Datasheet XP132A01A0SR Datasheet (Torex Semiconductor Ltd)

373

XP132A01A0SR

PowerMOSFET

u

8D1S

5D4G

6D3S

7D2S

◆ P-Channel Power MOS FET

◆ DMOS Structure

◆ Low On-State Resistance: 0.105Ω MAX

◆ Ultra High-Speed Switching

◆ SOP-8 Package

■ Applications

● Notebook PCs

● Cellular and portable phones

● On-board power supplies

● Li-ion battery systems

■ General Description

The XP132A01A0SR is a P-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.

■ Features

Low on-state resistance: Rds(on)=0.075Ω(Vgs=-10V)

Rds(on)=0.105Ω(Vgs=-5.5V)

Ultra high-speed switching
Operational Voltage: -5.5V
High density mounting: SOP-8

■ Absolute Maximum Ratings

■ Equivalent Circuit

■ Pin Configuration

P-Channel MOS FET

(1 device built-in)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Reverse Drain Current

Continuous Channel

Power Dissipation (note)

Channel Temperature
Storage Temperature

Vdss
Vgss

Id

Idp

Idr

Pd

Tch

Tstg

-30

±20

-5

-15

-5

2.5

150

-55~150

V
V
A
A
A

W

:

:

SYMBOL RATINGS

UNITS

■ Pin Assignment

PIN

NUMBER

PIN

NAME

FUNCTION

1~3

5~8

4

S

D

G

Source

Drain

Gate

81

54

63

72

SOP-8

(TOP VIEW)

Ta=25

:

When implemented on a glass epoxy PCB

Note:

XP132A01A0SR

PowerMOSFET

374

u

DC characteristics

Ta=25

:

■ Electrical Characteristics

PARAMETER UNITS

Gate-Source Cut-off Voltage Vgs(off) -1.0 -2.5

V

0.105Id=-1A, Vgs=-5.5V Ω

Gate-Source Leakage Current Igss µA±10

Forward Transfer Admittance

(note)

5S

Body Drain Diode

Forward Voltage

-0.85 -1.1 V

Drain Cut-off Current Idss -10 µA

Vf

Vds=-30V, Vgs=0V

Id=-1mA, Vds=-10V

Id=-3A, Vds=-10V

If=-5A, Vgs=0V

Vgs=±20V, Vds=0V

Drain-Source On-state

Resistance (note)

Rds(on)

Ω

Id=-3A, Vgs=-10V

0.075

SYMBOL CONDITIONS MAXMIN TYP

PARAMETER UNITS

Feedback Capacitance Crss

pF

Output Capacitance Coss pF

Input Capacitance Ciss

200

560

780 pF

Vds=-10V, Vgs=0V

f=1MHz

SYMBOL CONDITIONS MAXMIN TYP

Dynamic characteristics

Ta=25

:

Effective during pulse test.

Note:

Yfs

PARAMETER UNITS

Fall Time tf

ns

Rise Time tr ns

Turn-on Delay Time td (on)

20

Turn-off Delay Time td (off)

ns

30

25

20 ns

Vgs=-5V, Id=-3A

Vdd=-10V

SYMBOL CONDITIONS MAXMIN TYP

Switching characteristics

Ta=25

:

PARAMETER UNITS

Rth (ch-a)

Thermal Resistance

(channel-surroundings)

50

˚C/W

Implement on a glass epoxy

resin PCB

SYMBOL CONDITIONS MAXMIN TYP

Thermal characteristics

375

u

■ ElectricalCharacteristics

-15

-10

-5

0

0-1 -3-2 -4 -5

-10V -5V

-4.5V

-4V

-3.5V

-3V

Vgs＝−2.5V

   

Drain Current vs. Drain /Source Voltage

Pulse Test, Ta=25:

Drain Current:Id (A)

Drain/Source Voltage:Vds (V)

Topr＝25℃

125℃

-55℃

-15

-10

-5

0

0-1 -3-2 -4 -5

Drain Current vs. Gate/Source Voltage

Pulse Test

Drain Current:Id (A)

Gate/Source Voltage:Vgs (V)

0.20

0.00

0.05

0.15

0.10

0-2-4 -8-6 -10

-5AId＝-3A

Drain/Source On-State Resistance

vs. Gate/Source Voltage

Pulse Test, Ta=25:

Gate/Source Voltage:Vgs (V)

Drain/Source On-State Resistance

:Rds (on) (Ω)

1.00

0.10

0.01
0-5 -15-10 -20

Vgs＝-5V

-10V

Drain/Source On-State Resistance

vs. Drain Current

Pulse Test, Ta=25:

Drain/Source On-State Resistance

:Rds (on) (Ω)

Drain Current:Id (A)

0.00

-60 -30 0 30 60 90 120 150

Id＝-5A

-3A,-5A

-3A

-10V

Vgs＝-5V

0.20

0.15

0.10

0.05

Drain/Source On-State Resistance vs. Ambient Temp.

Pulse Test

Drain/Source On-State Resistance

:Rds (on) (Ω)

Ambient Temperature:Topr (:)

1.0

0.5

0.0

-0.5

-1.0

-60 -30 0 30 60 90 120 150

Gate/Source Cut Off Voltage Variance vs. Ambient Temp.

Vds=-10V, Id=-1mA

Gate/Source Cut Off Voltage Variance

:Vgs (off) Variance (V)

Ambient Temperature:Topr (:)

XP132A01A0SR

PowerMOSFET

376

u

-10

-8

-6

-4

-2

0

0105 152025

Gate/Source Voltage vs. Gate Charge

Vds=-10V, Id=-5A

Gate/Source Voltage:Vgs (V)

Gate Charge:Qg (nc)

0.5V

Vgs＝-5V

-15

-10

-5

0

0 -0.2 -0.4 -0.6 -0.8 -1

Reverse Drain Current vs. Source/Drain Voltage

Pulse Test

Reverse Drain Current:Id (A)

Source/Drain Voltage:Vsd (V)

10

0.0001

0.01

0.001

0.1

1

0.0001 0.001 0.01 0.1 1 10 100

Standardized Transition Thermal Resistance vs. Pulse Width

Rth (ch-a)=50˚C/W, (Implemented on a glass epoxy PCB)

StandardizedTransitionThermalResistance:γs(t)

Pulse Width:PW (sec)

Single Pulse

■ ElectricalCharacteristics

10000

100

1000

0-10-5 -15 -20

Ciss

Coss

Crss

Drain/Source Voltage vs. Capacitance

Vgs=0V, f=1MHz

Capacitance:Ciss, Coss, Crss (pF)

Drain/Source Voltage:Vds (V)

1000

10

100

-0.1 -1 -10

tf

tr

td（off）

td（on）

Switching Time vs. Drain Current

Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≦1%

Switching Time:t (ns)

Drain Current:Id (A)