Datasheet ZXMC3A17DN8 Datasheet (ZETEX)

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COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET

SUMMARY
N-Channel : V
P-Channel : V

(BR)DSS

(BR)DSS

DESCRIPTION

This new generation of trench MOSFETs from Zetex utilizesauniquestructurethat
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.

FEATURES

Low on-resistance

•

= 30V : R

= -30V : R

= 0.050 ; ID= 5.4A

DS(on)

= 0.070 ; ID= -4.4A

DS(on)

ZXMC3A17DN8

8

O

S

Fast switching speed

•

Low threshold

•

Low gate drive

•

•

Low profile SOIC package

APPLICATIONS

•

Motor drive

•

LCD backlighting

Q1 = N-channel

ORDERING INFORMATION

DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL

ZXMC3A17DN8TA 7” 12mm 500 units

ZXMC3A17DN8TC 13” 12mm 2500 units

DEVICE MARKING

•

ZXMC
3A17

Q2 = P-channel

PINOUT

Top View

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SEMICONDUCTORS

ZXMC3A17DN8

ADVANCE INFORMATION

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL N-channel P-channel UNIT

Drain-Source Voltage V

Gate-Source Voltage V

Continuous Drain Current

= 10V; TA=25°C)

(V

GS

(VGS= 10V; TA=70°C)
(VGS= 10V; TA=25°C)

Pulsed Drain Current

(c)

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

(a) (d)

Power Dissipation at T

=25°C

A

(b)(d)

(b)(d)

(a)(d)

(b)

(c)

Linear Derating Factor

(a) (e)

Power Dissipation at T

=25°C

A

Linear Derating Factor

(b) (d)

Power Dissipation at T

=25°C

A

Linear Derating Factor

Operating and Storage Temperature Range T

DSS

GS

I

D

I

DM

I

S

I

SM

P

D

P

D

P

D

j,Tstg

30 -30 V

±20 ±20 V

5.4

4.3

4.1

-4.4

-3.6

-3.4

23 -20 A

2.6 -2.5 A

23 -20 A

1.25

10

1.8

14

2.1

17

-55 to +150 °C

A

W

mW/°C

W

mW/°C

W

mW/°C

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient

Junction to Ambient

Junction to Ambient

NOTES:

(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300␮s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with two active die running at equal power.

SEMICONDUCTORS

(a) (d)

(a) (e)

(b) (d)

R

R

R

⍜JA

⍜JA

⍜JA

100 °C/W

70 °C/W

60 °C/W

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ADVANCE INFORMATION

ZXMC3A17DN8

CHARACTERISTICS

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SEMICONDUCTORS

ZXMC3A17DN8

N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN.

STATIC

Drain-Source Breakdown
Voltage

Zero Gate Voltage Drain
Current

Gate-Body Leakage I

Gate-Source Threshold
Voltage

Static Drain-Source On-State

Resistance

(1)

Forward

Transconductance

DYNAMIC

(3)

(1) (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

SWITCHING

(2) (3)

Turn-On-Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Charge Q

Total Gate Charge Q

Gate-Source Charge Q

Gate-Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time

(1)

(3)

Reverse Recovery Charge

(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

(3)

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

g

fs

iss

oss

rss

d(on)

r

d(off)

f

g

g

gs

gd

V

SD

t

rr

Q

rr

= 25°C unless otherwise stated)

amb

TYP.

