Datasheet ZXMN10A11G Datasheet (ZETEX)

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100V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN10A11G

SUMMARY
V

(BR)DSS

= 100V; R

= 0.6 ID= 1.8A

DS(ON)

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

SOT223 package

•

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Relay and Solenoid driving

•

Motor control

SOT223

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN10A11GFTA 7” 12mm 1000 units

ZXMN10A11GFTC 13” 12mm 4000 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMN
10A11

ISSUE 1 - MARCH 2002

Top View

1

ZXMN10A11G

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C(b)

VGS=10V; TA=70°C(b)

VGS=10V; TA=25°C(a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at TA=25°C (a)

Linear Derating Factor
Power Dissipation at TA=25°C (b)

Linear Derating Factor
Operating and Storage Temperature Range Tj:T

THERMAL RESISTANCE

I

D

DM
S
SM

P

P

DSS
GS

D

D

stg

100 V

20 V

1.8

1.4

1.3

5.8 A

4.6 A

5.8 A
2

16

3.9

31

-55 to +150 °C

mW/°C

mW/°C

A

W

W

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)

Junction to Ambient (b)

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.

(c) Repetitive rating 25mm x 25mm FRA PCB, D=0.05 pulse width = 10␮s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.

R

R

θJA

θJA

62.5 °C/W

32 °C/W

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CHARACTERISTICS

ZXMN10A11G

ISSUE 1 - MARCH 2002

3

ZXMN10A11G

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated)

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance (1)
Forward Transconductance (3) g
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

NOTES
(1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

SD

rr

rr

100 V ID=250␮A, VGS=0V

1 ␮AVDS=100V, VGS=0V

100 nA

2.0 4.0 V ID=250␮A, VDS=V

0.60

0.70

3.95 S VDS=15V,ID=2.6A

274 pF

21 pF
11 pF

2.7 ns

1.7 ns

7.4 ns

3.5 ns
3nCV

5.4 nC

1.4 nC

1.5 nC

0.85 0.95 V TJ=25°C, IS=1.85A,

26 ns TJ=25°C, IF=1.0A,
30 nC

VGS=±20V, VDS=0V

VGS=10V, ID=2.6A

⍀

VGS=6V, ID=1.3A

⍀

VDS=50V,VGS=0V,
f=1MHz

VDD=50V, ID=1A
RG=6.0⍀,VGS=10V

=50V, VGS=5V,

DS

ID=2.5A

VDS=50V,VGS=10V,

=2.5A

I

D

VGS=0V

di/dt= 100A/µs

GS

ISSUE 1 - MARCH 2002

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TYPICAL CHARACTERISTICS

ZXMN10A11G

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ZXMN10A11G

TYPICAL CHARACTERISTICS

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PACKAGE DIMENSIONSPACKAGE OUTLINE

MILLIMETRES

DIM

MIN MAX

A ᎏ 1.80

A1 0.02 0.10

A2 1.55 1.65

b 0.66 0.84

b2 2.90 3.10

C 0.23 0.33

D 6.30 6.70

e 2.30 BASIC

e1 4.60 BASIC

E 6.70 7.30

E1 3.30 3.70

L0.90ᎏ

ZXMN10A11G

© Zetex plc 2002

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ISSUE 1 - MARCH 2002

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