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20V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilise a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package
APPLICATIONS
• DC - DC Converters
• Power Management Functions
• Disconnect switches
• Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
ZXM62N02E6TA 7 8mm embossed 3000 units
ZXM62N02E6TC 13 8mm embossed 10000 units
=20V; R
DS(ON)
(inches)
= 0.1V; ID=3.2A
TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM62N02E6
SOT23-6
Top View
DEVICE MARKING
• 2N02
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ZXM62N02E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate Source Voltage V
Continuous Drain Current (V
(V
=4.5V; TA=25°C)(b)
GS
=4.5V; TA=70°C)(b)
GS
Pulsed Drain Current (c) I
Continuous Source Current (Body Diode) (b) I
Pulsed Source Current (Body Diode) I
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
=25°C (a)
A
=25°C (b)
A
DSS
GS
I
D
DM
S
SM
P
D
P
D
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R
Junction to Ambient (b) R
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
θJA
θJA
20 V
± 12
3.2
V
A
2.6
18 A
2.1 A
18 A
1.1
8.8
1.7
13.6
W
mW/°C
W
mW/°C
113 °C/W
73 °C/W
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CHARACTERISTICS
ZXM62N02E6
100
10
- Drain Current (A)
D
I
0.1
Refer Note (a)
1
DC
1s
100ms
10ms
1ms
100us
0.1 10 100
1
VDS - Drain-Source Voltage (V)
Safe Operating Area
80
60
40
20
Thermal Resistance (°C/W)
0.0001 0.1 100
Refer Note (b)
D=0.5
D=0.2
D=0.1
D=0.05
0
Single Pulse
0.01 100.001 1
Pulse Width (s)
Transient Thermal Impedance
2
1.5
Refer Not e (b)
1
0.5
0
Max Power Dissipation (Watts)
0 80 160
Refer Not e (a)
60 14020 40 100 120
T - Temperature (°C)
Derating Curve
120
100
80
60
40
20
Thermal Resistance (°C/W)
Refer Note (a)
D=0.5
D=0.2
D=0.1
D=0.05
0
0.0001 10000.001 0.01 0.1 1 10
Single Pulse
Pulse Width (s)
Transient Thermal Impedance
100
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ZXM62N02E6
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
Zero Gate Voltage Drain Current I
Gate-Body Leakage I
Gate-Source Threshold Voltage V
Static Drain-Source On-State Resistance (1) R
Forward Transconductance g
(BR)DSS
DSS
GSS
GS(th)
DS(on)
fs
20 V
1
100 nA
0.7 V
0.1
0.125
µA
Ω
Ω
=250µA, VGS=0V
I
D
VDS=20V, VGS=0V
=± 12V, VDS=0V
V
GS
=250µA, VDS= V
I
D
VGS=4.5V, ID=2.2A
=2.7V, ID=1.1A
V
GS
3.2 S VDS=10V,ID=1.1A
DYNAMIC (3)
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
iss
oss
rss
460 pF
150 pF
50 pF
=15 V, VGS=0V,
V
DS
f=1MHz
SWITCHING(2) (3)
Turn-On Delay Time t
Rise Time t
Turn-Off Delay Time t
Fall Time t
Total Gate Charge Q
Gate-Source Charge Q
Gate Drain Charge Q
d(on)
r
d(off)
f
g
gs
gd
4.0 ns
10.4 ns
16.9 ns
8.0 ns
6.3 nC
1.5 nC
2.5 nC
V
=10V, ID=2.2A
DD
R
=6.0Ω, RD=4.4Ω
G
(refer to test
circuit)
=16V,VGS=4.5V,
V
DS
=2.2A (refer to
I
D
test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
Reverse Recovery Time (3) t
Reverse Recovery Charge (3) Q
SD
rr
rr
17.5 ns Tj=25°C, IF=2.2A,
8.6 nC
0.95 V Tj=25°C, IS=2.2A,
=0V
V
GS
di/dt= 100A/µs
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
GS
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TYPICAL CHARACTERISTICS
ZXM62N02E6
100
+25 C
4V
3.5V
4.5V5V
10
1
- Drain Current (A)
D
I
0.1
0.1 100
110
3V
2.5V
2V
VDS- Drain-Source Voltage (V)
Output Characteristics
100
VDS=10V
10
T=150°C
T=25°C
1
- Drain Current (A)
D
I
0.1
12.54
1.5 323.5
VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
100
+150 C
5V 4.5VVGS
4V
10
1
- Drain Current (A)
D
I
0.1
0.1 10 100
1
VDS- Drain-Source Voltage (V)
Output Characteristics
1.8
GS(th)
and V
DS(on)
Normalised R
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS(th)
RDS(on)
Tj - Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
VGS
3.5V
3V
2V
1.5V
V
GS=VDS
ID=250uA
1500-50 100
2.5V
GS
V
ID=2.2A
=4.5V
20050-100
10
1
GS
V
=3V
V
0.1
0.01
0.1 10 100 0.2 0.8 1.6
- Drain-Source On-Resistance (Ω)
DS(on)
R
On-Resistance v Drain Current
GS=5V
1
ID - Drain Current (A)
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93
100
10
1
T=150°C
T=25°C
- Reverse Drain Current (A)
SD
0.1
I
0.4 1.00.6 1.2
VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.4
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ZXM62N02E6
TYPICAL CHARACTERISTICS
900
800
700
600
500
400
300
200
C - Capacitance (pF)
100
0
0.1 10 100 0 4
1
Ciss
Coss
Crss
Vgs=0V
f=1Mhz
- Gate-Source Voltage (V)
V
GS
4.5
3.5
2.5
1.5
0.5
5
ID=2.2A
4
3
2
1
0
123 5
VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
VDS=16V
Q -Charge (nC)
6
Basic Gate Charge Waveform
Switching Time Waveforms
PROVISIONAL ISSUE A - JULY 1999
Gate Charge Test Circuit
Switching Time Test Circuit
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ZXM62N02E6
PACKAGE DIMENSIONS
b e
E
e1
D
AA2
DIM Millimetres Inches
Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
a
A1
L
DATUM A
C
PAD LAYOUT DETAILS
2
E1
Zetex plc.
Fields New Road, Chadderton, Oldha m, OL9 -8NP, Unit ed Kin gdom .
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong Zet ex plc 1999
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JULY 1999
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