30 V ID=250␮A, VGS=0V

1.0 V ID=250␮A, VDS=V

10 S VDS= 10V, ID=7.8A

600 pF

104 pF

58.5 pF

2.9 ns

6.4 ns

16 ns

11.2 ns

6.9 nC VDS= 15V, VGS=5V

12.2 nC

1.7 nC

2.4

0.85 0.95 V Tj=25°C, IS=3.2A,

18.8 ns

14.1 nC

ADVANCE INFORMATION

MAX. UNIT CONDITIONS

0.5 ␮AVDS=30V, VGS=0V

100

0.050

0.065⍀⍀

nA VGS=±20V, VDS=0V

VGS= 10V, ID=7.8A

=4.5V,ID=6.8A

V

GS

= 25V, VGS=0V

V

DS

f=1MHz

V

=15V,ID=3.5A

DD

≅ 6.0⍀,

R

G

=10V

V

GS

=3.5A

I

D

V

= 15V, VGS=10V

DS

=3.5A

I

nC

D

=0V

V

GS

=25°C, IF=3.5A,

T

j

di/dt=100A/␮s

GS

SEMICONDUCTORS

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ADVANCE INFORMATION

ZXMC3A17DN8

P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown

Voltage

Zero Gate Voltage Drain

Current

Gate-Body Leakage I

Gate-Source Threshold

Voltage

Static Drain-Source

On-State Resistance

Forward
Transconductance

DYNAMIC

(3)

(1)

(1) (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer
Capacitance

SWITCHING

(2) (3)

Turn-On-Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Gate Charge Q

Total Gate Charge Q

Gate-Source Charge Q

Gate Drain Charge Q

SOURCE-DRAIN DIODE

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

(1)

(3)

V

(BR)DSS

I

DSS

GSS

V

GS(th)

R

DS(on)

g

fs

iss

oss

C

rss

d(on)

r

d(off)

f

g

g

gs

gd

V

SD

t

rr

(3)

Q

rr

= 25°C unless otherwise stated)

amb

-30 V ID= -250␮A, VGS=0V

-1.0 ␮AVDS= -30V, VGS=0V

100 nA VGS=±20V, VDS=0V

-1.0 V ID= -250␮A, VDS=V

0.070

0.110⍀⍀

VGS= -10V, ID=-3.2A

= -4.5V, ID= -2.5A

V

GS

6.4 S VDS= -15V, ID= -3.2A

630 pF

= -15V, VGS=0V

V

113 pF

78 pF

1.7 ns

2.9 ns

29.2 ns

8.7 ns

DS

f=1MHz

V

=-15V,ID=-1A

DD

≅ 6.0⍀,

R

G

= -10V

V

GS

8.3 nC VDS= -15V, VGS=-5V

= -3.2A

I

D

15.8 nC

1.8 nC

2.8 nC

V

= -15V, VGS=

DS

-10V

= -3.2A

I

D

-0.85 -0.95 V Tj=25°C, IS= -2.5A,

=0V

V

GS

19.5 ns

16.3 nC

=25°C, IS= -1.7A,

T

j

di/dt=100A/␮s

GS

NOTES:

(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

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SEMICONDUCTORS

ZXMC3A17DN8

ADVANCE INFORMATION

N-CHANNEL TYPICAL CHARACTERISTICS

SEMICONDUCTORS

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ADVANCE INFORMATION

N-CHANNEL TYPICAL CHARACTERISTICS

ZXMC3A17DN8

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SEMICONDUCTORS

ZXMC3A17DN8

ADVANCE INFORMATION

P-CHANNEL TYPICAL CHARACTERISTICS

SEMICONDUCTORS

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ADVANCE INFORMATION

P-CHANNEL TYPICAL CHARACTERISTICS

ZXMC3A17DN8

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ZXMC3A17DN8

SO8 PACKAGE OUTLINE (Conforms to JEDEC MS-012AA Iss. C)

Controlling dimensions are in millimeters. Approximate conversions are given in inches

PACKAGE DIMENSIONS

DIM

Millimeters Inches

Min Max Min Max Min Max Min Max

DIM

Millimeters Inches

A 1.35 1.75 0.053 0.069 e 1.27 BSC 0.050 BSC

A1 0.10 0.25 0.004 0.010 b 0.33 0.51 0.013 0.020

D 4.80 5.00 0.189 0.197 c 0.19 0.25 0.008 0.010

H 5.80 6.20 0.228 0.244 ⍜ 0° 8° 0° 8°

E 3.80 4.00 0.150 0.157 h 0.25 0.50 0.010 0.020

L 0.40 1.27 0.016 0.050 - ----

© Zetex Semiconductors plc 2005

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