Datasheet ZXMD63C02XTA, ZXMD63C02XTC Datasheet (Zetex)

ZXMD63C02X

20V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
N-CHANNEL: V
P-CHANNEL: V

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• Low profile SOIC package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXMD63C02XTA 7 12mm embossed 1000 units

ZXMD63C02XTC 13 12mm embossed 4000 units

(BR)DSS

(BR)DSS

(inches)

=20V; R

=-20V; R

DS(ON)

DS(ON)

TAPE WIDTH (mm) QUANTITY

=0.13V; ID=2.4A

=0.27V; ID=-1.7A

N-CHANNEL

PER REEL

MSOP8

P-CHANNEL

Top View

DEVICE MARKING

• ZXM63C02

PROVISIONAL ISSUE A - JUNE 1999

1

ZXMD63C02X

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL N-CHANNEL P-CHANNEL UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V

(V

=4.5V; TA=25°C)(b)(d)

GS

=4.5V; TA=70°C)(b)(d)

GS

Pulsed Drain Current (c)(d) I
Continuous Source Current (Body Diode)(b)(d) I

Pulsed Source Current (Body Diode)(c)(d) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)(d)

A

=25°C (a)(e)

A

=25°C (b)(d)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

D

P

D

P

D

j:Tstg

DSS

GS

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a)(d) R

Junction to Ambient (b)(d) R

Junction to Ambient (a)(e) R

θJA

θJA

θJA

20 -20 V

± 12

2.4

1.9

-1.7

-1.35

19 -9.6 A

-1.5 -1.4 A
19 -9.6 A

0.87

6.9

mW/°C

1.04

8.3

mW/°C

1.25
10

mW/°C

-55 to +150 °C

143 °C/W

100 °C/W

120 °C/W

V
A

W

W

W

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

PROVISIONAL ISSUE A - JUNE 1999

2

N-CHANNEL CHARACTERISTICS

ZXMD63C02X

100

Refer N ote (a)

10

1

- Drain Current (A)

D

I

0.1

DC

1s

100ms

10ms

1ms

100us

0.1 10 100

1

VDS - Drain-Source Voltage (V)

Safe Operating Area

120

100

80

60

40

20

Thermal Resistance (°C/W)

0.0001 0.1 100

Refer Note (b)

D=0.5

D=0.2

D=0.1

D=0.05

0

Single Pu lse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

1.4

1.2

1.0

0.8

Refer Note (b)
Refer Note (a)

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

080160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

160

140

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

D=0.5

D=0.2

D=0.1

D=0.05

Refer N ote (a)

Pulse Width (s)

Single Pulse

100

Transient Thermal Impedance

PROVISIONAL ISSUE A - JUNE 1999

3

ZXMD63C02X

P-CHANNEL CHARACTERISTICS

100

Refer Note (a)

10

1

ID - Drain Current (A)

0.1

DC

1s

100ms

10ms

1ms

100µs

0.1 10 100

VDS - Drain-Source Voltage (V)

1

Safe Operating Area

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 0.1 100

D=0.5

D=0.2

D=0.1

D=0.05

Refer No te (b)

Single Pulse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

1.4

1.2

1.0

0.8

Refer Note (b)
Refer Note (a)

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

080160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

160

D=0.5

D=0.2

D=0.1

D=0.05

Refer Note (a)

Single Pulse

Pulse Width (s)

100

140

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

Transient Thermal Impedance

PROVISIONAL ISSUE A - JUNE 1999

4

ZXMD63C02X

N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (3) g

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate Drain Charge Q

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

= 25°C unless otherwise stated).

