Page 1
Composite Transistors
2.1±0.1
0.425
1.25±0.1
0.2±0.05
2.0±0.1
0.65
1
2
3
4
5
0.9± 0.1
0.7±0.1
0.2
0 to 0.1
0.12
+0.05
– 0.02
0.2±0.1
0.425
0.65
XP1C301
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
Features
■
●
Two elements incorporated into one package.
(Tr1 base is connected to Tr2 emitter.)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SB709A+2SD601A
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Tr2
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
–60 V
–50 V
–7 V
–100 mA
–200 mA
60 V
50 V
100 mA
200 mA
150 mW
150 ˚C
–55 to +150 ˚C
7V
1 : Emitter (Tr1) 3 :Base (Tr2)
2 : Base (Tr1) 4 :Collector (Tr2)
Emitter (Tr2) 5 :Collector (Tr1)
EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: 4R
Internal Connection
Tr1
15
2
34
Tr2
1
Page 2
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
I
I
V
I
I
V
CBO
CEO
T
CBO
CEO
T
CBO
CEO
EBO
FE
CE(sat)
ob
CBO
CEO
EBO
FE
CE(sat)
ob
XP1C301
IC = –10µA, IE = 0 –60 V
IC = –2mA, IB = 0 –50 V
IE = –10µA, IC = 0 –7 V
VCB = –20V, IE = 0 – 0.1 µA
VCE = –10V, IB = 0 –100 µA
VCE = –10V, IC = –2mA 160 460
IC = –100mA, IB = –10mA – 0.3 – 0.5 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
VCB = –10V, IE = 0, f = 1MHz 2.7 pF
IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 160 460
IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz 3.5 pF
2
Page 3
Composite Transistors
Common characteristics chart
— Ta
P
T
250
)
200
mW
(
T
150
100
50
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of Tr1
XP1C301
)
— V
I
C
–60
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –18–2 –4 –6 –8 –10 –12 –14 –16
IB=–300µA
Collector to emitter voltage VCE (V
IC — V
–240
–200
)
mA
(
–160
C
–120
–80
Collector current I
–40
0
0–2.0–1.6–1.2–0.8–0.4
Base to emitter voltage VBE (V
25˚C
Ta=75˚C –25˚C
CE
–250µA
–200µA
–150µA
BE
Ta=25˚C
–100µA
–50µA
VCE=–5V
IC — I
B
–60
VCE=–5V
Ta=25˚C
–50
)
mA
(
–40
C
–30
–20
Collector current I
–10
0
0 –100 –200 –300 –400
)
)
V
(
CE(sat)
–0.003
Collector to emitter saturation voltage V
–0.001
)
Base current IB (µA
V
CE(sat)
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–1 –3
–10 –30 –100 –300 –1000
Collector current IC (mA
— I
)
C
IC/IB=10
Ta=75˚C
25˚C
–25˚C
)
–400
–350
)
–300
µA
(
–250
B
–200
–150
Base current I
–100
–50
0
0 –0.4 –0.8 –1.2 –1.6
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
–1 –3
IB — V
BE
VCE=–5V
Ta=25˚C
Base to emitter voltage VBE (V
hFE — I
C
VCE=–10V
Ta=75˚C
25˚C
–25˚C
–10 –30 –100 –300 –1000
Collector current IC (mA
)
)
3
Page 4
Composite Transistors
XP1C301
fT — I
160
VCB=–10V
Ta=25˚C
140
)
MHz
120
(
T
100
80
60
40
Transition frequency f
20
0
0.1 0.3
1 3 10 30 100
Emitter current IE (mA
NF — I
20
VCB=–5V
R
=50kΩ
g
18
Ta=25˚C
16
)
14
dB
(
12
10
8
6
Noise figure NF
4
2
0
0.1
f=100Hz
0.3 1 3 1020.50.2 5
Emitter current IE (mA
1kHz
E
E
10kHz
Cob — V
8
)
pF
7
(
ob
6
5
4
3
2
1
Collector output capacitance C
0
–2
–3
–1 –5
)
Collector to base voltage VCB (V
h Parameter — I
300
200
100
50
30
20
10
Parameter h
5
3
2
1
0.1
0.3 1 3 1020.50.2 5
)
Emitter current IE (mA
–10
hre (×10–4)
CB
–20
h
fe
hoe (µS)
hie (kΩ)
f=1MHz
=0
I
E
Ta=25˚C
–50
–30 –100
)
E
VCE=–5V
f=270Hz
Ta=25˚C
)
6
5
)
dB
(
4
3
2
Noise figure NF
1
0
0.01 0.03
300
200
100
50
30
20
10
Parameter h
5
3
2
1
0.1
NF — I
E
VCB=–5V
f=1kHz
=2kΩ
R
g
Ta=25˚C
0.1 0.3 1 3 10
fe
hoe (µS)
CE
IE=2mA
f=270Hz
Ta=25˚C
hie (kΩ)
)
Emitter current IE (mA
h Parameter — V
h
hre (×10–4)
0.3 1 3 1020.50.2 5
Collector to emitter voltage VCE (V
)
Characteristics charts of Tr2
— V
I
C
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
01024 86
Collector to emitter voltage VCE (V
4
CE
Ta=25˚C
IB=160µA
140µA
120µA
100µA
80µA
60µA
40µA
20µA
IB — V
BE
1200
1000
VCE=10V
Ta=25˚C
)
µA
(
800
B
600
400
Base current I
200
0
01.00.80.60.40.2
)
Base to emitter voltage VBE (V
)
240
200
)
mA
(
160
C
120
80
Collector current I
40
0
02.01.61.20.80.4
IC — V
BE
VCE=10V
25˚C
Ta=75˚C –25˚C
Base to emitter voltage VBE (V
)
Page 5
Composite Transistors
XP1C301
IC — I
240
VCE=10V
Ta=25˚C
200
)
mA
(
160
C
120
80
Collector current I
40
0
0 1000800600400200
Base current IB (µA
fT — I
300
)
240
MHz
(
T
180
120
60
Transition frequency f
B
E
)
VCB=10V
Ta=25˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
Ta=75˚C
1 3 10 30 100
Collector current IC (mA
NV — I
240
VCE=10V
=80dB
G
V
Function=FLAT
200
Ta=25˚C
)
mV
(
160
120
80
Noise voltage NV
40
C
IC/IB=10
25˚C
–25˚C
)
C
Rg=100kΩ
22kΩ
4.7kΩ
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1 0.3
1 3 10 30 100
VCE=10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (mA
)
0
–0.1 –0.3
–1 –3 –10 –30 –100
Emitter current IE (mA
0
30 100 300 100050 50020 200
10
)
Collector current IC (µA
)
5
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