Datasheet ZXM61P03F Datasheet (ZETEX)

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30V P-CHANNEL ENHANCEMENT MODE MOSFET

SUMMARY
V

(BR)DSS

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.

FEATURES

• Low on-resistance

• Fast switching speed

• Low threshold

• Low gate drive

• SOT23 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Disconnect switches

• Motor control

ORDERING INFORMATION

DEVICE REEL SIZE

ZXM61P03FTA 7 8mm embossed 3000 units

ZXM61P03FTC 13 8mm embossed 10000 units

=-30V; R

DS(ON)

(inches)

ZXM61P03F

=0.35V; ID=-1.0A

SOT23

TAPE WIDTH (mm) QUANTITY

PER REEL

Top View

DEVICE MARKING

• P03

PROVISIONAL ISSUE A - JULY 1999

81

ZXM61P03F

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
Gate- Source Voltage V
Continuous Drain Current (V

(V

=-10V; TA=25°C)(b)

GS

=-10V; TA=70°C)(b)

GS

Pulsed Drain Current (c) I
Continuous Source Current (Body Diode)(b) I

Pulsed Source Current (Body Diode)(c) I

Power Dissipation at T
Linear Derating Factor

Power Dissipation at T
Linear Derating Factor

=25°C (a)

A

=25°C (b)

A

Operating and Storage Temperature Range T

I

D

DM

S

SM

P

P

DSS

GS

D

D

j:Tstg

THERMAL RESISTANCE

PARAMETER SYMBOL VALUE UNIT

Junction to Ambient (a) R

Junction to Ambient (b) R

NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

θJA

θJA

-30 V

± 20

-1.1

-0.9

-4.3 A

-0.88 A

-4.3 A
625

5

806

6.4

mW

mW/°C

mW

mW/°C

-55 to +150 °C

200 °C/W

155 °C/W

V
A

PROVISIONAL ISSUE A - JULY 1999

82

CHARACTERISTICS

ZXM61P03F

- Drain Current (A)

D

-I

10

1

100m

10m

Refer Note (a)

DC

1s

100ms

10ms

1ms

100us

0.1 100

-VDS - Drain-Source Voltage (V)

101

Safe Operating Area

180
160
140
120
100

80
60
40
20

Thermal Resistance (°C/W)

0.0001 0.1 10

Refer Note (b)

D=0.5

D=0.2

D=0.1

D=0.05

0

0.001 0.01 1

Pulse Width (s)

Single Pulse

Transient Thermal Impedance

1.0

0.8

0.6

0.4

0.2

0

Max Power Dissipation (Watts)

080160

20 40 60 100 120 140

T - Temperature (°C)

Refer Note (b)
Refer Note (a)

Derating Curve

240

200

160

120

80

40

Thermal Resistance (°C/W)

0

0.0001

Refer N ote (a)

D=0.5

D=0.2

D=0 .1

D=0.05

0.001 0.01 0.1 1 100

Single Pulse

Pulse Width (s)

10 1000

Transient Thermal Impedance

PROVISIONAL ISSUE A - JULY 1999

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ZXM61P03F

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage V

Zero Gate Voltage Drain Current I

Gate-Body Leakage I

Gate-Source Threshold Voltage V

Static Drain-Source On-State Resistance
(1)

Forward Transconductance (3) g

(BR)DSS

DSS

GSS

GS(th)

R

DS(on)

fs

-30 V

-1
±100

-1.0 V

0.35

0.55

µA

nA

Ω
Ω

=-250µA, VGS=0V

I

D

VDS=-30V, VGS=0V

VGS=± 20V, VDS=0V

=-250µA, VDS= V

I

D

VGS=-10V, ID=-0.6A

=-4.5V, ID=-0.3A

V

GS

0.44 S VDS=-10V,ID=-0.3A

DYNAMIC (3)

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

iss

oss

rss

140 pF

45 pF

20 pF

=-25 V, VGS=0V,

V

DS

f=1MHz

SWITCHING(2) (3)