amb

20 V

1

100 nA

0.7 V

0.130

0.150

µA

Ω
Ω

=250µA, VGS=0V

I

D

VDS=20V, VGS=0V

=± 12V, VDS=0V

V

GS

=250µA, VDS= V

I

D

VGS=4.5V, ID=1.7A

=2.7V, ID=0.85A

V

GS

2.6 S VDS=10V,ID=0.85A

350 pF

=15 V, VGS=0V,

V

120 pF

DS

f=1MHz

50 pF

3.4 ns

8.1 ns

13.5 ns

9.1 ns

V

=10V, ID=1.7A

DD

R

=6.0Ω, RD=5.7Ω

G

(Refer to test
circuit)

6nC

=16V,VGS=4.5V,

V

0.65 nC

2.5 nC

DS

=1.7A

I

D

(Refer to test
circuit)

GS

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge(3) Q

SD

rr

rr

15.0 ns Tj=25°C, IF=1.7A,

5.9 nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JUNE 1999

5

0.95 V Tj=25°C, IS=1.7A,

=0V

V

GS

di/dt= 100A/µs

ZXMD63C02X

N-CHANNEL TYPICAL CHARACTERISTICS

100

+25°C

3.5V4V4.5V5V

VGS

10

1

- Drain Current (A)

D

I

0.1

0.1 100

110

3V

2.5V

2V

VDS - Drain-Source Voltage (V)

Output Characteristics

100

VDS=10 V

10

T=150°C

T=25°C

1

- Drain Current (A)

D

I

0.1

1.5 323.5

12.54

VGS - Gate-Source Voltage (V)

Typical Transfer Characteristics

100

+150°C

10

1

- Drain Current (A)

D

I

0.1

0.1 10 100

1

3.5V4V5V4.5V

VDS - Drain-Source Voltage (V)

Output Characteristics

1.8

1.6

GS(th)

1.4

1.2

and V

1.0

DS(on)

0.8

0.6

0.4

0.2

Normalised R

Tj - Junction Temperature (°C)

RDS(on)

VGS(th)

Normalised RDS(on) and VGS(th)

v Temperature

VGS

3V

2.5V

2V

VGS=4. 5V

VGS=VDS
ID=250u A

1500-50 100

ID=1.7A

20050-100

10

1

VGS=3V
VGS=5V

0.1

0.01

0.1 10 100 0.2 0.8 1.4

- Drain-Source On-Resistance (Ω)

1

ID - Drain Current (A)

On-Resistance v Drain Current

DS(on)

R

PROVISIONAL ISSUE A - JUNE 1999

100

10

1

T=150°C

- Reverse Drain Current (A)

SD

I

0.1

0.4 1.00.6 1.2

T=25°C

VSD - Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

6

N-CHANNEL CHARACTERISTICS

ZXMD63C02X

800

700

600

500

400

300

200

C - Capacitance (pF)

100

0

0.1 10 100 0 3 6

1

Ciss

Coss

Crss

Vgs=0V
f=1Mhz

VDS- Drain Source Voltage (V)

Capacitance v Drain-Source Voltage

5

ID=1.7A

4

VDS=16V

- Gate-Source Voltage (V)

GS

V

3

2

1

0

12 45

Q -Charge (nC)

Gate-Source Voltage v Gate Charge

Basic Gate Charge Waveform

Switching Time Waveforms

PROVISIONAL ISSUE A - JUNE 1999

Gate Charge Test Circuit

Switching Time Test Circuit

7

ZXMD63C02X

P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (3) g

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate Drain Charge Q

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

= 25°C unless otherwise stated).

amb

-20 V

-1
±100

-0.7 V

0.27

0.40

µA

nA

Ω
Ω

=-250µA, VGS=0V

I

D

VDS=-20V, VGS=0V

VGS=± 12V, VDS=0V

=-250µA, VDS=

I

D

V

GS

VGS=-4.5V, ID=-1.2A

=-2.7V, ID=-0.6A

V

GS

1.3 S VDS=-10V,ID=-0.6A

290 pF

=-15 V, VGS=0V,

V

120 pF

DS

f=1MHz

50 pF

3.4 ns

9.6 ns

16.4 ns

20.4 ns

V

=-10V, ID=-1.2A

DD

R

=6.0Ω, RD=8.3Ω

G

(Refer to test
circuit)

