Datasheet ZXMN10A08E6 Datasheet (ZETEX)

查询ZXMN10A08E6供应商

100V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.

= 100V; R

DS(ON)

ZXMN10A08E6

= 0.4 ID= 1.5A

FEATURES

Low on-resistance

•

Fast switching speed

•

Low threshold

•

Low gate drive

•

•

SOT23-6 package

APPLICATIONS

•

DC - DC Converters

•

Power Management Functions

•

Disconnect switches

•

Motor control

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMN10A08E6TA 7” 8mm 3000 units

ZXMN10A08E6TC 13” 8mm 10000 units

TAPE

WIDTH

QUANTITY

PER REEL

-

6

3

2

T

O

S

DEVICE MARKING

•

10A8

ISSUE 1 - MARCH 2002

Top View

1

ZXMN10A08E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current VGS=10V; TA=25°C (b)

VGS=10V; TA=70°C (b)

VGS=10V; TA=25°C (a)
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) (c) I
Power Dissipation at TA=25°C (a)

Linear Derating Factor
Power Dissipation at TA=25°C (b)

Linear Derating Factor
Operating and Storage Temperature Range Tj:T

I

D

DM
S
SM

P

P

DSS
GS

D

D

stg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)

Junction to Ambient (b)

R

R

θJA

θJA

100 V

20 V

1.5

1.2

1.21

5.3 A

2.5 A

5.3 A

1.1

8.8

1.7

13.6

-55 to +150 °C

113 °C/W

73 °C/W

mW/°C

mW/°C

A

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t⭐10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10␮s - pulse width limited by maximum junction temperature. Refer to

Transient Thermal Impedance graph

ISSUE 1 - MARCH 2002

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CHARACTERISTICS

ZXMN10A08E6

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ZXMN10A08E6

ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance

(1)
Forward Transconductance (1)(3) g
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q

= 25°C unless otherwise stated).

A

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

SD

rr

rr

100 V ID=250␮A, VGS=0V

0.5 ␮AVDS=100V, VGS=0V

100 nA VGS=⫾20V, VDS=0V

2.0 V ID=250␮A, VDS=V

0.40

0.60

5.0 S VDS=15V,ID=3.2A

405 pF

28.2 pF

14.2 pF

3.4 ns

2.2 ns
8ns

3.2 ns

4.2 nC VDS=50V,VGS=5V,

7.7 nC

1.8 nC

2.1 nC

0.87 0.95 V TJ=25°C, IS=3.2A,

27 ns TJ=25°C, IF=1.2A,
32 nC

⍀
⍀

VGS=10V, ID=3.2A
VGS=6V, ID=2.6A

VDS=50V,VGS=0V,
f=1MHz

VDD=30V, ID=1.2A
RG=6.0⍀,VGS=10V

=1.2A

I

D

VDS=50V,VGS=10V,

=1.2A

I

D

VGS=0V

di/dt= 100A/␮s

GS

NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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ISSUE 1 - MARCH 2002

TYPICAL CHARACTERISTICS

ZXMN10A08E6

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ZXMN10A08E6

TYPICAL CHARACTERISTICS

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ZXMN10A08E6

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

b

e

2

L

E

e1

D

AA2

A1

DIM Millimetres Inches

Min Max Min Max

A 0.90 1.45 0.35 0.057

A1 0.00 0.15 0 0.006

A2 0.90 1.30 0.035 0.051

b 0.35 0.50 0.014 0.019

C 0.09 0.20 0.0035 0.008

D 2.80 3.00 0.110 0.118

E 2.60 3.00 0.102 0.118

E1 1.50 1.75 0.059 0.069

L 0.10 0.60 0.004 0.002

e 0.95 REF 0.037 REF

e1 1.90 REF 0.074 REF

L

0° 10° 0° 10°

E1

a

DATUM A

C

© Zetex plc 2001

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ISSUE 1 - MARCH 2002

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