Datasheet ZVP2120A Datasheet (Zetex)

Page 1

P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

ISSUE 2  MARCH 94

FEATURES * 200 Volt V *R

DS(on)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Drain-Source Voltage V

Continuous Drain Current at T

Pulsed Drain Current I

Gate Source Voltage V

Power Dissipation at T

Operating and Storage Temperature Range T

=25Ω

DS

=25°C I

amb

=25°C P

amb

DS

D

DM

GS

tot

j:Tstg

ZVP2120A

D G S

E-Line

TO92 Compatible

-200 V

-120 mA

-1.2 A

± 20

700 mW

-55 to +150 °C

V

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.

Drain-Source Breakdown

BV

Voltage

Gate-Source Threshold Voltage

Gate-Body Leakage I

Zero Gate Voltage Drain Current

On-State Drain Current(1) I

Static Drain-Source On-State Resistance (1)

Forward Transconductance (1)(2)

Input Capacitance (2) C

Common Source Output Capacitance (2)

Reverse Transfer Capacitance (2)

Turn-On Delay Time (2)(3) t

Rise Time (2)(3) t

Turn-Off Delay Time (2)(3) t

Fall Time (2)(3) t

V

GS(th)

GSS

I

DSS

D(on)

R

DS(on)

g

fs

iss

C

oss

C

rss

d(on)

r

d(off)

f

(1) Measured under pulsed conditions. Width=300

-200 V ID=-1mA, VGS=0V

DSS

-1.5 -3.5 V ID=-1mA, VDS= V

20 nA

-10

-100

µA µA

V

GS

V

DS

V

DS

T=125°C

-300 mA VDS=-25 V, VGS=-10V

25

VGS=-10V,ID=-150mA

Ω

50 mS VDS=-25V,ID=-150mA

100 pF

25 pF VDS=-25V, VGS=0V, f=1MHz

7pF

7ns

15 ns

12 ns

V

DD

15 ns

µs. Duty cycle ≤2%

=± 20V, V

=-200 V, VGS=0 =-160 V, VGS=0V,

(2)

≈-25V, I

(2) Sample test.

3-425

GS

=0V

DS

=-150mA

D

( 3

Page 2

ZVP2120A

TYPICAL CHARACTERISTICS

VGS=

-10V

-0.6

-0.4

-0.2

0

-On-State Drain Current (Amps)

) n

D(O

I

-8V

-7V

DS

V

- Drain Source

-6V

Voltage (Volts)

Output Characteristics

-20

-18

-16

-14

-12

-10

Voltage (Volts)

-8

-6

-4

-2

Drain Source

0

DS-

V

0 -2 -4 -6 -8 -10

VGS-Gate Source Voltage (Volts)

Vo ltag e Sa turation Characteristics

-5V

-4.5V

-4V

-3.5V

ID=

-

300mA

-200mA

-100mA

-50mA

-0.4

-0.3

-0.2

-0.1

-On-State Drain Current (Amps)

0

) n

0-2 -4-6-8-100 -20 -40 -60 -80 -100

D(O

I

DS

V

- Drain Source

Voltage (Volts)

Saturation Characteristics

-0.6

-0.4

-0.2

On-State Drain Current (Amps)

-

)

0

n O

0-2-4-6-8-10

D(

I

VGS-Gate Source Voltage (Volts)

Transfer Characteristics

VDS=

-25V

-10V

VGS=

-10V

-8V

-7V

-6V

-5V

-4.5V

-4V

-3.5V

)

Ω

100

(

50

-Drain Source Resistance

10

DS(ON)

-1 -10

R

VGS-Gate Source Voltage (Volts)

On-resistance vs gate-source voltage

ID=

-300mA

-200mA

-I00mA

-50mA

-20

2.6

2.4

h)

S(t

2.2

G

2.0

1.8

and V

1.6

DS(on)

1.4

R d

1.2

ise

1.0

mal

0.8

r

0.6

No

-40

-20 0 20 40 60 80

Normalised R

e R

rc

u

o

S

-

n

Drai

Ga

t

e

T

h

r

e

T-Temperature (°C)

DS(on)

and V

n

o

DS(

R

e

c

n

ta

s

i

s

e

s

h

o

ld

V

o

l

t

ag

120

100 140 160

GS(th)

vs Temperature

)

VGS=-10V

ID=-0.1A

VGS=VDS

ID=-1mA

e

V

GS

(

th

)

180

Page 3

TYPICAL CHARACTERISTICS

ZVP2120A

200 180

S) m

160 140

120 100

ductance (

80

n

o

60

c

40

rans

20

-T

s

f

0

g

0 -0.2 -0.4 -0.6 -0.8

VDS=-25V

ID- Drain Current (Amps)

Transconductance v drain current

100

80

pF) (

nce

60

ita

c

pa

40

Ca C-

20

0-10-20-30

VDS-Drain Source Voltage (Volts)

Capacitance v drain-source voltage

Ciss

Coss

-40 -50

ransconductance (mS)

-T

s

f

g

olts)

V

( ge

ta

l

o ce V

ur

So Gate

-

Crss

GS

V

200 180 160 140

120 100

80 60 40 20

0

0-2-4-6-8-10

VDS=-25V

VGS-Gate Source Voltage (Volts)

Transconductance v gate-source voltage

0

-2

-4

-6

-8

-10

-12

-14

-16 0

0.2 0.4 0.6 0.8 1.0 1.2

VDS=

-50V

-100V

-180V

1.4 1.6 1.8 2.0 2.2 2.4

Q-Charge (nC)

ID=- 0.4A

Gate charge v gate-source voltage

3-4273-426

Loading...