Datasheet ZXM62P03E6TC, ZXM62P03E6TA Datasheet (Zetex)

30V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT23-6 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXM62P03E6TA 7 8mm embossed 3000 units

ZXM62P03E6TC 13 8mm embossed 10000 units

=-30V; R

DS(ON)

(inches)

=0.15V; ID=-2.6A

TAPE WIDTH (mm) QUANTITY

PER REEL

ZXM62P03E6

SOT23-6

Top View

DEVICE MARKING

• 2P03

PROVISIONAL ISSUE A - JULY 1999

113

ZXM62P03E6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V

(V

=-10V; TA=25°C)(b)

GS

=-10V; TA=70°C)(b)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I

Pulsed Source Current (Body Diode)(c) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

DSS

GS

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

θJA

θJA

-30 V

± 20

-2.6

-2.0

-13 A

-1.9 A

-13 A

1.1

8.8

mW/°C

1.7

13.6

mW/°C

-55 to +150 °C

113 °C/W

73 °C/W

V
A

W

W

PROVISIONAL ISSUE A - JULY 1999

114

CHARACTERISTICS

ZXM62P03E6

100

Refer N ote (a)

10

1

- Drain Current (A)

D

-I

0.1

DC

1s

100ms

10ms

1ms

100us

0.1 10 100

1

-VDS - Drain-Source Voltage (V)

Safe Operating Area

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 0.1 100

D=0.5

D=0.2

D=0.1

D=0. 05

Refer Note (b)

Single Pulse

0.01 100.001 1

Pulse Width (s)

Transient Thermal Impedance

2

1.5

Refer Note (b)

1

Refer Note (a)

0.5

0

Max Power Dissipation (Watts)

080160

60 14020 40 100 120

T - Temperature (°)

Derating Curve

120

100

80

60

40

20

Thermal Resistance (°C/W)

0

0.0001 10000.001 0.01 0.1 1 10

D=0.5

D=0.2

D=0.1

D=0.05

Refer Note (a)

Pulse Width (s)

Single Pulse

100

Transient Thermal Impedance

PROVISIONAL ISSUE A - JULY 1999

115

ZXM62P03E6

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (3) g

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

-30 V

-1
±100

-1.0 V

0.15

0.23

µA

nA

Ω
Ω

=-250µA, VGS=0V

I

D

VDS=-30V, VGS=0V

VGS=± 20V, VDS=0V

=-250µA, VDS= V

I

D

VGS=-10V, ID=-1.6A

=-4.5V, ID=-0.8A

V

GS

1.1 S VDS=-10V,ID=-0.8A

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

iss

oss

rss

330 pF

120 pF

45 pF

=-25 V, VGS=0V,

V

DS

f=1MHz

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate Drain Charge Q

d(on)

r

d(off)

f

g

gs

gd

2.8 ns

6.4 ns

13.9 ns

10.3 ns

10.2 nC

1.5 nC

3nC

V

=-15V, ID=-1.6A

DD

R

=6.2Ω, RD=25Ω

G

(Refer to test circuit)

=-24V,VGS=-10V,

V

DS

=-1.6A

I

D

(Refer to test circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge(3) Q

SD

rr

rr

19.9 ns Tj=25°C, IF=-1.6A,

13 nC

-0.95 V Tj=25°C, IS=-1.6A,

=0V

V

GS

di/dt= 100A/µs

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

GS

PROVISIONAL ISSUE A - JULY 1999

116

TYPICAL CHARACTERISTICS

ZXM62P03E6

100

+25°C

6V7V8V10V

-VGS

10

1

- Drain Current (A)

D

-I

0.1

0.1 100

110

5V

4.5V
4V

3.5V

3V

2.5V

-VDS - Drain-Source Voltage (V)

Output Characteristics

100

VDS=-10V

10

T=150°C

1

- Drain Current (A)

D

-I

0.1

T=25° C

2536

147

-VGS- Gate-Source Voltage (V)

Typical Transfer Characteristics

100

+150 C

10

1

- Drain Current (A)

D

-I

0.1

0.1 10 100

10V8V7V 6V

1

-VDS - Drain-Source Voltage (V)

Output Characteristics

1.8

GS(th)

1.6

and V

DS(on)

Normalised R

1.4

1.2

1.0

0.8

0.6

0.4

RDS(on)

VGS(th)

Tj- Junction Temperature (°C)

Normalised RDS(on) and VGS(th)

v Temperature

-VGS

VGS=-10V
ID=-1.6A

VGS=VDS

ID=-250uA

1500-50 100

5V

4V

3V

4.5V

3.5V

2.5V

20050-100

100

10

1

VGS=-3V

VGS=-4.5V

0.1

0.1 10 100 0.2 0.8 1.4

- Drain-Source On-Resistance (Ω)

DS(on)

R

-ID - Drain Current (A)

On-Resistance v Drain Current

VGS=-10V

1

PROVISIONAL ISSUE A - JULY 1999

117

100

10

1

T=150°C

- Reverse Drain Current (A)

SD

-I

0.1

0.4 1.00.6 1.2

T=25°C

-VSD - Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

ZXM62P03E6

TYPICAL CHARACTERISTICS

600

500

400

300

200

C - Capacitance (pF)

100

0

0.1 10 100 0 4 10

-VDS- Drain Source Voltage (V)

1

Ciss

Coss

Crss

Vgs=0V
f=1Mhz

Capacitance v Drain-Source Voltage

10

ID=-1.6A

9
8

- Gate-Source Voltage (V)

GS

-V

7
6
5
4
3
2
1
0

123 5

VDS=-15V

VDS=-24V

Q -Charge (nC)

Gate-Source Voltage v Gate Charge

76

89

Basic Gate Charge Waveform

Switching Time Waveforms

PROVISIONAL ISSUE A - JULY 1999

Gate Charge Test Circuit

Switching Time Test Circuit

118

ZXM62P03E6

PACKAGE DIMENSIONS

b e

E

e1

D

AA2

DIM Millimetres Inches

Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
e 0.95 REF 0.037 REF
e1 1.90 REF 0.074 REF
L 0° 10° 0° 10°

a

A1

L

DATUM A

C

PAD LAYOUT DETAILS

2

E1

Zetex plc.
Fields New Road, Chadderton, Oldha m, OL9 -8NP, Unit ed Kin gdom .
Telephone: [phone] (Sales), (44)161 622 4444 (General Enquiries)
Fax: [phone]

Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by

Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong Zetex plc 1999
Telefon: [phone] Telephone: [phone] Telephone:[phone]
Fax: [phone] Fax: [phone] Fax: [phone] Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.

PROVISIONAL ISSUE A - JULY 1999

120