Datasheet ZXMC3A18DN8 Datasheet (ZETEX)

查询ZXMC3A18DN8_05供应商

COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

SUMMARY
N-Channel = V
P-Channel = V

(BR)DSS

(BR)DSS

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

•

= 30V : RDS(on)= 0.025 ; ID= 7.6A

= -30V : RDS(on)= 0.035 ; ID= -6.3A

ZXMC3A18DN8

8

O

S

Fast switching speed

•

Low threshold

•

• Low gate drive

•

Low profile SOIC package

APPLICATIONS

•

Motor Drive

•

LCD backlighting

ORDERING INFORMATION

DEVICE REEL

SIZE

ZXMC3A18DN8TA 7” 12mm 500 units
ZXMC3A18DN8TC 13” 12mm 2500 units

TAPE

WIDTH

QUANTITY

PER REEL

DEVICE MARKING

•

ZXMC
3A18

Q1 = N-channel Q2 = P-channel

Top View

ISSUE 1 - MAY 2005

1

SEMICONDUCTORS

ZXMC3A18DN8

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current

= 10V; TA=25°C)

(V

GS

(VGS= 10V; TA=70°C)
(VGS= 10V; TA=25°C)

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)

(a) (d)

Power Dissipation at T

=25°C

A

(b)(d)
(b)(d)
(a)(d)

(b)

(c)

DSS

I

I

DM

I

I

SM

P

GS

D

S

D

Linear Derating Factor
Power Dissipation at T

=25°C

A

(a) (e)

P

D

Linear Derating Factor
Power Dissipation at T

=25°C

A

(b) (d)

P

D

Linear Derating Factor
Operating and Storage Temperature Range T

j,Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient
Junction to Ambient
Junction to Ambient

(a) (d)

(a) (e)

(b) (d)

R
R
R

⍜JA

⍜JA

⍜JA

30 -30 V

±20 ±20 V

7.6

6.1

5.8

-6.3

-5.0

-4.8

37 -30 A

3.6 3.2 A
37 30 A

1.25
10

1.8
14

2.1
17

-55 to +150 °C

100 °C/W

70 °C/W
60 °C/W

A
A
A

W

mW/°C

W

mW/°C

W

mW/°C

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Pulse width 300␮s, d⬍= 0.02. Refer to Transient Thermal Impedance

graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.

ISSUE 1 - MAY 2005

SEMICONDUCTORS

2

CHARACTERISTICS

ZXMC3A18DN8

ISSUE 1 - MAY 2005

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SEMICONDUCTORS

ZXMC3A18DN8

N-Channel
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance
Forward Transconductance

DYNAMIC

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

SWITCHING

Turn-On-Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

(1)

(1) (3)

(3)

(2) (3)

(1)

(3)

(3)

= 25°C unless otherwise stated)

amb

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

30 V ID= 250␮A, VGS=0V

0.5 ␮ AVDS=30V, VGS=0V
100

1.0 V ID= 250␮A, VDS=V

0.025

0.030

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

V

SD

t

rr

Q

rr

17.5 S VDS= 15V, ID= 5.8A

1800 pF
289 pF
178 pF

5.5 ns

8.7 ns
33 ns

8.5 ns

19.4 nC VDS= 15V, VGS=5V

36 nC

5.5 nC

7.0

0.95 V Tj=25°C, IS= 6A,

20.5 ns

41.5 nC

nA VGS=±20V, VDS=0V

⍀

VGS= 10V, ID= 5.8A

⍀

= 4.5V, ID= 5.3A

V

GS

= 25V, VGS=0V

V

DS

f=1MHz

V

= 15V, ID=6A

DD

≅ 6.0⍀,

R

G

= 10V

V

GS

= 3.5A

I

D

V

= 15V, VGS= 10V

DS

= 3.5A

I

D

nC

=0V

V

GS

=25°C, IF= 6A,

T

j

di/dt=100A/␮s

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

SEMICONDUCTORS

4

ISSUE 1 - MAY 2005

TYPICAL CHARACTERISTICS

ZXMC3A18DN8

ISSUE 1 - MAY 2005

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SEMICONDUCTORS

ZXMC3A18DN8

TYPICAL CHARACTERISTICS

SEMICONDUCTORS

ISSUE 1 - MAY 2005

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ZXMC3A18DN8

P-Channel
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC

Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State

Resistance
Forward Transconductance

DYNAMIC

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C

SWITCHING

Turn-On-Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Gate Charge Q

Total Gate Charge Q
Gate-Source Charge Q
Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time
Reverse Recovery Charge

(1)

(1) (3)

(3)

(2) (3)

(1)

(3)

(3)

= 25°C unless otherwise stated)

amb

(BR)DSS
DSS
GSS

GS(th)

R

DS(on)

-30 V ID= -250␮A, VGS=0V

-1.0 ␮AVDS=-30V, VGS=0V
100

-1.0 V ID= 250␮A, VDS=V

0.035

0.050

g

fs

iss

oss

rss

d(on)
r
d(off)
f

g

g
gs
gd

V

SD

t

rr

Q

rr

8.6 S VDS= -15V, ID= -4.8A

1603 pF
434 pF
388 pF

4.8 ns

9.5 ns
60 ns
38 ns
25 nC VDS= -15V, VGS= -5V

45 nC

5.1 nC

11.5

0.82 -0.95 V Tj=25°C, IS= -3.7,

32.5 ns

18.4 nC

nA VGS=±20V, VDS=0V

⍀

VGS= -10V, ID= -4.8A

⍀

= -4.5V, ID= -4.0A

V

GS

= -15V, VGS=0V

V

DS

f=1MHz

V

= -15V, ID=-1A

DD

≅ 6.0⍀,

R

G

= 10V

V

GS

= -4.8A

I

D

V

= -15V, VGS= -10V

DS

= -4.8A

I

D

nC

=0V

V

GS

=25°C, IF= -2.2,

T

j

di/dt=100A/␮s

GS

NOTES

(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

ISSUE 1 - MAY 2005

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SEMICONDUCTORS

ZXMC3A18DN8

PACKAGE OUTLINE

⍜

D

H

E

Pin 1

c

A

Seating Plane

L

b

e

A1

Controlling dimensions are in millimetres. Approximate conversions are given in inches

PACKAGE DIMENSIONS

DIM

Millimetres Inches

Min Max Min Max Min Max Min Max

DIM

A 1.35 1.75 0.053 0.069 e 1.27BSC 0.050BSC

A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020

D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010
H 5.80 6.20 0.228 0.244 ␪ 0° 8° 0° 8°
E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020
L 0.40 1.27 0.016 0.050 - ----

© Zetex Semiconductors plc 2005

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SEMICONDUCTORS

ISSUE 1 - MAY 2005

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