5.25 nC
=-16V,VGS=-4.5V,

V

1.0 nC

2.25 nC

DS

=-1.2A

I

D

(Refer to test
circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge(3) Q

SD

rr

rr

21.7 ns Tj=25°C, IF=-1.2A,

9.6 nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JUNE 1999

8

-0.95 V Tj=25°C, IS=-1.2A,

=0V

V

GS

di/dt= 100A/µs

P-CHANNEL CHARACTERISTICS

ZXMD63C02X

10

1

- Drain Current (A)

D

-I

0.1

0.1 100

+25 C

5V

4.5V
4V

110

3.5V

3V

2.5V

-VGS

2V

-VDS- Drain-Source Voltage (V)

Output Characteristics

10

VDS=-10V

T=150 C

T=25 C

1

- Drain Current (A)

D

-I

0.1

1.5 323.5

12.54

-VGS - Gate-Source Voltage (V)

Typical Transfer Characteristics

10

+150°C

1

- Drain Current (A)

D

-I

0.1

0.1 10 100

4.5V

5V

4V

1

3.5V

3V

2.5V

-VGS

2V

-VDS- Drain-Source Voltage (V)

Output Characteristics

1.6

GS(th)

1.4

1.2

and V

1.0

DS(on)

0.8

0.6

0.4

4.5

Normalised R

RDS(on)

VGS(th)

VGS=-4.5V

ID=-1.2A

VGS=VDS

ID=-250uA

1500-50 100

20050-100

Tj - Junction Temperature (°C)

Normalised RDS(on) and VGS(th)

v Temperature

10

1

0.1

0.1 10 0.2 0.8 1.4

- Drain-Source On-Resistance (Ω)

-ID - Drain Current (A)

1

On-Resistance v Drain Current

DS(on)

R

PROVISIONAL ISSUE A - JUNE 1999

VGS=-3V
VGS=-5V

10

1

T=150°C

0.1

T=25°C

- Reverse Drain Current (A)

SD

0.01

-I

0.4 1.00.6 1.2

-VSD - Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

9

TYPICAL CHARACTERISTICS

ZXMD63C02X

P-CHANNEL TYPICAL CHARACTERISTICS

700

600

500

400

300

200

C - Capacitance (pF)

100

0

0.1 10 100 0 4 4.5

-VDS- Drain Source Voltage (V)

1

Ciss

Coss

Crss

Vgs=0V
f=1Mhz

Capacitance v Drain-Source Voltage

5

ID=-1.2A

4.5
4

3.5
3

2.5
2

1.5
1

0.5
0

VGS - Gate-Source Voltage (V)

0.5

1231.5

VDS=-16V

Q -Charge (nC)

Gate-Source Voltage v Gate Charge

3.52.5

Basic Gate Charge Waveform

Switching Time Waveforms Switching Time Test Circuit

PROVISIONAL ISSUE A - JUNE 1999

Gate Charge Test Circuit

10

ZXMD63C02X

PACKAGE DIMENSIONS

D

5678

E

234

1

e X 6

A1

A

B

Conforms to JEDEC MO-187 Iss A

PAD LAYOUT DETAILS

H

C

DIM Millimetres Inches

MIN MAX MIN MAX

A 1.10 0.043

A1 0.05 0.15 0.002 0.006

B 0.25 0.40 0.010 0.016

C 0.13 0.23 0.005 0.009

D 2.90 3.10 0.114 0.122

θ°

e 0.65 BSC 0.0256 BSC

L

E 2.90 3.10 0.114 0.122

H 4.90 BSC 0.193 BSC

L 0.40 0.70 0.016 0.028

q° 0° 6° 0° 6°

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purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.

PROVISIONAL ISSUE A - JUNE 1999

12