Page 1
Composite Transistors
2.1±0.1
0.425
1.25±0.1
0.2±0.05
2.0±0.1
0.65
1
2
3
4
5
0.9± 0.1
0.7±0.1
0.2
0 to 0.1
0.12
+0.05
– 0.02
0.2±0.1
0.425
0.65
XP01531
Silicon NPN epitaxial planer transistor
For high frequency, oscillation and mixing
Features
■
●
Two elements incorporated into one package.
(Emitter-coupled transistors)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SC3130 × 2 elements
Unit: mm
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Rating
Collector to emitter voltage
of
Emitter to base voltage
element
Collector current I
Total power dissipation
Junction temperature
Overall
Storage temperature
Electrical Characteristics (Ta=25˚C)
■
V
CBO
V
CEO
V
EBO
C
P
T
T
j
T
stg
15 V
10 V
50 mA
150 mW
150 ˚C
–55 to +150 ˚C
3V
1 : Base (Tr1) 4 : Collector (Tr2)
2 : Emitter 5 : Collector (Tr1)
3 : Base (Tr2) EIAJ : SC–88A
S–Mini Type Package (5–pin)
Marking Symbol: 9F
Internal Connection
Tr1
15
2
34
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
Collector to base parameter rbb'·C
Common base reverse transfer capacitance
I
I
V
C
CBO
CEO
T
CEO
EBO
FE
CE(sat)
ob
C
rb
IC = 2mA, IB = 0 10 V
IE = 10µA, IC = 0 3 V
VCB = 10V, IE = 0 1 µA
VCE = 10V, IB = 0 10 µA
VCE = 4V, IC = 5mA 75 200 400
IC = 20mA, IB = 4mA 0.5 V
VCB = 4V, IE = –5mA, f = 200MHz 1.4 1.9 2.5 GHz
VCB = 4V, IE = 0, f = 1MHz 0.9 1.1 pF
VCB = 4V, IE = –5mA, f = 31.9MHz 11.8 13.5 ps
VCB = 4V, IE = 0, f = 1MHz 0.25 0.35 pF
1
Page 2
Composite Transistors XP01531
PT — Ta IC — V
200
180
)
160
mW
(
T
140
120
100
80
60
40
Total power dissipation P
20
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
1 3 10 30 100
Ta=75˚C
25˚C
Collector current IC (mA
)
C
IC/IB=10
–25˚C
)
CE
80
)
60
mA
(
C
40
20
Collector current I
0
012210486
Collector to emitter voltage VCE (V
hFE — I
C
360
FE
300
240
180
120
60
Forward current transfer ratio h
0
0.1 0.3
Ta=75˚C
25˚C
–25˚C
1 3 10 30 100
Collector current IC (mA
Ta=25˚C
I
=500µA
B
400µA
300µA
200µA
100µA
VCE=4V
)
IC — V
BE
60
50
)
mA
(
40
C
30
20
Collector current I
10
0
0 2.01.61.20.80.4
)
Base to emitter voltage VBE (V
25˚C
Ta=75˚C –25˚C
fT — I
4.0
3.5
)
GHz
3.0
(
T
2.5
2.0
1.5
1.0
Transition frequency f
0.5
0
–0.1 –0.3
–1 –3 –10 –30 –100
Emitter current IE (mA
VCE=4V
)
E
VCB=4V
Ta=25˚C
)
Cob — V
1.6
)
pF
1.4
(
ob
1.2
1.0
0.8
0.6
0.4
0.2
Collector output capacitance C
0
3 10 30 100
1
CB
Collector to base voltage VCB (V
2
f=1MHz
I
=0
E
Ta=25˚C
)
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