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PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ZTX750
ZTX751
ISSUE 2 JULY 94
FEATURES
* 60 Volt V
CEO
* 2 Amp continuous current
* Low saturation voltage
= 1 Watt
*P
tot
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX750 ZTX751 UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Power Dissipation: at T
=25°C
amb
derate above 25°C
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
ZTX750 ZTX751
PARAMETER SYMBOL
MIN. TYP. MAX. MIN. TYP. MAX.
CBO
CEO
EBO
CM
C
P
tot
j:Tstg
= 25°C unless otherwise stated).
-60 -80 V
-45 -60 V
-5 V
-6 A
-2 A
1
5.7
mW/°C
-55 to +200 °C
UNIT CONDITIONS.
W
Collector-Base
Breakdown
Voltage
Collector-Emitter
Breakdown
Voltage
Emitter-Base
Breakdown
Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
-60 -80 V
=-100µA
I
C
-45 -60 V IC=-10mA
-5 -5 V
-0.1
-0.1
-10
-10
-0.1 -0.1
-0.15
-0.28
-0.3
-0.5
-0.15
-0.28
-0.3
-0.5VV
=-100µA
I
E
V
µA
CB
V
µA
CB
V
µA
CB
µA
VCB=-60V,T
V
µA
EB
IC=-1A, IB=-100mA
=-2A, IB=-200mA
I
C
=-45V
=-60V
=-45V,T
=-4V
-0.9 -1.25 -0.9 -1.25 V IC=-1A, IB=-100mA
3-257
amb
amb
=100°C
=100°C
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ZTX750
ZTX751
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
ZTX750 ZTX751
PARAMETER SYMBOL
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Transition
Frequency
Switching Times t
Output
Capacitance
f
T
on
t
off
C
obo
*Measured under pulsed conditions. Pulse width=300
100 140 100 140 MHz IC=-100mA, VCE=-5V
f=100MHz
40 40 ns IC=-500mA, VCC=-10V
I
=-50mA
450 450 ns
B1=IB2
30 30 pF VCB=10V f=1MHz
µs. Duty cycle ≤ 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance:Junction to Ambient
Junction to Ambient
Junction to Case
2
1
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
175
116
70
°C/W
°C/W
°C/W
2.5
tts)
a
2.0
W
(
n
o
1.5
issipati
1.0
D
r
we
0.5
ax Po
0
M
-40 0.0001
T -Temperature (°C)
Case temperature
Ambient temperat
ure
40 60 80 100 120 200180160140
Derating curve
3-258
200
100
Thermal Resistance (°C/W)
D=1 (D.C.)
t
1
D=t
1/tP
t
P
D=0.5
D=0.2
D=0.1
Single Pulse
0
0.001
Pulse Width (seconds)
Maximum transient thermal impedance
10 10010.10.01-20 0 20
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TYPICAL CHARACTERISTICS
ZTX750
ZTX751
0.6
0.5
)
lts
0.4
o
V
(
-
0.3
(sat)
E
0.2
C
V
0.1
- Gain
E
F
h
IC/IB=10
0
0.0010.0001
IC - Collector Current (Amps)
V
225
175
125
75
0
0.01
IC - Collector Current (Amps)
0.01
CE(sat)
hFEv IC
0.1
v IC
VCE=2V
0.1 1
td
tr
tf
ts
ns
ns
140
700
120
600
e
500
100
m
i
400
80
g t
n
i
300
60
h
200
40
Switc
100
20
101
0
ts
td
tf
tr
0
0.1
IB1=IB2=IC/10
1
IC - Collector Current (Amps)
Switching Speeds
1.4
1.2
)
lts
o
V
1.0
(
-
(sat)
0.8
E
B
V
0.6
10
0.0001
IC/IB=10
0.01
0.001
IC - Collector Current (Amps)
BE(sat)
V
v IC
100.1 1
)
olts
V
(
-
E
B
V
1.2
1.0
0.8
0.6
0.4
0.0001
VCE=2V
0.001
IC - Collector Current (Amps)
BE(on)
V
0.01
v IC
100.1 1
3-259
ps)
Am
t (
n
e
r
Cur
r
to
c
le
l
- Co
C
I
0.01
10
1
0.1
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
100µs
0.1
CE
Collector Voltage (Volts)
V
-
Safe Operating Area
=25°C
amb
7
5
0
X
T
Z
1 10 100
ZTX751
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