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查询ZXMD63P02X供应商
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXMD63P02XTA 7 12mm embossed 1000 units
ZXMD63P02XTC 13 12mm embossed 4000 units
=-20V; R
(inches)
DS(ON)
ZXMD63P02X
=0.27V; ID=-1.7A
MSOP8
TAPE WIDTH (mm) QUANTITY
PER REEL
Top View
DEVICE MARKING
• ZXM63P02
PROVISIONAL ISSUE A - JUNE 1999
41
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ZXMD63P02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V
(V
=4.5V; TA=25°C)(b)(d)
GS
=4.5V; TA=70°C)(b)(d)
GS
Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I
Pulsed Source Current (Body Diode)(c)(d) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)(d)
A
=25°C (a)(e)
A
=25°C (b)(d)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
P
DSS
GS
D
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R
Junction to Ambient (b)(d) R
Junction to Ambient (a)(e) R
θJA
θJA
θJA
-20 V
± 12
-1.7
-1.35
-9.6 A
-1.4 A
-9.6 A
0.87
6.9
mW/°C
1.04
8.3
mW/°C
1.25
10
mW/°C
-55 to +150 °C
143 °C/W
100 °C/W
120 °C/W
V
A
W
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
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CHARACTERISTICS
ZXMD63P02X
100
Refer Note (a)
10
1
ID - Drain Current (A)
0.1
DC
1s
100ms
10ms
1ms
100µs
0.1 10 100
1
VDS- Drain-Source Voltage (V)
Safe Operating Area
120
100
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 0.1 100
D=0.5
D=0.2
D=0.1
D=0.05
Refer N ote (b)
Single Pu lse
0.01 100.001 1
Pulse Width (s)
Transient Thermal Impedance
1.4
1.2
1.0
0.8
Refer N ote (b)
Refer Note (a)
0.6
0.4
0.2
0
Max Power Dissipation (Watts)
0 80 160
60 14020 40 100 120
T - Temperature (°)
Derating Curve
160
D=0.5
D=0.2
D=0.1
D=0. 05
Refer Note (a )
Single Pu lse
140
120
100
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 10000.001 0.01 0.1 1 10
Pulse Width (s)
Transient Thermal Impedance
100
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ZXMD63P02X
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3) g
(BR)DSS
DSS
GSS
GS(th)
R
DS(on)
fs
-20 V
-1
±100
-0.7 V
0.27
0.40
µA
nA
Ω
Ω
=-250µA, VGS=0V
I
D
VDS=-20V, VGS=0V
VGS=± 12V, VDS=0V
=-250µA, VDS=
I
D
V
GS
VGS=-4.5V, ID=-1.2A
=-2.7V, ID=-0.6A
V
GS
1.3 S VDS=-10V,ID=-0.6A
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
iss
oss
rss
290 pF
120 pF
50 pF
=-15 V, VGS=0V,
V
DS
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate Drain Charge Q
d(on)
r
d(off)
f
g
gs
gd
3.4 ns
9.6 ns
16.4 ns
20.4 ns
5.25 nC
1.0 nC
2.25 nC
V
=-10V, ID=-1.2A
DD
R
=6.0Ω, RD=8.3Ω
G
(Refer to test
circuit)
=-16V,VGS=-4.5V,
V
DS
=-1.2A
I
D
(Refer to test
circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
Reverse Recovery Time (3) t
Reverse Recovery Charge(3) Q
SD
rr
rr
21.7 ns Tj=25°C, IF=-1.2A,
9.6 nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JUNE 1999
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-0.95 V Tj=25°C, IS=-1.2A,
=0V
V
GS
di/dt= 100A/µs
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TYPICAL CHARACTERISTICS
ZXMD63P02X
10
1
- Drain Current (A)
D
-I
0.1
0.1 100
+25 C
5V
4.5V
4V
110
3.5V
3V
2.5V
-VGS
2V
-VDS - Drain-Source Voltage (V)
Output Characteristics
10
VDS=-10V
T=150 C
T=25 C
1
- Drain Current (A)
D
-I
0.1
12.54
1.5 323.5
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
4.5
10
+150°C
1
- Drain Current (A)
D
-I
0.1
0.1 10 100
4.5V
5V
4V
1
-VDS - Drain-Source Voltage (V)
Output Characteristics
1.6
GS(th)
and V
DS(on)
Normalised R
1.4
1.2
1.0
0.8
0.6
0.4
RDS(on)
VGS(th)
Tj - Junction Temperature (°C)
Normalised R
DS(on)
and V
v Temperature
3.5V
3V
2.5V
-VGS
2V
VGS=-4.5V
ID=-1.2A
VGS=VDS
ID=-250uA
1500-50 100
GS(th)
20050-100
10
1
VGS=-3V
VGS=-5V
0.1
0.1 10 0.2 0.8 1.4
- Drain-Source On-Resistance (Ω)
-ID - Drain Current (A)
1
On-Resistance v Drain Current
DS(on)
R
PROVISIONAL ISSUE A - JUNE 1999
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10
1
T=150°C
0.1
T=25°C
- Reverse Drain Current (A)
SD
0.01
-I
0.4 1.00.6 1.2
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXMD63P02X
TYPICAL CHARACTERISTICS
700
600
500
400
300
200
C - Capacitance (pF)
100
0
0.1 10 100 0 4 4.5
1
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
-VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
5
ID=-1.2A
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
VGS - Gate-Source Voltage (V)
0.5
1231.5
VDS=-16V
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
3.52.5
Basic Gate Charge Waveform
Switching Time Waveforms Switching Time Test Circuit
PROVISIONAL ISSUE A - JUNE 1999
Gate Charge Test Circuit
46
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ZXMD63P02X
PACKAGE DIMENSIONS
D
5678
E
234
1
e X 6
A1
A
B
Conforms to JEDEC MO-187 Iss A
PAD LAYOUT DETAILS
H
C
DIM Millimetres Inches
MIN MAX MIN MAX
A 1.10 0.043
A1 0.05 0.15 0.002 0.006
B 0.25 0.40 0.010 0.016
C 0.13 0.23 0.005 0.009
D 2.90 3.10 0.114 0.122
θ°
e 0.65 BSC 0.0256 BSC
L
E 2.90 3.10 0.114 0.122
H 4.90 BSC 0.193 BSC
L 0.40 0.70 0.016 0.028
q° 0° 6° 0° 6°
Zetex plc.
Fields New Road, Chadderton, Oldha m, OL9 -8NP, Unit ed Kin gdom .
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
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D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
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Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
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This publication is issued to provide outline information onl y which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JUNE 1999
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