Page 1
查询Z04供应商
®
Z04 Series
STANDARD 4A TRIACS
MAIN FEATU RE S :
A2
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
DESCRIPTION
4A
600 to 800 V
3 to 25 mA
G
A1
A1
A2
G
The Z04 series is suitable for general purpose AC
switching applications. They can be found in
applications such as touch light dimmers, fan
controllers, HID lamp ignitors,...
TO202-3
(Z04xxF)
Different gate current sensitivities are available,
allowing optimized performances when controlled
directly from microcontrollers.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
I
T(RMS)
I
TSM
²
I
dI/dt
I
GM
P
G(AV)
T
stg
T
July 2003 - Ed: 5
RMS on-state current (full sine wave) TI = 30°C 4 A
Tamb = 25°C 1
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
tI
²
t Value for fusing
Critical rate of rise of on-state current
I
= 2 x IGT , tr ≤ 100 ns
G
F = 50 Hz t = 20 ms 20 A
F = 60 Hz t = 16.7 ms 21
tp = 10 ms 2.2
F = 120 Hz Tj = 125°C 20 A/µs
Peak gate current tp = 20 µs Tj = 125°C 1.2 A
Average gate power dissipation Tj = 125°C 0.2 W
Storage junction temperature range
Operating junction temp erature range
j
- 40 to + 150
- 40 to + 125
A
°C
²
s
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Page 2
Z04 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Quadrant Z04xx
02 05 09 10
I
GT
V
V
I
H
(1)
GT
GD
(2)
I
L
= 12 V RL = 30 Ω
V
D
VD = V
= 50 mA
I
T
IG = 1.2 I
RL = 3.3 kΩ Tj = 125°C
DRM
GT
ALL MAX. 3 5 10 25
ALL MAX. 1.3 V
ALL MIN. 0.2
MAX. 3 5 10 25 mA
I - III - IV MAX. 6 10 15 25 mA
II 12 15 25 50
dV/dt (2) V
= 67 %V
D
(dV/dt)c (2) (dI/dt)c = 1.8 A/ms
gate open Tj = 110°C
DRM
Tj = 110°C MIN. 0.5 1 2 5 V/µs
MIN. 10 20 100 200 V/µs
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
(2) ITM = 5.5 A tp = 380 µs
V
TM
V
(2)
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Threshold voltage Tj = 125°C MAX. 0.95 V
Dynamic resistance Tj = 125°C MAX. 180 mΩ
V
= V
DRM
RRM
Tj = 25°C MAX. 2.0 V
Tj = 25°C
Tj = 125°C 0.5 mA
MAX.
5µA
Unit
mA
V
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
R
th(j-l)
th(j-a)
Junction to lead (AC)
15
Junction to ambient 100 °C/W
°C/W
2/6
Page 3
PRODUCT SELECTOR
Z04 Series
Part Number
Sensitivity Type
Package
600 V 700 V 800 V
Z0402MF X 3 mA Standard TO202-3
Z0402SF X 3 mA Standard TO202-3
Z0402NF X 3 mA Standard TO202-3
Z0405MF X 5 mA Standard TO202-3
Z0405SF X 5 mA Standard TO202-3
Z0405NF X 5 mA Standard TO202-3
Z0409MF X 10 mA Sta ndar d TO202-3
Z0409SF X 10 mA Standar d TO202-3
Z0409NF X 10 mA Standard TO202-3
Z0410MF X 25 mA Sta ndar d TO202-3
Z0410SF X 25 mA Standar d TO202-3
Z0410NF X 25 mA Standard TO202-3
ORDERING INFORMA T IO N
Voltage
Z 04 02 M F 0AA2
Blank
TRIAC
SERIES
CURRENT:4A
SENSITIVITY:
02: 3mA
05: 5mA
09: 10mA
10: 25mA
VOLTAGE:
M: 600V
S: 700V
N: 800V
PACKAGE:
F:TO202-3
PACKING MODE:
0AA2:Tube
1AA2: Bulk
OTHER INFORMATION
Part Number Marking Weight
Base
quantity
Z04xxyF 0AA2 Z04xxyF 0.8 g 50 Tube
Z04xxyF 1AA2 Z04xxyF 0.8 g 250 Bulk
Note: xx = sensitivity, y = voltage
Packing
mode
3/6
Page 4
Z04 Series
Fig. 1: Maximum power dissipation versus RMS
on-state current (full cycle).
P(W)
7
6
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IT(RMS)(A)
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration.
K=[Zth(j-a)/Rth(j-a)]
1E+0
1E-1
1E-2
1E-3
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
tp(s)
Fig. 2: RMS on-state current versus ambient
temperature (full cycle).
IT(RMS)(A)
4.5
Rth(j-a)=Rth(j-l)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125
Rth(j-a)=100°C/W
Tamb(°C)
Fig. 4: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
1.5
1.0
0.5
0.0
IGT
IH & IL
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM(A)
25
20
Repetitive
Non repetitive
Tj initial=25°C
15
10
Tamb=25°C
5
0
1 10 100 1000
Number of cycles
4/6
t=20ms
One cycle
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
500
100
dI/dt limitation:
20A/µs
10
tp (ms)
1
0.01 0.10 1.00 10.00
Tj initial=25°C
ITSM
I²t
Page 5
Z04 Series
Fig. 7: On-state characteristics (maximum
values).
ITM(A)
20.0
10.0
Tj=Tj max.
1.0
Tj=25°C
Tj max.
Vto= 0.95V
W
0.1
VTM(V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Rd= 180 m
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1.0 10.0 100.0
Z0402
Z0405
(dV/dt)c (V/µs)
Z0410
Z0409
4
3
2
1
0
0 25 50 75 100 125
Tj (°C)
5/6
Page 6
Z04 Series
PACKA G E MECHANICAL DATA
TO202-3 (Plastic)
O
A
DIMENSIONS
REF.
C
F
D
P
J
H
N1
N
M
A 10.1 0.398
C 7.3 0.287
D 10.5 0.413
F 1.5 0.059
H 0.51 0.020
J 1.5 0.059
M 4.5 0.177
N 5.3 0.209
N1 2.54 0.100
O 1.4 0.055
P 0.7 0.028
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
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of use of su ch in for mat i on n or f or a ny in fr ing em ent of pa te nts or o ther r igh ts of th ir d pa r tie s w hic h may res ul t f rom i ts us e. No license is granted
by impl i cation or ot herwise under any patent or patent r i ght s of STMi croelectro ni cs. Specif i cations mentioned i n this publ i cation are subje ct
to change wi t hout notice. T hi s publicati on supersede s and replaces all in formation previously supplied. STM i croelectro ni cs products are not
authori zed for use as cr i tical compo nents in life support devices or systems without ex press written approva l o f ST M i croelectr o nics.
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