Turn-On Delay Time t

Rise Time t

Turn-Off Delay Time t

Fall Time t

Total Gate Charge Q

Gate-Source Charge Q

Gate Drain Charge Q

d(on)

r

d(off)

f

g

gs

gd

1.9 ns

2.9 ns

8.9 ns

5.0 ns

4.8 nC

0.62 nC

1.3 nC

V

=-15V, ID=-0.6A

DD

R

=6.2Ω, RD=25Ω

G

(Refer to test circuit)

=-24V,VGS=-10V,

V

DS

=-0.6A

I

D

(Refer to test circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1) V

Reverse Recovery Time (3) t

Reverse Recovery Charge(3) Q

SD

rr

rr

14.8 ns Tj=25°C, IF=-0.6A,

7.7 nC

-0.95 V Tj=25°C, IS=-0.6A,

=0V

V

GS

di/dt= 100A/µs

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.

GS

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TYPICAL CHARACTERISTICS

ZXM61P03F

10

+25°C

1

- Drain Current (A)

D

-I

100m

0.1 1 100

10V

8V

6V

7V

9V

5V

10

-VDS- Drain-Source Voltage (V)

Output Characteristics

10

T=+150°C

T=+25°C

- Drain Current (A)

D

-I

1

100m

10m

1.5 2.5

-VGS - Gate-Source Voltage (V)

Typical Transfer Characteristics

-VGS

VDS=-10V

10

+150°C

4V

1

3V

- Drain Current (A)

D

-I

100m

0.1 10 100

10V

7V

8V

9V

6V

-VGS

5V

4V

3V

-VDS- Drain-Source Voltage (V)

Output Characteristics

GS(th)

and V

DS(on)

Normalised R

1.7

1.5

1.3

1.1

0.9

0.7

0.5

03.5 4.5

Tj - Junction Temperature (°C)

RDS(on)

VGS(th)

VGS=-10V

ID=-0.6A

VGS=VDS

ID=-250uA

+200+100-100

Normalised RDS(on) and VGS(th)

v Temperature

)

10

Ω

Vg=-3V

1

Vg=-5V

100m

0.1 1 10 0.2 0.8 1.4

- Drain-Source On-Resistance (

DS(on)

R

-ID - Drain Current (A)

On-Resistance v Drain Current

PROVISIONAL ISSUE A - JULY 1999

Vg=-10V

85

10

1

100m

T=+150°C

T=+25°C

- Reverse Drain Current (A)

SD

10m

-I

0.4 0.6 1.0 1.2

-VSD - Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage

ZXM61P03F

TYPICAL CHARACTERISTICS

300

250

200

150

100

C - Capacitance (pF)

50

0

0.1 10 100 0 3

-V

1

- Drain Source Voltage (V)

DS

Vgs=0V

f=1MHz

Ciss

Coss

Crss

Capacitance v Drain-Source Voltage

14

ID=-0.6A

12

10

8

6

4

- Gate-Source Voltage (V)

2

GS

0

-V

0.5 1 1.5 2 2.5

Gate-Source Voltage v Gate Charge

VDS=-24V

VDS=-15V

3.5 4 4.5

Q -Charge (nC)

Basic Gate Charge Waveform

Switching Time Waveforms Switching Time Test Circuit

PROVISIONAL ISSUE A - JULY 1999

Gate Charge Test Circuit

86

ZXM61P03F

PACKAGE DIMENSIONS PAD LAYOUT DETAILS

N

DIM Millimetres Inches

Min Max Min Max

A 2.67 3.05 0.105 0.120

B 1.20 1.40 0.047 0.055

C – 1.10 – 0.043

D 0.37 0.53 0.0145 0.021

F 0.085 0.15 0.0033 0.0059

G NOM 1.9 NOM 0.075

K 0.01 0.10 0.0004 0.004

L 2.10 2.50 0.0825 0.0985

N NOM 0.95 NOM 0.037

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purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.

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