Datasheet ZXMD63P03X Datasheet (ZETEX)

查询ZXMD63P03X供应商

DUAL 30V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXMD63P03XTA 7 12mm embossed 1000 units

ZXMD63P03XTC 13 12mm embossed 4000 units

=-30V; R

(inches)

DS(ON)

ZXMD63P03X

=0.185V; ID=-2.0A

MSOP8

TAPE WIDTH (mm) QUANTITY

PER REEL

Top View

DEVICE MARKING

• ZXM63P03

PROVISIONAL ISSUE A - JULY 1999

49

ZXMD63P03X

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V

(V

=4.5V; TA=25°C)(b)(d)

GS

=4.5V; TA=70°C)(b)(d)

GS

Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I

Pulsed Source Current (Body Diode)(c)(d) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)(d)

A

=25°C (a)(e)

A

=25°C (b)(d)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

P

DSS

GS

D

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

θJA

θJA

-30 V

± 20

-2.0

-1.6

-9.6 A

-1.4 A

-9.6 A

0.87

6.9

mW/°C

1.04

8.3

mW/°C

1.25
10

mW/°C

-55 to +150 °C

143 °C/W

100 °C/W

120 °C/W

V
A

W

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

PROVISIONAL ISSUE A - JULY 1999

50

CHARACTERISTICS

ZXMD63P03X

100

Refer Note (a)

10

10

- Drain Current (A)

D

I

0.1

DC

1s

100ms

10ms

1ms

100us

0.1 10 100

10

VDS- Drain-Source Voltage (V)

Safe Operating Area

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 0.1 100

D=0.5

D=0.2

D=0.1

D=0.05

Refer Note (b)

Single Pulse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

1.4

1.2

1.0

0.8

Refer Note (b)
Refer Note (a)

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

080160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

160

D=0.5

D=0.2

D=0.1

D=0.05

Refer Note (a)

Single Pulse

100

140

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

Pulse Width (s)

Transient Thermal Impedance

PROVISIONAL ISSUE A - JULY 1999

51

ZXMD63P03X

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (3) g

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

-30 V

-1
±100

-1.0 V

0.185

0.27

µA

nA

Ω
Ω

=-250µA, VGS=0V

I

D

VDS=-30V, VGS=0V

VGS=± 20V, VDS=0V

=-250µA, VDS=V

I

D

VGS=-10V, ID=-1.2A

=-4.5V, ID=-0.6A

V

GS

0.92 S VDS=-10V,ID=-0.6A

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

iss

oss

rss

270 pF

80 pF

30 pF

=-25 V, VGS=0V,

V

DS

f=1MHz

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate Drain Charge Q

d(on)

r

d(off)

f

g

gs

gd

2.6 ns

4.8 ns

13.1 ns

9.3 ns

7nC

1.2 nC

2nC

V

=-15V, ID=-2.4A

DD

R

=6.2Ω, RD=6.2Ω

G

(Refer to test
circuit)

=-24V,VGS=-10V,

V

DS

=-1.2A

I

D

(Refer to test
circuit)

GS

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge(3) Q

SD

rr

rr

21.4 ns Tj=25°C, IF=-1.2A,

15.7 nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JULY 1999

52

-0.95 V Tj=25°C, IS=-1.2A,

=0V

V

GS

di/dt= 100A/µs

TYPICAL CHARACTERISTICS

ZXMD63P03X

100

+25° C

10V

10

1

- Drain Current (A)

D

-I

0.1

0.1 10 100

8V 6V7V

1

-VGS

5V

4.5V

4V

3.5V

3V

2.5V

-VDS - Drain-Source Voltage (V)

Output Characteristics

10

VDS=-10V

T=150°C

1

- Drain Current (A)

D

-I

0.1
246

T=25° C

3.5 5.52.53 4.55

-VGS - Gate-Source Voltage (V)

Typical Transfer Characteristics

100

+150°C

10

1

- Drain Current (A)

D

-I

0.1

0.1 100

10V8V7V6V

101

-VDS - Drain-Source Voltage (V)

Output Characteristics

2

GS(th)

1.5

and V

1

DS(on)

0.5

0

Normalised R

Tj - Junction Temperature (°C)

Normalised RDS(on) and VGS(th)

v Temperature

-VGS

RDS(on)

VGS(th)

5V

4.5V

4V

3.5V

3V

2.5V

VGS=-10V

ID=-1.2A

VGS=VDS

ID=-250uA

1500100-50

20050-100

10

1

0.1

0.1 1 10 0.2 1.4

- Drain-Source On-Resistance (Ω)

VGS=-3V

-ID- Drain Current (A)

On-Resistance v Drain Current

DS(on)

R

PROVISIONAL ISSUE A - JULY 1999

VGS=-4.5V

VGS=-10V

53

10

1

0.1

T=150°C

- Reverse Drain Current (A)

SD

-I

0.01

0.4 1.0 0.8 1.2 0.6

T=25°C

-VSD- Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

ZXMD63P03X

TYPICAL CHARACTERISTICS

600

500

400

300

200

C - Capacitance (pF)

100

0

0.1 10 100 0 4 8

1

-VDS- Drain Source Voltage (V)

Ciss

Coss

Crss

Vgs=0V

f=1Mhz

Capacitance v Drain-Source Voltage

10

ID=-1.2A

9

- Gate-Source Voltage (V)

GS

-V

8
7
6
5
4
3
2
1
0

VDS=-15V

VDS=-24V

3712 56

Q -Charge (nC)

Gate-Source Voltage v Gate Charge

Basic Gate Charge Waveform

Switching Time Waveforms

PROVISIONAL ISSUE A - JULY 1999

Gate Charge Test Circuit

Switching Time Test Circuit

54

ZXMD63P03X

PACKAGE DIMENSIONS

D

5678

E

234

1

e X 6

A1

A

B

Conforms to JEDEC MO-187 Iss A

PAD LAYOUT DETAILS

H

C

DIM Millimetres Inches

MIN MAX MIN MAX

A 1.10 0.043

A1 0.05 0.15 0.002 0.006

B 0.25 0.40 0.010 0.016

C 0.13 0.23 0.005 0.009

D 2.90 3.10 0.114 0.122

θ°

e 0.65 BSC 0.0256 BSC

L

E 2.90 3.10 0.114 0.122

H 4.90 BSC 0.193 BSC

L 0.40 0.70 0.016 0.028

q° 0° 6° 0° 6°

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PROVISIONAL ISSUE A - JULY 1999

56