Page 1
SM-8 DUAL NPN MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 1 - NOVEMBER 1995
PARTMARKING DETAIL T605
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
140 V
Collector-Emitter Voltage V
CEO
120 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Current I
CM
4A
Continuous Collector Current I
C
1A
Operating and Storage Temperature Range T
j:Tstg
-55 to +150 °C
THERMAL CHARACTERISTICS
PARAMETER SYMBOL VALUE UNIT
Total Power Dissipation at T
amb
= 25°C*
Any single die on
Both die on equally
P
tot
2.25
2.75
W
W
Derate above 25°C*
Any single die on
Both die on equally
18
22
mW/ °C
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
55.6
45.5
°C/ W
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
3 - 324
ZDT605
C
1
C
1
C
2
C
2
B
1
E
1
B
2
E
2
SM-8
(8 LEAD SOT223)
Page 2
ZDT605
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
140 V
I
C
=100µA
Collector-Emitter Breakdown
Voltage
V
CEO(SUS)
120 V IC=10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
10 V
I
E
=100µA
Collector Cutoff Current I
CBO
0.01
10
µA
µA
V
CB
=120V
V
CB
=120V, T
amb
=100°C
Collector Cutoff Current I
CES
10
µA
V
CES
=120V
Emitter Cutoff Current I
EBO
0.1
µA
V
EB
=8V
Collector-Emitter Saturation
Voltage
V
CE(sat)
1.0
1.5
V
V
IC=250mA, IB=0.25mA*
I
C
=1A, IB=1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.8 V IC=1A, IB=1mA*
Base-Emitter TurnOn Voltage V
BE(on)
1.7 V IC=1A, VCE=5V*
Static Forward
Current Transfer Ratio
h
FE
2K
5K
2K
0.5K
100K
I
C
=50mA, VCE=5V*
I
C
=500mA, VCE=5V*
I
C
=1A, VCE=5V*
I
C
=2A, VCE=5V*
Transition Frequency f
T
150 MHz IC=100mA, VCE=10V
f=20MHz
Input Capacitance C
ibo
90 Typical pF VEB=0.5V, f=1MHz
Output Capacitance C
obo
15 Typical pF VCE=10V, f=1MHz
Switching Times t
on
0.5 Typical
µs
I
C
=0.5A, VCE=10V
I
B1=IB2
=0.5mA
t
off
1.6 Typical
µs
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
3 - 325
Page 3
TYPICAL CHARACTERISTICS
V
CE(sat)
v IC
IC-
Collector Current (Amps)
V
- (V
ol
ts)
0
0.4
0.01
0.1
101
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IC-
Collector Current (Amps)
V
BE(sat)
v IC
V
- (V
ol
ts)
0.6
0.01
100.1 1
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IC/IB=100
IC/IB=100
IC-
Collector Current (Amps)
hFEv IC
h
- G
a
in
n
or
m
a
l
i
se
d t
o 1
A
m
p
0.001
0.01
100.1 1
0.5
1.0
1.5
2.0
2.5
VCE=5V
IC-
Collector Current (Amps)
V
BE(on)
v IC
V
- (V
o
lts)
0.6
1.0
1.4
1.8
0.01
0.1
110
VCE=5V
-55°C
+25°C
+100°C
0.4
0.8
1.2
1.6
2.2
0.2
-55°C
+25°C
+100°C
+175°C
-55°C
+25°C
+100°C
+175°C
0.4
-55°C
+25°C
+100°C
2.2
2.0
ZDT605
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