Page 1
P-CHANNEL ENHANCEMENT
Switc
easured
50Ω source
pedance and <5ns
ato
ZVP3306A
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
*60 Volt V
*R
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
Continuous Drain Current at T
Pulsed Drain Current I
Gate Source Voltage V
Power Dissipation at T
Operating and Storage Temperature Range T
DS(on)
DS
=14Ω
=25°C I
amb
=25°C P
amb
DS
D
DM
GS
tot
j:Tstg
D
G
S
E-Line
TO92 Compatible
-60 V
-160 mA
-1.6 A
± 20
625 mW
-55 to +150 °C
V
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
BV
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage I
Zero Gate Voltage Drain
Current
On-State Drain Current(1) I
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2) C
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3) t
Rise Time (2)(3) t
Turn-Off Delay Time (2)(3) t
Fall Time (2)(3) t
V
GS(th)
GSS
I
DSS
D(on)
R
DS(on)
g
fs
iss
C
oss
C
rss
d(on)
r
d(off)
f
(1) Measured under pulsed conditions. Width=300
(2) Sample test.
-60 V ID=-1mA, VGS=0V
DSS
-1.5 -3.5 V ID=-1mA, VDS= V
20 nA
-0.5
µA
-50
µA
=± 20V, V
V
GS
V
=-60 V, VGS=0
DS
V
=-48 V, VGS=0V, T=125°C(2)
DS
-400 mA VDS=-18 V, VGS=-10V
14
VGS=-10V,ID=-200mA
Ω
60 mS VDS=-18V,ID=-200mA
50 pF
25 pF VDS=-18V, VGS=0V, f=1MHz
8pF
8ns
8ns
8ns
V
DD
8ns
µs. Duty cycle ≤2%
≈-18V, I
3-4293-430
hing times m
with
im
rise time on a pulse gener
GS
=0V
DS
=-200mA
D
(
3
)
r
Page 2
S
tcgt
es
easu
edt50
sou
ce
pedacead5sseteoapusegee
ato
ZVP3306A
ZVP3306A
TYPICAL CHARACTERISTICS
-1.2
V
GS=
-20V
V
GS=
-20V
-1.0
)
-0.8
nt (Amps
-0.6
e
r
r
u
-0.4
C
n
i
a
r
-0.2
D
-
D
I
0
-10
-16V
-14V
-12V
-10V
-9V
-8V
-7V
0 -10 -20 -30 -40 -50
VDS - Drain Source Voltage (Volts)
Output Characteristics
-6V
-5V
-4V
-1.0
-0.8
Amps)
-0.6
t (
n
-0.4
-0.2
- Drain Curre
D
I
0
0-2 -4 -6 -8 -10
VDS - Drain Source Voltage (Volts)
Saturation Characteristics
)
s
-1.0
VGS=
-16V
-14V
-12V
-10V
-9V
-8V
-7V
-6V
-5V
-4.5V
-8
-6
Voltage (Volts)
-4
-2
Drain Source
0
DS-
V
0-2 -4-6-8-10
VGS-Gate Source Voltage (Volts)
Vo ltag e Sa turation Characteristics
(Ω)
100
10
1
-10
RDS(on)-Drain Source On Resistance
On-resistance vs Drain Cur re nt
VGS=-5V
-6V
-100 -1000
ID-Drain Current (mA)
-7V
-10V
I
D=
-
400mA
-200mA
-100mA
-15V
-20V
-0.8
-0.6
Current (Amp
ain
r
-0.4
e D
t
-0.2
On-Sta
-
)
n
0
O
0-2-4-6-8-10
D(
I
V
DS=-
10V
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
2.6
2.4
S(th)
G
2.2
2.0
nd V
a
1.8
1.6
DS(on)
1.4
R
d
1.2
e
s
1.0
ali
m
0.8
Nor
0.6
-40
-20 0 20 40 60 80
Normalised R
e R
rc
u
o
S
-
ain
Dr
G
ate
T
h
res
Junction Temperature (°C)
DS(on)
and V
GS(th)
o
S(
D
R
tance
s
i
s
e
h
o
l
d
V
o
l
tag
e
120
100 140 160
vs Temperature
V
GS=
ID=0.37A
)
n
V
ID=-1mA
V
GS
-10V
GS=VDS
(
T
H
)
180
Page 3
TYPICAL CHARACTERISTIC S
ZVP3306A
120
100
S)
m
(
80
e
c
n
60
ducta
n
o
40
sc
an
r
20
-T
fs
g
0
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
Note:V
DS=
-10V
ID- Drain Current (Amps)
Transconductance v drain current
60
Note:V
GS=
50
)
F
p
(
40
e
c
n
30
ita
20
C-Capac
10
0
0 -10 -20 -30 -40 -50 -60 -70
0V
f=1MHz
VDS-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
120
100
80
60
40
ransconductance (mS)
20
-T
s
f
g
0
0-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Note:V
DS=
-10V
VGS-Gate Source Voltage (Volts)
Transconductance v gate-source voltage
2
olts)
1
Note:I
D=-
VDS=
-20V
0.2A
-40V -60V
(V
0
age
-2
t
l
o
C
iss
C
oss
C
rss
-4
ce V
-6
ur
-8
So
-10
-12
Gate
-
-14
GS
V
-16
0 0.5 1.0 1.5
Q-Gate Charge (nC)
Gate charge v gate-source voltage
3-431
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