Datasheet ZXMN2A01FTA, ZXMN2A01FTC Datasheet (Zetex)

20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY

V

(BR)DSS

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

=20V; R

=0.12⍀D=2.09A

DS(ON)

ZXMN2A01F

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT23 package

•

APPLICATIONS

• DC - DC Converters

•

Power Management Functions

•

Motor control

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY

ZXMN2A01FTA 7” 8mm 3000 units
ZXMN2A01FTC 13” 8mm 10000 units

DEVICE MARKING

•

7N2

PER REEL

SOT23

Top View

PROVISIONAL ISSUE B - JUNE 2001

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ZXMN2A01F

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current V

=4.5V; TA=25°C(b)

GS

V

=4.5V; TA=70°C(b)

GS

V

=4.5V; TA=25°C(a)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T

Linear Derating Factor
Power Dissipation at T

Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

DSS

GS

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R

θJA

θJA

20 V

12

2.09

1.67

1.84
10 A

1.05 A
10 A

625

5

806

6.4

mW

mW/°C

mW

mW/°C

-55 to +150 °C

200 °C/W
155 °C/W

V
A

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature.

PROVISIONAL ISSUE B - JUNE 2001

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ZXMN2A01F

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

A

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance

(1)
Forward Transconductance (3) g

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

20 V

1
100 nA

0.7 V

0.09 0.12

0.30

6.2 S VDS=10V,ID=4A

I

=250µA, VGS=0V

D

VDS=20V, VGS=0V

µA

V

I

=250µA, VDS=V

D

V

Ω

GS

V

Ω

GS

=±12V, VDS=0V

GS

=4.5V, ID=4A
=2.5V, ID=1.5A

DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

iss

oss

rss

299 pF
60 pF
33 pF

V

=15V,VGS=0V,

DS

f=1MHz

SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

d(on)

r

d(off)

f

g

gs

gd

2.31 ns

2.60 ns

1.55 ns

1.31 ns

3.1 nC

0.7 nC

1.0 nC

=10V, ID=4A

V

DD

R

=6.0Ω,VGS=5V

G

V

=10V,VGS=4.5V,

DS

I

=4A

D

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

SD

rr

rr

0.84 0.95 V TJ=25°C, IS=0.6A,
V

=0V

GS

11.2 ns TJ=25°C, IF=4A,

3.64 nC

di/dt= 100A/µs

NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

GS

PROVISIONAL ISSUE B - JUNE 2001

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ZXMN2A01F

PACKAGE DIMENSIONS

N

PAD LAYOUT DETAILS

DIM Millimetres Inches

Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C – 1.10 – 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N

NOM 0.95 NOM 0.037

PAD LAYOUT DETAILS

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Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for
any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves
the right to alter without notice the specification, design, price or conditions of supply of any product or service.

PROVISIONAL ISSUE B - JUNE 2001

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