Page 1
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN04A88
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For amplification of low frequency output
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SD601A+UNR511Q
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Tr1
Tr2
Overall
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
C
P
T
T
j
T
stg
60 V
50 V
7V
100 mA
200 mA
–50 V
–50 V
–100 mA
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Collector (Tr2)
2 : Base (Tr2) 5 : Base (Tr1)
3 : Emitter (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: IZ
Internal Connection
Tr1
6
5
43
Tr2
Unit: mm
1
2
1
Page 2
Composite Transistors XN04A88
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Collector output capacitance C
Transition frequency f
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Collector cutoff current
Emitter cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Base to emitter resistance R
Transition frequency f
I
I
V
I
I
V
CBO
CEO
T
CBO
CEO
EBO
T
CBO
CEO
EBO
FE
CE(sat)
ob
CBO
CEO
FE
CE(sat)
BE
IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 0.1 mA
VCE = 10V, IC = 2mA 160 460
IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = 0, f = 1MHz 3.5
VCB = 10V, IE = –2mA, f = 200MHz 80 MHz
IC = –10µA, IE = 0 –50 V
IC = –2mA, IB = 0 –50 V
VCB = –50V, IE = 0 – 0.1 µA
VCE = –50V, IB = 0 – 0.5 µA
VEB = –6V, IC = 0 –2.0 mA
VCE = –10V, IC = –5mA 20
IC = –10mA, IB = – 0.3mA – 0.25 V
–30% 4.7 +30% kΩ
VCB = –10V, IE = 2mA, f = 200MHz 100 MHz
2
Page 3
Composite Transistors XN04A88
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
02040 8060 140120100 160
Ambient temperature Ta (˚C
Characteristics charts of Tr1
)
— V
I
C
CE
60
Ta=25˚C
50
)
mA
(
40
C
30
20
Collector current I
10
0
01024 86
Collector to emitter voltage VCE (V
V
CE(sat)
10
)
V
(
CE(sat)
1
0.1
Ta=75˚C
–25˚C
0.01
Collector to emitter saturation voltage V
0.001
0.1
1 10 100
Collector current IC (mA
— I
IB=160µA
140µA
120µA
100µA
80µA
60µA
40µA
20µA
)
C
IC/IB=10
25˚C
)
IC — I
B
240
VCE=10V
Ta=25˚C
200
)
mA
(
160
C
120
80
Collector current I
40
0
0 1000800600400200
Base current IB (µA
hFE — I
C
600
FE
500
400
300
200
100
Forward current transfer ratio h
0
0.1
Ta=75˚C
25˚C
–25˚C
1 10 100
VCE=10V
Collector current IC (mA
IC — V
BE
120
VCE=10V
)
mA
(
C
80
40
25˚C
Ta=75˚C –25˚C
Collector current I
0
)
02.01.61.20.80.4
Base to emitter voltage VBE (V
IB — V
1200
1000
BE
VCE=10V
Ta=25˚C
)
)
µA
(
800
B
600
400
Base current I
200
0
0 1.00.80.60.40.2
)
Base to emitter voltage VBE (V
)
3
Page 4
Composite Transistors XN04A88
)
pF
(
ob
Cob — V
6
5
4
3
2
1
CB
Collector output capacitance C
0
1
10 100
Collector to base voltage VCB (V
Characteristics charts of Tr2
— V
I
C
CE
–160
–140
)
–120
mA
(
C
–100
–80
–60
–40
Collector current I
–20
0
0 –12–2 –10–4 –8–6
Collector to emitter voltage VCE (V
f=1MHz
I
=0
E
Ta=25˚C
Ta=25˚C
I
=–1.0mA
B
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
)
V
— I
CE(sat)
–10
)
V
(
CE(sat)
–1
Ta=–25˚C
–0.1
75˚C
25˚C
Collector to emitter saturation voltage V
–0.01
–1
)
–10 –100 –1000
Collector current IC (mA
C
IC/IB=10
150
FE
125
100
75
50
25
Forward current transfer ratio h
0
–1
)
hFE — I
C
VCE=–10V
25˚C
Ta=75˚C
–25˚C
–10 –100 –1000
Collector current IC (mA
)
–10000
)
–1000
µA
(
O
–100
–10
Output current I
–1
–0.4
Input voltage VIN (V
4
IO — V
IN
VO=–5V
Ta=25˚C
–100
)
–10
V
(
IN
–1
Input voltage V
–0.1
VIN — I
O
VO=–0.2V
Ta=25˚C
)
pF
(
6
5
ob
4
3
2
1
Cob — V
CB
f=1MHz
I
=0
E
Ta=25˚C
Collector output capacitance C
–1.4–1.2–1.0–0.8–0.6
)
–0.01
–0.1
Output current IO (mA
–1 –10 –100
)
0
–1
–10 –100
Collector to base voltage VCB (V
)
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