0.35 0.057

A1 0.00 0.15 0 0.006

A2 0.90 1.30 0.035 0.051

b 0.35 0.50 0.014 0.019

C 0.09 0.20 0.0035 0.008

D 2.80 3.00 0.110 0.118

E 2.60 3.00 0.102 0.118

E1 1.50 1.75 0.059 0.069

L 0.10 0.60 0.004 0.002

e 0.95 REF 0.037 REF

e1 1.90 REF 0.074 REF

L

0° 10° 0° 10°

e

E

e1

D

A1

PAD LAYOUT DETAILS

2

L

E1

a

DATUM A

C

© Zetex plc 2001

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PROVISIONAL ISSUE C - NOVEMBER 2001

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