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查询ZXM62N03E6供应商
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXM62N03E6TA 7 8mm embossed 3000 units
ZXM62N03E6TC 13 8mm embossed 10000 units
=30V; R
DS(ON)
(inches)
ZXM62N03E6
=0.11V; ID=3.2A
SOT23-6
TAPE WIDTH (mm) QUANTITY
PER REEL
Top View
DEVICE MARKING
• 2N03
PROVISIONAL ISSUE A - MAY 1999
97
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ZXM62N03E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
(V
=10V; TA=25°C)(b)
GS
=10V; TA=70°C)(b)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
DSS
GS
I
D
DM
S
SM
P
D
P
D
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
θJA
θJA
30 V
± 20
3.2
V
A
2.6
18 A
2.1 A
18 A
1.1
8.8
1.7
13.6
W
mW/°C
W
mW/°C
113 °C/W
73 °C/W
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CHARACTERISTICS
ZXM62N03E6
100
Refer Note (a)
10
1
- Drain Current (A)
D
I
0.1
DC
1s
100ms
10ms
1ms
100µs
0.1 10 100
1
VDS- Drain-Source Voltage (V)
Safe Operating Area
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 0.1 100
D=0.5
D=0.2
D=0.1
D=0.05
Refer Note (b)
Single Pulse
0.01 100.001 1
Pulse Width (s)
Transient Thermal Impedance
2
1.5
Refer No te (b)
1
Refer Note (a)
0.5
0
Max Power Dissipation (Watts)
080160
60 14020 40 100 120
T - Temperature (°)
Derating Curve
120
100
80
60
40
20
Thermal Resistance (°C/W)
0
0.0001 10000.001 0.01 0.1 1 10
D=0.5
D=0.2
D=0.1
D=0.05
Refer Note (a)
Pulse Width (s)
Single Pulse
100
Transient Thermal Impedance
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ZXM62N03E6
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance (1) R
Forward Transconductance g
(BR)DSS
DSS
GSS
GS(th)
DS(on)
fs
30 V
1
100 nA
1.0 V
0.11
0.15
µA
Ω
Ω
=250µA, VGS=0V
I
D
VDS=30V, VGS=0V
=± 20V, VDS=0V
V
GS
=250µA, VDS= V
I
D
VGS=10V, ID=2.2A
=4.5V, ID=1.1A
V
GS
1.1 S VDS=10V,ID=1.1A
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
iss
oss
rss
380 pF
90 pF
30 pF
=25 V, VGS=0V,
V
DS
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate Drain Charge Q
d(on)
r
d(off)
f
g
gs
gd
2.9 ns
5.6 ns
11.7 ns
6.4 ns
9.6 nC
1.7 nC
2.8 nC
V
=15V, ID=2.2A
DD
R
=6.0Ω, RD=6.7Ω
G
(refer to test
circuit)
=24V,VGS=10V,
V
DS
=2.2A (refer to
I
D
test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q
SD
rr
rr
18.8 ns Tj=25°C, IF=2.2A,
11.4 nC
0.95 V Tj=25°C, IS=2.2A,
=0V
V
GS
di/dt= 100A/µs
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
GS
PROVISIONAL ISSUE A - MAY 1999
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TYPICAL CHARACTERISTICS
ZXM62N03E6
100
+25°C
6V7V8V10V
10
1
- Drain Current (A)
D
I
0.1
0.1 100
110
VGS
5V
4.5V
4V
3.5V
3V
VDS - Drain-Source Voltage (V)
Output Characteristics
100
VDS=10V
10
T=150 C
T=25 C
1
ID - Drain Current (A)
0.1
24 6.5
2.5 53.5 5.5
364.5
VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
100
+150°C
10V 8V 7V 6V
10
1
- Drain Current (A)
D
I
0.1
0.1 10 100
1
VDS - Drain-Source Voltage (V)
Output Characteristics
1.6
GS(th)
and V
DS(on)
Normalised R
1.4
1.2
1.0
0.8
0.6
0.4
RDS(on)
VGS(th)
Tj - Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
VGS=10V
ID=2.2A
VGS=VDS
ID=250uA
1500-50 100
VGS
5V
3V
4.5V
4V
3.5V
20050-100
10
1
VGS=3V
0.1
0.01
0.1 10 100 0.2 0.8 1.4
- Drain-Source On-Resistance (Ω)
DS(on)
R
On-Resistance v Drain Current
VGS=4.5V
1
ID - Drain Current (A)
PROVISIONAL ISSUE A - MAY 1999
VGS=10V
101
100
10
1
T=150°C
- Reverse Drain Current (A)
SD
I
0.1
0.4 1.00.6 1.2
T=25° C
VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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ZXM62N03E6
TYPICAL CHARACTERISTICS
500
500
400
300
200
100
C - Capacitance (pF)
0
0.1 10 100 0 4 8
1
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
10
ID=2.2A
9
8
- Gate-Source Voltage (V)
GS
V
7
6
5
4
3
2
1
0
123 5
VDS=15V
VDS=24V
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
76
Basic Gate Charge Waveform
Switching Time Waveforms
PROVISIONAL ISSUE A - MAY 1999
Gate Charge Test Circuit
Switching Time Test Circuit
102
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ZXM62N03E6
PACKAGE DIMENSIONS
b e
E
e1
D
AA2
DIM Millimetres Inches
Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
a
A1
L
DATUM A
C
PAD LAYOUT DETAILS
2
E1
Zetex plc.
Fields New Road, Chadderton, Oldha m, OL9 -8NP, Unit ed Kin gdom .
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong Zet ex plc 1999
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - MAY 1999
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