Datasheet ZXMD63N03X Datasheet (ZETEX)

查询ZXMD63N03X供应商

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXMD63N03XTA 7 12mm embossed 1000 units

ZXMD63N03XTC 13 12mm embossed 4000 units

=30V; R

DS(ON)

(inches)

ZXMD63N03X

=0.135V; ID=2.3A

MSOP8

TAPE WIDTH (mm) QUANTITY

PER REEL

Top View

DEVICE MARKING

• ZXM63N03

PROVISIONAL ISSUE A - JULY 1999

33

ZXMD63N03X

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V

(V

=4.5V; TA=25°C)(b)(d)

GS

=4.5V; TA=70°C)(b)(d)

GS

Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I

Pulsed Source Current (Body Diode)(c)(d) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)(d)

A

=25°C (a)(e)

A

=25°C (b)(d)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

P

DSS

GS

D

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

θJA

θJA

30 V

± 20

2.3

1.8
14 A

1.5 A
14 A

0.87

6.9

mW/°C

1.04

8.3

mW/°C

1.25
10

mW/°C

-55 to +150 °C

143 °C/W

100 °C/W

120 °C/W

V
A

W

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

PROVISIONAL ISSUE A - JULY 1999

34

CHARACTERISTICS

ZXMD63N03X

100

10

10

- Drain Current (A)

D

I

0.1

Refer Note (a)

DC

1s

100ms

10ms

1ms

100us

0.1 10 100

10

VDS- Drain-Source Voltage (V)

Safe Operating Area

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 0.1 100

D=0.5

D=0.2

D=0.1

D=0.05

Refer No te (b)

Single Pulse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

0 80 160

60 14020 40 100 120

Refer Note (b)
Refer Note (a)

T - Temperature (°)

Derating Curve

160

D=0.5

D=0.2

D=0.1

D=0.05

Refer No te (a)

Single Pulse

140

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

Pulse Width (s)

Transient Thermal Impedance

100

PROVISIONAL ISSUE A - JULY 1999

35

ZXMD63N03X

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (3) g

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

30 V

1

100 nA

1.0 V

0.135

0.200

µA

Ω
Ω

=250µA, VGS=0V

I

D

VDS=30V, VGS=0V

=± 20V, VDS=0V

V

GS

=250µA, VDS= V

I

D

VGS=10V, ID=1.7A

=4.5V, ID=0.85A

V

GS

1.9 S VDS=10V,ID=0.85A

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

iss

oss

rss

290 pF

70 pF

20 pF

=25 V, VGS=0V,

V

DS

f=1MHz

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate Drain Charge Q

d(on)

r

d(off)

f

g

gs

gd

2.5 ns

4.1 ns

9.6 ns

4.4 ns

8nC

1.2 nC

2nC

V

=15V, ID=1.7A

DD

R

=6.1Ω, RD=8.7Ω

G

(Refer to test
circuit)

=24V,VGS=10V,

V

DS

=1.7A

I

D

(Refer to test
circuit)

GS

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge(3) Q

SD

rr

rr

16.9 ns Tj=25°C, IF=1.7A,

9.5 nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JULY 1999

36

0.95 V Tj=25°C, IS=1.7A,

=0V

V

GS

di/dt= 100A/µs

TYPICAL CHARACTERISTICS

ZXMD63N03X

100

+25°C

10

1

- Drain Current (A)

D

I

0.1

0.1 10 100

10V 8V 7V

6V 5V

1

VGS

4V

3V

4.5V

3.5V

VDS- Drain-Source Voltage (V)

Output Characteristics

100

VDS=10V

10

T=150°C

1

- Drain Current (A)

D

I

0.1
246

T=25°C

3.5 5.52.5 3 4.5 5

VGS - Gate-Source Voltage (V)

Typical Transfer Characteristics

100

+150°C

10V 8 V 7V

10

1

- Drain Current (A)

D

I

0.1

0.1 100

6V

VDS- Drain-Source Voltage (V)

Output Characteristics

1.8

GS(th)

and V

DS(on)

Normalised R

1.6

1.4

1.2

1.0

0.8

0.6

0.4
0 150-50 100

RDS(on)

Tj - Junction Temperature (°C)

Normalised RDS(on) and VGS(th)

v Temperature

101

VGS(th)

VGS=10V

ID=1.7A

VGS=VDS

ID=250uA

VGS

5V

4V

3V

4.5V

3.5V

20050-100

)

Ω

10

1

VGS=3V

0.1

0.01

0.1 10 100 0.2 0.8 1.4

- Drain-Source On-Resistance (

DS(on)

R

On-Resistance v Drain Current

VGS=4.5V

VGS=10V

1

ID - Drain Current (A)

PROVISIONAL ISSUE A - JULY 1999

37

100

10

1

T=150 C

- Reverse Drain Current (A)
I

SD

0.1

0.4 1.00.6 1.2

T=25 C

VSD - Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

ZXMD63N03X

TYPICAL CHARACTERISTICS

500
450
400
350
300
250
200
150
100

C - Capacitance (pF)

50

0

0.1 10 100 0 4 8

1

Ciss

Coss

Crss

Vgs=0V
f=1Mhz

VDS- Drain Source Voltage (V)

Capacitance v Drain-Source Voltage

10

ID=1. 7A

9
8

- Gate-Source Voltage (V)

GS

V

7
6
5
4
3
2
1
0

123 5

VDS=15V

VDS=24V

Q -Charge (nC)

Gate-Source Voltage v Gate Charge

76

Basic Gate Charge Waveform

Switching Time Waveforms

PROVISIONAL ISSUE A - JULY 1999

Gate Charge Test Circuit

Switching Time Test Circuit

38

ZXMD63N03X

PACKAGE DIMENSIONS

D

5678

E

234

1

e X 6

A1

A

B

Conforms to JEDEC MO-187 Iss A

PAD LAYOUT DETAILS

H

C

DIM Millimetres Inches

MIN MAX MIN MAX

A 1.10 0.043

A1 0.05 0.15 0.002 0.006

B 0.25 0.40 0.010 0.016

C 0.13 0.23 0.005 0.009

D 2.90 3.10 0.114 0.122

θ°

e 0.65 BSC 0.0256 BSC

L

E 2.90 3.10 0.114 0.122

H 4.90 BSC 0.193 BSC

L 0.40 0.70 0.016 0.028

q° 0° 6° 0° 6°

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PROVISIONAL ISSUE A - JULY 1999

40