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20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXM64P02XTA 7 12mm embossed 1000 units
ZXM64P02XTC 13 12mm embossed 4000 units
=-20V; R
DS(ON)
(inches)
=0.090V; ID= -3.5A
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM64P02X
MSOP8
S
S
S
G
1234
Top View
8
7
65
D
D
D
D
DEVICE MARKING
• ZXM4P02
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ZXM64P02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V
(V
=4.5V; TA=25°C)(b)
GS
=4.5V; TA=70°C)(b)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I
Pulsed Source Current (Body Diode)(c) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
Operating and Storage Temperature Range T
I
D
DM
S
SM
P
P
DSS
GS
D
D
j:Tstg
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
θJA
θJA
-20 V
± 12
-3.5
-2.8
-19 A
-2.0 A
-19 A
1.1
8.8
mW/°C
1.8
14.4
mW/°C
-55 to +150 °C
113 °C/W
70 °C/W
V
A
W
W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
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CHARACTERISTICS
ZXM64P02X
100
Refer Note (a)
10
DC
100ms
10ms
1ms
100us
1s
1
1
- Drain Current (A)
D
-I
100m
0.1 10 100
-VDS - Drain-Source Voltage (V)
Safe Operating Area
80
Refer Note (b)
60
40
D=0.5
20
D=0.2
Thermal Resistance (°C/W)
D=0.1
Sing le Pulse
0
0.0001 100
0.1
Pulse Width (s)
Transient Thermal Impedance
2.0
1.5
1.0
0.5
0
Max Power Dissipation (Watts)
080160
120
Refer N ote (a)
90
D=0.5
60
30
D=0.2
0
0.0001
D=0.1
Single Pulse
Themal Resistance (°C/W)
1010.010.001 1001010.10.010.001
Transient Thermal Impedance
Refer Note (b)
Refer Note (a)
T - Temperature (°C)
Derating Curve
Pulse Width (s)
140120100604020
1000
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ZXM64P02X
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance
(1)
Forward Transconductance (3) g
(BR)DSS
DSS
GSS
GS(th)
R
DS(on)
fs
-20 V
-1
±100
-0.7 V
0.090
0.13
µA
nA
Ω
Ω
=-250µA, VGS=0V
I
D
VDS=-20V, VGS=0V
VGS=± 12V, VDS=0V
=-250µA, VDS= V
I
D
VGS=-4.5V, ID=-2.4A
=-2.7V, ID=-1.2A
V
GS
2.6 S VDS=-10V,ID=-1.2A
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
iss
oss
rss
900 pF
350 pF
150 pF
=-15 V, VGS=0V,
V
DS
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate Drain Charge Q
d(on)
r
d(off)
f
g
gs
gd
5.6 ns
12.3 ns
45.5 ns
40.0 ns
6.9 nC
1.3 nC
2.5 nC
V
=-10V, ID=-2.4A
DD
R
=6.0Ω, RD=4.0Ω
G
(Refer to test circuit)
=-16V,VGS=-4.5V,
V
DS
=-2.4A
I
D
(Refer to test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
Reverse Recovery Time (3) t
Reverse Recovery Charge(3) Q
SD
rr
rr
46.0 ns Tj=25°C, IF=-2.4A,
35.0 nC
-0.95 V Tj=25°C, IS=-2.4A,
=0V
V
GS
di/dt= 100A/µs
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
GS
PROVISIONAL ISSUE A - JULY 1999
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TYPICAL CHARACTERISTICS
ZXM64P02X
100
+25 C
5V 4.5V 4V 3.5V 3V
10
1
- Drain Current (A)
D
-I
0.1
0.1 10 100
-VDS - Drain-Source Voltage (V)
1
Output Characteristics
100
VDS=-10V
10
T=150°C
1
- Drain Current (A)
D
-I
0.1
0.5 2 3.5
-VGS- Gate-Source Voltage (V)
T=25°C
1.5 312.5
Typical Transfer Characteristics
-VGS
2.5V
2V
1.5V
100
+150°C
5V 4.5V 4V 3.5V
10
1
- Drain Current (A)
D
-I
0.1
0.1 100
-VDS - Drain-Source Voltage (V)
101
Output Characteristics
1.6
GS(th)
and V
DS(on)
Normalised R
1.4
1.2
1.0
0.8
0.6
0.4
Tj- Junction Temperature (°C)
0150-50 100
Normalised R
DS(on)
RDS(on)
VGS(th)
and V
v Temperature
-VGS
3V
2.5V
2V
1.5V
VGS=-4.5V
ID=-2.4A
VGS=VDS
ID=-250uA
GS(th)
20050-100
10
1
VGS=-2V
0.1
0.01
0.1 10 100 0.2 0.8 1.4
- Drain-Source On-Resistance (Ω)
DS(on)
R
On-Resistance v Drain Current
VGS=-5V
1
-ID- Drain Current (A)
PROVISIONAL ISSUE A - JULY 1999
141
100
10
1
T=150°C
T=25°C
- Reverse Drain Current (A)
SD
0.1
-I
0.4 1.00.6 1.2
-VSD- Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXM64P02X
TYPICAL CHARACTERISTICS
2000
1800
1600
1400
1200
1000
800
600
400
C - Capacitance (pF)
200
0
0.1 10 100 0 3 6
Ciss
Coss
Crss
1
Vgs=0V
f=1Mhz
-VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
5
ID=- 2.4A
4.5
- Gate-Source Voltage (V)
GS
-V
4
3.5
3
2.5
2
1.5
1
0.5
0
VDS=-15V
2514
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
Basic Gate Charge Waveform
Switching Time Waveforms
PROVISIONAL ISSUE A - JULY 1999
Gate Charge Test Circuit
Switching Time Test Circuit
142
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ZXM64P02X
PACKAGE DIMENSIONS
D
5678
E
234
1
e X 6
A1
A
B
Conforms to JEDEC MO-187 Iss A
PAD LAYOUT DETAILS
H
C
DIM Millimetres Inches
MIN MAX MIN MAX
A 1.10 0.043
A1 0.05 0.15 0.002 0.006
B 0.25 0.40 0.010 0.016
C 0.13 0.23 0.005 0.009
D 2.90 3.10 0.114 0.122
θ°
e 0.65 BSC 0.0256 BSC
L
E 2.90 3.10 0.114 0.122
H 4.90 BSC 0.193 BSC
L 0.40 0.70 0.016 0.028
q° 0° 6° 0° 6°
Zetex plc.
Fields New Road, Chadderton, Oldha m, OL9 -8NP, Unit ed Kin gdom .
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong Zetex plc 1999
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JULY 1999
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