Datasheet ZXMD63N02X Datasheet (ZETEX)

查询ZXMD63N02供应商

DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT23 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXMD63N02XTA 7 12mm embossed 1000 units

ZXMD63N02XTC 13 12mm embossed 4000 units

=20V; R

DS(ON)

(inches)

ZXMD63N02X

=0.13Ω; ID=2.4A

MSOP8

TAPE WIDTH (mm) QUANTITY

PER REEL

Top View

DEVICE MARKING

• ZXM63N02

PROVISIONAL ISSUE A - JUNE 1999

25

ZXMD63N02X

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V

(V

=4.5V; TA=25°C)(b)(d)

GS

=4.5V; TA=70°C)(b)(d)

GS

Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I

Pulsed Source Current (Body Diode)(c)(d) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)(d)

A

=25°C (a)(e)

A

=25°C (b)(d)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

P

DSS

GS

D

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

θJA

θJA

20 V

± 12

2.4

1.9
19 A

1.5 A
19 A

0.87

6.9

mW/°C

1.04

8.3

mW/°C

1.25
10

mW/°C

-55 to +150 °C

143 °C/W

100 °C/W

120 °C/W

V
A

W

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

PROVISIONAL ISSUE A - JUNE 1999

26

CHARACTERISTICS

ZXMD63N02X

100

Refer Note (a)

10

1

- Drain Current (A)

D

I

0.1

DC

1s

100ms

10ms

1ms

100us

0.1 10 100

1

VDS- Drain-Source Voltage (V)

Safe Operating Area

120

100

80

60

40

20

Thermal Resistance (°C/W)

0.0001 0.1 100

Refer Note (b)

D=0.5

D=0.2

D=0.1

D=0.05

0

Single Pulse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

1.4

1.2

1.0

0.8

Refer Note (b)
Refer Note (a)

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

080160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

160

140

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

D=0.5

D=0.2

D=0.1

D=0.05

Refer Note (a)

Pulse Width (s)

Single Pulse

100

Transient Thermal Impedance

PROVISIONAL ISSUE A - JUNE 1999

27

ZXMD63N02X

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (3) g

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

20 V

1

100 nA

0.7 V

0.130

0.150

µA

Ω
Ω

=250µA, VGS=0V

I

D

VDS=20V, VGS=0V

=± 12V, VDS=0V

V

GS

=250µA, VDS= V

I

D

VGS=4.5V, ID=1.7A

=2.7V, ID=0.85A

V

GS

2.6 S VDS=10V,ID=0.85A

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

iss

oss

rss

350 pF

120 pF

50 pF

=15 V, VGS=0V,

V

DS

f=1MHz

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate Drain Charge Q

d(on)

r

d(off)

f

g

gs

gd

3.4 ns

8.1 ns

13.5 ns

9.1 ns

6nC

0.65 nC

2.5 nC

V

=10V, ID=1.7A

DD

R

=6.0Ω, RD=5.7Ω

G

(Refer to test
circuit)

=16V,VGS=4.5V,

V

DS

=1.7A

I

D

(Refer to test
circuit)

GS

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge(3) Q

SD

rr

rr

15.0 ns Tj=25°C, IF=1.7A,

5.9 nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JUNE 1999

28

0.95 V Tj=25°C, IS=1.7A,

=0V

V

GS

di/dt= 100A/µs

TYPICAL CHARACTERISTICS

ZXMD63N02X

100

+25°C

10

1

- Drain Current (A)

D

I

0.1

0.1 100

3.5V4V4.5V5V

110

VGS

3V

2.5V

2V

VDS - Drain-Source Voltage (V)

Output Characteristics

100

VDS=10V

10

T=150°C

T=25°C

1

- Drain Current (A)

D

I

0.1

12.54

1.5 323.5

VGS - Gate-Source Voltage (V)

Typical Transfer Characteristics

100

+150°C

4V

10

1

- Drain Current (A)

D

I

0.1

0.1 10 100

5V 4.5V

1

3.5V

VDS - Drain-Source Voltage (V)

Output Characteristics

1.8

1.6

GS(th)

1.4

1.2

and V

1.0

DS(on)

0.8

0.6

0.4

0.2

Normalised R

Normalised R

Tj - Junction Temperature (°C)

DS(on)

VGS(th)

and V

v Temperature

RDS(on)

VGS

3V

2.5V

2V

VGS=4.5V

ID=1.7A

VGS=VDS

ID=250uA

1500-50 100

GS(th)

20050-100

)

10

Ω

1

VGS=3V
VGS=5V

0.1

0.01

0.1 10 100 0.2 0.8 1.4

- Drain-Source On-Resistance (

1

ID - Drain Current (A)

On-Resistance v Drain Current

DS(on)

R

PROVISIONAL ISSUE A - JUNE 1999

29

100

10

1

T=150°C

- Reverse Drain Current (A)

SD

I

0.1

0.4 1.00.6 1.2

T=25°C

VSD - Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

ZXMD63N02X

TYPICAL CHARACTERISTICS

800

700

600

500

400

300

200

C - Capacitance (pF)

100

0

0.1 10100036

1

Ciss

Coss

Crss

Vgs=0V
f=1Mhz

VDS - Drain Source Voltage (V)

Capacitance v Drain-Source Voltage

5

ID=1.7A

4

VDS=16V

- Gate-Source Voltage (V)

GS

V

3

2

1

0

12 45

Q -Charge (nC)

Gate-Source Voltage v Gate Charge

Basic Gate Charge Waveform

Switching Time Waveforms

PROVISIONAL ISSUE A - JUNE 1999

Gate Charge Test Circuit

Switching Time Test Circuit

30

ZXMD63N02X

PACKAGE DIMENSIONS

D

5678

E

234

1

e X 6

A1

A

B

Conforms to JEDEC MO-187 Iss A

PAD LAYOUT DETAILS

H

C

DIM Millimetres Inches

MIN MAX MIN MAX

A 1.10 0.043

A1 0.05 0.15 0.002 0.006

B 0.25 0.40 0.010 0.016

C 0.13 0.23 0.005 0.009

D 2.90 3.10 0.114 0.122

θ°

e 0.65 BSC 0.0256 BSC

L

E 2.90 3.10 0.114 0.122

H 4.90 BSC 0.193 BSC

L 0.40 0.70 0.016 0.028

q° 0° 6° 0° 6°

Zetex plc.
Fields New Road, Chadderton, Oldha m, OL9 -8NP, Unit ed Kin gdom .
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by

Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong Zet ex plc 1999
Telefon: [phone] Telephone: [phone] Telephone:[phone]
Fax: [phone] Fax: [phone] Fax : [phone] Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.

PROVISIONAL ISSUE A - JUNE 1999

32