Datasheet ZTX718 Datasheet (Zetex)

PNP SILICON PLANAR MEDIUM POWER

C
B
E

E-Line

TO92 Compatible

HIGH GAIN TRANSISTOR

ISSUE 4– MAY 1998

FEATURES
* 6A Peak pulse current
* Excellent h
* low saturation voltage
*I

Cont 2.5A

C

APPLICATIONS
* Power MOSFET gate driver in conjunction with

complementary ZTX618

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

characteristics up to 6A (pulsed)

FE

ZTX718

Collector-Base Voltage V

Collector-Emitter Voltage V

Emitter-Base Voltage V

Peak Pulse Current I

Continuous Collector Current I

Base Current I

Practical Power Dissipation* P

Power Dissipation at T

=25°C P

amb

Operating and Storage Temperature Range T

CBO

CEO

EBO

CM

C

B

totp

tot

j:Tstg

-55 to +200 °C

* Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

-20 V

-20 V

-5 V

-6 A

-2.5 A

-500 mA

1.5 W

1W

ZTX718

ELECTRIAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base
Breakdown Voltage

Collector-Emitter
Breakdown Voltage

Emitter-Base
Breakdown Voltage

Collector Cut-Off
Current

Emitter Cut-Off
Current

Collector Emitter
Cut-Off Current

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Base-Emitter Turn-On
Voltage

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

-20 -65 V

I

=-100µA

C

-20 -55 V IC=-10mA*

-5 -8.8 V

I

=-100µA

E

-100 nA VCB=-15V

-100 nA VEB=-4V

-16

-130

-145

-190

-100 nA V

-40

-200

-220

-260

mV
mV
mV
mV

=-15V

CES

IC=-0.1A, IB=-10mA*
I

=-1A, IB=-20mA*

C

I

=-1.5A, IB=-50mA*

C

I

=-2.5A, IB=-200mA*

C

-0.98 -1.1 V IC=-2.5A, IB=-200mA*

-0.85 -0.95 V IC=-2.5A, VCE=-2V*

Static Forward
Current Transfer
Ratio

Transition
Frequency

Output Capacitance C

Turn-On Time t

Turn-Off Time t

h

f

FE

T

obo

(on)

(off)

300
300
150
35
15

475
450
230
70
30

150 180 MHz IC=-50mA, VCE=-10V

21 30 pF VCB=-10V, f=1MHz

40 ns VCC=-10V, IC=-1A

670 ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

IC=-10mA, VCE=-2V*
I

=-100mA, VCE=-2V*

C

I

=-2A, VCE=-2V*

C

I

=-4A, VCE=-2V*

C

I

=-6A, VCE=-2V*

C

f=100MHz

I

=20mA

B1=IB2

TYPICAL CHARACTERISTICS

ZTX718

0.6
25°C

0.5 0.5

0.4

- (V)

0.3

CE(sat)

0.2

V

0.1

0

1mA

100°C

25°C

450

-55°C

225

fe - Typical Gain

H

0

C/IB

=50

I

C/IB

I

=30

C/IB

=10

I

100mA10mA 1A

I

C-Collector Current IC-Collector Current

V

CE(sat)

v I

C

10A 10A

CE

V

=2V

10A1A10mA 100mA1mA 1mA 100mA10mA 1A 10A

IC-Collector Current

hFE v IC

1.2
VCE=2V

1.0

0.8

0.6

BE(on) -(V)

0.4

V

0.2

0

1mA

-55°C
25°C

100°C

100mA10mA 1A 10A

C-Collector Current

I

BE(on) v IC

V

0.6
IC/IB=10

0.4

0.3

CE(sat) - (V)

0.2

V

0.1

0

1mA

V

1.4

IC/IB=10

1.2

1.0

0.8

0.6

BE(sat) - (V)

V

0.4

0.2

0

-55°C

100°C

C-Collector Current

I

CE(sat)

25°C

v I

100°C

-55°C

25°C

1A100mA10mA

C

VBE(sat) v Ic

10

0.1

C - Collector Current (A)

I

0.01

Single Puls e Test Tamb=25C

1

DC

1s

100ms

10ms

1ms

100us

VCE - Collector Voltage

100V10V1V0.1V

Safe Operating Area

ZTX718

THERMAL CHARACTERISTICS

PARAMETER SYMBOL MAX. UNIT

Thermal Resistance:

Junction to Ambient
Junction to Ambient

1
2

R

th(j-amb)1

R

th(j-amb)2

†

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

180

D=1(D.C.)

160
140
120
100
80
60

D=0.05

40
20
0

0.1ms

Transiant Thermal Resistance ( C/W)

t1

tP

D=0.5

D=0.2
D=0.1

1ms 10ms 100ms 10s 100s1s

Pulse Width

Transient Thermal Resistance

D=t1

tP

Single Pulse

)

s

t

t
Wa

(

­ion

pat
Dissi

r

Powe
ax

M

1.0

0.75

0.50

0.25

-40

04080

T -Temperature

Derating curve

175
116

Ambien

t

t

empe

rat

120 200160

(° C)

°C/W
°C/W

u

re

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Zetex plc 1998