Datasheet ZVP4424G Datasheet (Zetex)

SOT223 P-CHANNEL ENHANCEMENT

ZVP4424G

MODE VERTICAL DMOS FET

ISSUE 2 - OCTOBER 1995

FEATURES
* 240 Volt V
*R

DS(on)

* Low threshold and Fast switching
APPLICATIONS
* Electronic hook switches
* Telecoms and Battery powered equipment

COMPLEMENTARY TYPE - ZVN4424G
PARTMARKING DETAIL - ZVP4424

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

DS

= 8.8Ω typical at V

GS

=-3.5V

D

G

S

D

Drain-Source Voltage V

Continuous Drain Current at T

=25°C I

amb

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

DS

D

DM

GS

tot

j:Tstg

-240 V

-480 mA

-1.0 A

± 40

2.5 W

-55 to +150 °C

V

3 - 438

ZVP4424G

ZVP4424G

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV

Voltage

Gate-Source Threshold
Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain
Current

On-State Drain Current I

Static Drain-Source
On-State Resistance

Forward
Transconductance (1) (2)

Input Capacitance (2) C

Common Source Output
Capacitance (2)

Reverse Transfer
Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

(1) Measured under pulsed conditions. Width=300
(2) Sample test.

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

(3) Switching times measured with 50

-240 V ID=-1mA, VGS=0V

DSS

-0.7 -1.4 -2.0 V ID=-1mA, VDS= V

100 nA

-10

µA

-100

µA

=± 40V, V

V

GS

V

=-240V, VGS=0V

DS

=-190V, VGS=0V, T=125°C

V

DS

-0.75 -1.0 A VDS=-10V, VGS=-10V

7.1

8.8911

VGS=-10V, ID=-200mA

Ω

V

Ω

GS

=-3.5V, ID=-100mA

125 mS VDS=-10V,ID=-0.2A

100 200 pF

18 25 pF

=-25V, VGS=0V, f=1MHz

V

DS

515pF

815ns

815ns

26 40 ns

V

DD

V

GEN

≈−50V, I

=-10V

20 30 ns

µs. Duty cycle ≤2%

Ω source impedance and <5ns rise time on a pulse generator

Spice parameter data is available upon request for this device

=0V

DS

=-0.25A,

D

GS

300

250

F)
(p

200

ce
n

ta

150

ci
a
p
a

100

C
C-

50

0

-0.01 -1 -10 -100

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

TYPICAL CHARACTERISTICS

Note :V

GS=

0V

iss

C

oss

C

rss

C

0

-2

-4

-6

-8

VDS= -20V

D=-

Note :I

0.25A

01 45

Q-Gate Charge (nC)

-Gate Source Voltage (Volts)

S
G

V

-10

-12

-14

-16

Gate charge v gate-source voltage

-50V

-100V

32

ZVP4424G

TYPICAL CHARACTERISTICS

-1.2

-1.0

ps)

-0.8

t (Am

-0.6

en

Curr

-0.4

n
ai

r

-0.2

- D
I

0

0-2 -4 -6 -8 -10

300µs Pulsed Test

VDS- Drain Source Voltage (Volts)

Saturation Characteristics

400

300

200

100

-Transconductance (mS)

s

f

g

0

300µs Pulse d Test
V

DS

=-10V

0 -0.2 -0.4 -0.6 -0.8 -1.0

ID- Drain Current (Amps

Transconductance v drain current

-1.2

GS

V

=-10V

-5V

-4V

-3V

-2.5V

-2V

-1.0

ps)

-0.8

nt (Am

-0.6

rre
Cu

-0.4

n

Drai

-0.2

­I

0

0-2-4-6-8-10

VGS- Gate Source

VDS=-10V

µ

300

s Pulsed Test

Voltage (Volts)

Transfer Characteristics

400

300

200

100

-Transconductance (mS)

s

f

g

0

0-2-4-6

)

300µs Pulsed Test
V

DS

=-10V

VGS-Gate Source Voltage (Volts)

Transconductance v gate-source voltage

Ω

100

VGS=-2V

10

1

-0.01

RDS(on)-Drain Source On Resistance

I

On-resistance vs Drain Current

-2.5V

-3V

-10V

300µs Pulsed Test

-0.1 -10

D-

Drain Current (Amps)

-1

3 - 4403 - 439

2.4

2.2

2.0

1.8

1.6

1.4

and V

1.2

1.0

R

0.8

0.6

sed

i

0.4

al

0.2

rm

0.0

No

-50

Normalised R

-25 0 25 50 75

Junction Temperature (°C)

DS(on)

and V

GS(th)

GS=

V

-10V

ID=0.2A

V

GS=VDS

ID=-1mA

125

100 150

vs Temperature